µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME

ABSTRACT

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

This patent application is a continuation of U.S. application Ser. No.17/039,482 filed Sep. 30, 2020, which claims the priorities of GermanApplication Nos. DE 10 2019 112 124.8 of 9 May 2019, DE 10 2019 102509.5 of 31 Jan. 2019, DE 10 2019 115 479.0 of 7 Jun. 2019, DE 10 2019110 523.4 of 23 Apr. 2019, DE 10 2019 113 792.6 of 23 May 2019, and DE10 2019 110 497.1 of 23 Apr. 2019, Danish Application No. DK PA201970059of 29 Jan. 2019, U.S. Application No. 62/937,552 of 19 Nov. 2019, andPCT Application No. PCT/EP2020/052191 of 29 Jan. 2020. The disclosure ofeach of the foregoing applications is incorporated herein by referencein the entirety.

BACKGROUND

The ongoing current developments within the Internet of Things and thefield of communication have opened the door for various new applicationsand concepts. For development, service and manufacturing purposes, theseconcepts and applications offer increased effectiveness and efficiency.

One aspect of new concepts is based on augmented or virtual reality. Ageneral definition of “augmented reality” is given by an “interactiveexperience of the real environment, whereby the objects from it, whichare in the real world, are augmented by computer generated perceptibleinformation”.

The information is mostly transported by visualization, but is notlimited to visual perception. Sometimes haptic or other sensoryperceptions can be used to expand reality. In the case of visualization,the superimposed sensory-visual information can be constructive, i.e.additional to the natural environment, or it can be destructive, forexample by obscuring parts of the natural environment. In someapplications, it is also possible to interact with the superimposedsensory information in one way or another. In this way, augmentedreality reinforces the ongoing perception of the user of the realenvironment.

In contrast, “virtual reality” completely replaces the real environmentof the user with an environment that is completely simulated. In otherwords, while in an augmented reality environment the user is able toperceive the real world at least partially, in a virtual reality theenvironment is completely simulated and may differ significantly fromreality.

Augmented Reality can be used to improve natural environmentalsituations, enriching the user's experience or supporting the user inperforming certain tasks. For example, a user may use a display withaugmented reality features to assist him in performing certain tasks.Because information about a real object is superimposed to provide cluesto the user, the user is supported with additional information, allowingthe user to act more quickly, safely and effectively duringmanufacturing, repair or other services. In the medical field, augmentedreality can be used to guide and support the doctor in diagnosing andtreating the patient. In development, an engineer may experience theresults of his experiments directly and can therefore evaluate theresults more easily. In the tourism or event industry, augmented realitycan provide a user with additional information about sights, history,and the like. Augmented Reality can support the learning of activitiesor tasks.

SUMMARY

In the following summary different aspects for μ-displays in theautomotive and augmented reality applications are explained. Thisincludes devices, displays, controls, process engineering methods andother aspects suitable for augmented reality and automotiveapplications. This includes aspects which are directed to lightgeneration by means of displays, indicators or similar. In addition,control circuits, power supplies and aspects of light extraction, lightguidance and focusing as well as applications of such devices are listedand explained by means of various examples.

Because of the various limitations and challenges posed by the smallsize of the light-generating components, a combination of the variousaspects is not only advantageous, but often necessary. For ease ofreference, this disclosure is divided into several sections with similartopics. However, this should explicitly not be understood to mean thatfeatures from one topic cannot be combined with others. Rather, aspectsfrom different topics should be combined to create a display foraugmented reality or other applications or even in the automotivesector.

For considerations of the following solutions, some terms andexpressions should be explained in order to define a common and equalunderstanding. The terms listed are generally used with thisunderstanding in this document. In individual cases, however, there maybe deviations from the interpretation, whereby such deviation will bespecifically referred to.

“Active Matrix Display”

The term “active matrix display” was originally used for liquid crystaldisplays containing a matrix of thin film transistors that drive LCDpixels. Each individual pixel has a circuit with active components(usually transistors) and power supply connections. At present, however,this technology should not be limited to liquid crystals, but shouldalso be used in particular for driving μ-LEDs or μ-displays.

“Active Matrix Carrier Substrate”

“Active matrix carrier substrate” or “active matrix backplane” means adrive for light emitting diodes of a display with thin-film transistorcircuits. The circuits may be integrated into the backplane or mountedon it. The “active matrix carrier substrate” has one or more interfacecontacts, which form an electrical connection to a μ-LED displaystructure. An “active-matrix carrier substrate” can thus be part of anactive-matrix display or support it.

“Active Layer”

The active layer is referred to as the layer in an optoelectroniccomponent or light emitting diode in which charge carriers recombine. Inits simplest form, the active layer can be characterized by a region oftwo adjacent semiconductor layers of different conductivity type. Morecomplex active layers comprise quantum wells (see there), multi-quantumwells or other structures that have additional properties. Similarly,the structure and material systems can be used to adjust the band gap(see there) in the active layer, which determines the wavelength andthus the color of the light.

“Alvarez Lens Array”

With the use of Alvarez lens pairs, a beam path can be adapted to videoeyewear. An adjustment optic comprises an Alvarez lens arrangement, inparticular a rotatable version with a Moire lens arrangement. Here, thebeam deflection is determined by the first derivative of the respectivephase plate relief, which is approximated, for example, byz=ax2+by2+cx+dy+e for the transmission direction z and the transversedirections x and y, and by the offset of the two phase plates arrangedin pairs in the transverse directions x and y. For further designalternatives, swivelling prisms are provided in the adjustment optics.

“Augmented Reality (AR)”

This is an interactive experience of the real environment, where thesubject of the picking up is located in the real world and is enhancedby computer-generated perceptible information. Extended reality is thecomputer-aided extension of the perception of reality by means of thiscomputer-generated perceptible information. The information can addressall human sensory modalities. Often, however, augmented reality is onlyunderstood to be the visual representation of information, i.e. thesupplementation of images or videos with computer-generated additionalinformation or virtual objects by means of fade-in/overlay. Applicationsand explanations of the mode of operation of Augmented Reality can befound in the introduction and in the following in execution examples.

“Automotive.”

Automotive generally refers to the motor vehicle or automobile industry.This term should therefore cover this branch, but also all otherbranches of industry which include μ-displays or generally lightdisplays—with very high resolution and μ-LEDs.

“Bandgap”

Bandgap, also known as band gap or forbidden zone, is the energeticdistance between the valence band and conduction band of a solid-statebody. Its electrical and optical properties are largely determined bythe size of the band gap. The size of the band gap is usually specifiedin electron volts (eV). The band gap is thus also used to differentiatebetween metals, semiconductors and insulators. The band gap can beadapted, i.e. changed, by various measures such as spatial doping,deforming of the crystal lattice structure or by changing the materialsystems. Material systems with so-called direct band gap, i.e. where themaximum of the valence band and a minimum of the conduction band in thepulse space are superimposed, allow a recombination of electron-holepairs under emission of light.

“Bragg Grid”

Fibre Bragg gratings are special optical interference filters inscribedin optical fibres. Wavelengths that lie within the filter bandwidtharound AB are reflected. In the fiber core of an optical waveguide, aperiodic modulation of the refractive index is generated by means ofvarious methods. This creates areas with high and low refractive indexesthat reflect light of a certain wavelength (bandstop). The centerwavelength of the filter bandwidth in single-mode fibers results fromthe Bragg condition.

“Directionality”

Directionality is the term used to describe the radiation pattern of aμ-LED or other light-emitting device. A high directionality correspondsto a high directional radiation, or a small radiation cone. In general,the aim should be to obtain a high directional radiation so thatcrosstalk of light into adjacent pixels is avoided as far as possible.Accordingly, the light-emitting component has a different brightnessdepending on the viewing angle and thus differs from a Lambert emitter.

The directionality can be changed by mechanical measures or othermeasures, for example on the side intended for the emission. In additionto lenses and the like, this includes photonic crystals or pillarstructures (columnar structures) arranged on the emitting surface of apixelated array or on an arrangement of, in particular, μ-LEDs. Thesegenerate a virtual band gap that reduces or prevents the propagation ofa light vector along the emitting surface.

“Far Field”

The terms near field and far field describe spatial areas around acomponent emitting an electromagnetic wave, which differ in theircharacterization. Usually the space regions are divided into threeareas: reactive near field, transition field and far field. In the farfield, the electromagnetic wave propagates as a plane wave independentof the radiating element.

“Fly Screen Effect”

The Screen Door Effect (SDE) is a permanently visible image artefact indigital video projectors. The term fly screen effect describes theunwanted black space between the individual pixels or their projectedinformation, which is caused by technical reasons, and takes the form ofa fly screen. This distance is due to the construction, because betweenthe individual LCD segments run the conductor paths for control, wherelight is swallowed and therefore cannot hit the screen. If smalloptoelectronic lighting devices and especially μ-LEDs are used or if thedistance between individual light emitting diodes is too great, theresulting low packing density leads to possibly visible differencesbetween pointy illuminated and dark areas when viewing a single pixelarea. This so-called fly screen effect (screen door effect) isparticularly noticeable at a short viewing distance and thus especiallyin applications such as VR glasses. Sub-pixel structures are usuallyperceived and perceived as disturbing when the illumination differencewithin a pixel continues periodically across the matrix arrangement.Accordingly, the fly screen effect in automotive and augmented realityapplications should be avoided as far as possible.

“Flip Chip”

Flip-chip assembly is a process of assembly and connection technologyfor contacting unpackaged semiconductor chips by means of contact bumps,or short “bumps”. In flip-chip mounting, the chip is mounted directly,without any further connecting wires, with the active contacting sidedown—towards the substrate/circuit carrier—via the bumps. This resultsin particularly small package dimensions and short conductor lengths. Aflip-chip is thus in particular an electronic semiconductor componentcontacted on its rear side. The mounting may also require specialtransfer techniques, for example using an auxiliary carrier. Theradiation direction of a flip chip is then usually the side opposite thecontact surfaces.

“Flip-Flop”

A flip-flop, often called a bi-stable flip-flop or bi-stable flip-flopelement, is an electronic circuit that has two stable states of theoutput signal. The current state depends not only on the input signalspresent at the moment, but also on the state that existed prior to thetime under consideration. A dependence on time does not exist, but onlyon events. Due to the bi-stability, the flip-flop can store a dataquantity of a single bit for an unlimited time. In contrast to othertypes of storage, however, power supply must be permanently guaranteed.The flip-flop, as the basic component of sequential circuits, is anindispensable component of digital technology and thus a fundamentalcomponent of many electronic circuits, from quartz watches tomicroprocessors. In particular, as an elementary one-bit memory, it isthe basic element of static memory components for computers. Somedesigns can use different types of flip-flops or other buffer circuitsto store state information. Their respective input and output signalsare digital, i.e. they alternate between logical “false” and logical“true”. These values are also known as “low” 0 and “high” 1.

“Head-Up Display”

The head-up display is a display system or projection device that allowsusers to maintain their head position or viewing direction by projectinginformation into their field of vision.

The Head-up Display is an augmented reality system. In some cases, aHead-Up Display has a sensor to determine the direction of vision ororientation in space.

“Horizontal Light Emitting Diode”

With horizontal LEDs, the electrical connections are on a common side ofthe LED. This is often the back of the LED facing away from the lightemission surface. Horizontal LEDs therefore have contacts that are onlyformed on one surface side.

“Interference Filter”

Interference filters are optical components that use the effect ofinterference to filter light according to frequency, i.e. color forvisible light.

“Collimation”

In optics, collimation refers to the parallel direction of divergentlight beams. The corresponding lens is called collimator or convergentlens. A collimated light beam contains a large proportion of parallelrays and is therefore minimally spread when it spreads. A use in thissense refers to the spreading of light emitted by a source. A collimatedbeam emitted from a surface has a strong dependence on the angle ofradiation. In other words, the radiance (power per unit of a fixed angleper unit of projected source area) of a collimated light source changeswith increasing angle. Light can be collimated by a number of methods,for example by using a special lens placed in front of the light source.Consequently, collimated light can also be considered as light with avery high directional dependence.

“Converter Material”

Converter material is a material, which is suitable for converting lightof a first wavelength into a second wavelength. The first wavelength isshorter than the second wavelength. This includes various stableinorganic as well as organic dyes and quantum dots. The convertermaterial can be applied and structured in various processes.

“Lambert Lamps”

For many applications, a so-called Lambertian radiation pattern isrequired. This means that a light-emitting surface ideally has a uniformradiation density over its area, resulting in a vertically circulardistribution of radiant intensity. Since the human eye only evaluatesthe luminance (luminance is the photometric equivalent of radiance),such a Lambertian material appears to be equally bright regardless ofthe direction of observation. Especially for curved and flexible displaysurfaces, this uniform, angle-independent brightness can be an importantquality factor that is sometimes difficult to achieve with currentlyavailable displays due to their design and LED technology.

LEDs and μ-LEDs resemble a Lambert spotlight and emit light in a largespatial angle. Depending on the application, further measures are takento improve the radiation characteristics or to achieve greaterdirectionality (see there).

“Conductivity Type”

The term “conductivity type” refers to the majority of (n- or p-) chargecarriers in a given semiconductor material. In other words, asemiconductor material that is n-doped is considered to be of n-typeconductivity. Accordingly, if a semiconductor material is n-type, thenit is n-doped. The term “active” region in a semiconductor refers to aborder region in a semiconductor between an n-doped layer and a p-dopedlayer. In this region, a radiative recombination of p- and n-type chargecarriers takes place. In some designs, the active region is stillstructured and includes, for example, quantum well or quantum dotstructures.

“Light Field Display”

Virtual retinal display (VNA) or light field display is referred to adisplay technology that draws a raster image directly onto the retina ofthe eye. The user gets the impression of a screen floating in front ofhim. A light field display can be provided in the form of glasses,whereby a raster image is projected directly onto the retina of a user'seye. In the virtual retina display, a direct retinal projection createsan image within the user's eye. The light field display is an augmentedreality system.

“Lithography” or “Photolithography”

Photolithography is one of the central methods of semiconductor andmicrosystem technology for the production of integrated circuits andother products. The image of a photomask is transferred onto aphotosensitive photoresist by means of exposure. Afterwards, the exposedareas of the photoresist are dissolved (alternatively, the unexposedareas can be dissolved if the photoresist is cured under light). Thiscreates a lithographic mask that allows further processing by chemicaland physical processes, such as applying material to the open areas oretching depressions in the open areas. Later, the remaining photoresistcan also be removed.

“μ-LED”

A μ-LED is an optoelectronic component whose edge lengths are less than70 μm, especially down to less than 20 μm, especially in the range of 1μm to 10 μm. Another range is between 10 to 30 μm. This results in anarea of a few hundred μm² down to several tens of μm². For example, aμ-LED can comprise an area of about 60 μm² with an edge length of about8 μm. In some cases, a μ-LED has an edge length of 5 μm or less,resulting in a size of less than 30 μm². Typical heights of such μ-LEDsare, for example, in the range of 1.5 μm to 10 μm.

In addition to classic lighting applications, displays are the mainapplications for μ-LEDs. The μ-LEDs form pixels or subpixels and emitlight of a defined color. Due to their small pixel size and high densitywith a small pitch, μ-LEDs are suitable for small monolithic displaysfor AR applications, among other things.

Due to the above-mentioned very small size of a μ-LED, the productionand processing is significantly more difficult compared to previouslarger LEDs. The same applies to additional elements such as contacts,package, lenses etc. Some aspects that can be realized with largeroptoelectronic components cannot be produced with μ-LEDs or only in adifferent way. In this respect, a μ-LED is therefore significantlydifferent from a conventional LED, i.e. a light emitting device with anedge length of 200 μm or more.

“μ-LED Array”

See at μ-Display

“μ-Display”

A μ-display or μ-LED array is a matrix with a plurality of pixelsarranged in defined rows and columns. With regard to its functionality,a μ-LED array often forms a matrix of μ-LEDs of the same type and color.Therefore, it rather provides a lighting surface. The purpose of aμ-display, on the other hand, is to transmit information, which oftenresults in the demand for different colors or an addressable control foreach individual pixel or subpixel. A μ-display can be made up of severalμ-LED arrays, which are arranged together on a backplane or othercarrier. Likewise, a μ-LED array can also form a μ-Display.

The size of each pixel is in the order of a few μm, similar to μ-LEDs.Consequently, the overall dimension of a p display with 1920*1080 pixelswith a μ-LED size of 5 μm per pixel and directly adjacent pixels is inthe order of a few 10 mm². In other words, a μ-display or μ-LED array isa small-sized arrangement, which is realized by means of μ-LEDs.

μ-displays or μ-LED arrays can be formed from the same, i.e. from onework piece. The μ-LEDs of the μ-LED array can be monolithic. Suchμ-displays or μ-LED arrays are called monolithic μ-LED arrays orμ-displays.

Alternatively, both assemblies can be formed by growing μ-LEDsindividually on a substrate and then arranging them individually or ingroups on a carrier at a desired distance from each other using aso-called Pick & Place process. Such μ-displays or μ-LED arrays arecalled non-monolithic. For non-monolithic μ-displays or μ-LED arrays,other distances between individual μ-LEDs are also possible. Thesedistances can be chosen flexibly depending on the application anddesign. Thus, such μ-displays or μ-LED arrays can also be calledpitch-expanded. In the case of pitch-expanded μ-displays or μ-LEDarrays, this means that the μ-LEDs are arranged at a greater distancethan on the growth substrate when transferred to a carrier. In anon-monolithic μ-display or μ-LED array, each individual pixel cancomprise a blue light-emitting μ-LED and a green light-emitting μ-LED aswell as a red light-emitting μ-LED.

To take advantage of different advantages of monolithic μ-LED arrays andnon-monolithic μ-LED arrays in a single module, monolithic μ-LED arrayscan be combined with non-monolithic μ-LED arrays in a μ-display. Thus,μ-displays can be used to realize different functions or applications.Such a display is called a hybrid display.

“μ-LED Nano Column”

A μ-LED nano column is generally a stack of semiconductor layers with anactive layer, thus forming a μ-LED. The μ-LED nano column has an edgelength smaller than the height of the column. For example, the edgelength of a μ-LED nanopillar is approximately nm to 300 nm, while theheight of the device can be in the range of 200 nm to 1 μm or more.

“μ-Rod”

μ-rod or Rod designates in particular a geometric structure, inparticular a rod or bar or generally a longitudinally extending, forexample cylindrical, structure. μ-rods are produced with spatialdimensions in the μm to nanometer range. Thus, nanorods are alsoincluded here.

“Nanorods”

In nanotechnology, nanorods are a design of nanoscale objects. Each oftheir dimensions is in the range of about 10 nm to 500 nm. They may besynthesized from metal or semiconducting materials. Aspect ratios(length divided by width) are 3 to 5. Nanorods are produced by directchemical synthesis. A combination of ligands acts as a shape controlagent and attaches to different facets of the nanorod with differentstrengths. This allows different shapes of the nanorod with differentgrowth rates to produce an elongated object. μLED nanopillars are suchnano rods.

“Miniature LED”

Their dimensions range from 100 μm to 750 μm, especially in the rangelarger than 150 μm.

“Moiré Effect” and “Moiré Lens Arrangement”

The moiré effect refers to an apparent coarse raster that is created byoverlaying regular, finer rasters. The resulting pattern, whoseappearance is similar to patterns resulting from interference, is aspecial case of the aliasing effect by subsampling. In the field ofsignal analysis, aliasing effects are errors that occur when the signalto be sampled contains frequency components that are higher than halfthe sampling frequency. In image processing and computer graphics,aliasing effects occur when images are scanned and result in patternsthat are not included in the original image. A moiré lens array is aspecial case of an Alvarez lens array.

“Monolithic Construction Element”

A monolithic construction element is a construction element made of onepiece. A typical such device is for example a monolithic pixel array,where the array is made of one piece and the μ-LEDs of the array aremanufactured together on one carrier.

“Optical Mode”

A mode is the description of certain temporally stationary properties ofa wave. The wave is described as the sum of different modes. The modesdiffer in the spatial distribution of the intensity. The shape of themodes is determined by the boundary conditions under which the wavepropagates. The analysis according to vibration modes can be applied toboth standing and continuous waves. For electromagnetic waves, such aslight, laser and radio waves, the following types of modes aredistinguished: TEM or transverse electromagnetic mode, TE or H modes, TMor E modes. TEM or transverse electromagnetic mode: Both the electricand the magnetic field components are always perpendicular to thedirection of propagation. This mode is only propagation-capable ifeither two conductors (equipotential surfaces) insulated from each otherare available, for example in a coaxial cable, or no electricalconductor is available, for example in gas lasers or optical fibers. TEor H modes: Only the electric field component is perpendicular to thedirection of propagation, while the magnetic field component is in thedirection of propagation. TM or E modes: Only the magnetic fieldcomponent is perpendicular to the propagation direction, while theelectric field component points in the propagation direction.

“Optoelectronic Device”

An optoelectronic component is a semiconductor body that generates lightby recombination of charge carriers during operation and emits it. Thelight generated can range from the infrared to the ultraviolet range,with the wavelength depending on various parameters, including thematerial system used and doping. An optoelectronic component is alsocalled a light emitting diode.

For the purpose of this disclosure, the term optoelectronic device oralso light-emitting device is used synonymously. A μ-LED (see there) isthus a special optoelectronic device with regard to its geometry. Indisplays, optoelectronic components are usually monolithic or asindividual components placed on a matrix.

“Passive Matrix Backplane” or “Passive Matrix Carrier Substrate”

A passive matrix display is a matrix display, in which the individualpixels are driven passively (without additional electronic components inthe individual pixels). A light emitting diode of a display can becontrolled by means of IC circuits. In contrast, displays with activepixels driven by transistors are referred to as active matrix displays.A passive matrix carrier substrate is part of a passive matrix displayand carries it.

“Photonic Crystal” or “Photonic Structure”

A photonic structure can be a photonic crystal, a quasi-periodic ordeterministically aperiodic photonic structure. The photonic structuregenerates a band structure for photons by a periodic variation of theoptical refractive index. This band structure can comprise a band gap ina certain frequency range. As a result, photons cannot propagate throughthe photonic structure in all spatial directions. In particular,propagation parallel to a surface is often blocked, but perpendicular toit is possible. In this way, the photonic structure or the photoniccrystal determines a propagation in a certain direction. It blocks orreduces this in one direction and thus generates a beam or a bundle ofrays of radiation directed as required into the room or radiation areaprovided for this purpose.

Photonic crystals are photonic structures occurring or created intransparent solids. Photonic crystals are not necessarilycrystalline—their name derives from analogous diffraction and reflectioneffects of X-rays in crystals due to their lattice constants. Thestructure dimensions are equal to or greater than a quarter of thecorresponding wavelength of the photons, i.e. they are in the range offractions of a μm to several μm. They are produced by classicallithography or also by self-organizing processes.

Similar or the same property of a photonic crystal can alternatively beproduced with non-periodic but nevertheless ordered structures. Suchstructures are especially quasiperiodic structures or deterministicallyaperiodic structures. These can be for example spiral photonicarrangements.

In particular, so-called two-dimensional photonic crystals are mentionedhere as examples, which exhibit a periodic variation of the opticalrefractive index in two mutually perpendicular spatial directions,especially in two spatial directions parallel to the light-emittingsurface and perpendicular to each other.

However, there are also one-dimensional photonic structures, especiallyone-dimensional photonic crystals. A one-dimensional photonic crystalexhibits a periodic variation of the refractive index along onedirection. This direction can be parallel to the light exit plane. Dueto the one-dimensional structure, a beam can be formed in a firstspatial direction. Thereby a photonic effect can be achieved alreadywith a few periods in the photonic structure. For example, the photonicstructure can be designed in such a way that the electromagneticradiation is at least approximately collimated with respect to the firstspatial direction. Thus, a collimated beam can be generated at leastwith respect to the first direction in space.

“Pixel”

Pixel, pixel, image cell or picture element refers to the individualcolor values of a digital raster graphic as well as the area elementsrequired to capture or display a color value in an image sensor orscreen with raster control. A pixel is thus an addressable element in adisplay device and comprises at least one light-emitting device. A pixelhas a certain size and adjacent pixels are separated by a defineddistance or pixel space. In displays, especially μ-displays, often three(or in case of additional redundancy several) subpixels of differentcolor are combined to one pixel.

“Planar Array”

A planar array is an essentially flat surface. It is often smooth andwithout protruding structures. Roughness of the surface is usually notdesired and does not have the desired functionality. A planar array isfor example a monolithic, planar array with several optoelectroniccomponents.

“Pulse Width Modulation”

Pulse width modulation or PWM is a type of modulation for driving acomponent, in particular a μ-LED. Here the PWM signal controls a switchthat is configured to switch a current through the respective μ-LED onand off so that the μ-LED either emits light or does not emit light.With the PWM, the output provides a square wave signal with a fixedfrequency f. The relative quantity of the switch-on time compared to theswitch-off time during each period T (=1/f) determines the brightness ofthe light emitted by the μ-LED. The longer the switch-on time, thebrighter the light.

“Quantum Well”

A quantum well or quantum well refers to a potential in a band structurein one or more semiconductor materials that restricts the freedom ofmovement of a particle in a spatial dimension (usually in thez-direction). As a result, only one planar region (x, y plane) can beoccupied by charge carriers. The width of the quantum well significantlydetermines the quantum mechanical states that the particles can assumeand leads to the formation of energy levels (sub-bands), i.e. theparticle can only assume discrete (potential) energy values.

“Recombination”

In general, a distinction is made between radiative and non-radiativerecombination. In the latter case, a photon is generated which can leavea component. A non-radiative recombination leads to the generation ofphonons, which heat a component. The ratio of radiative to non-radiativerecombination is a relevant parameter and depends, among other things,on the size of the component. In general, the smaller the component, thesmaller the ratio and non-radiative recombination increases in relationto radiative recombination.

“Refresh Time”

Refresh time is the time after which a cell of a display or similar mustbe rewritten so that it either does not lose the information or therefresh is predetermined by external circumstances.

“Die” or “Light-Emitting Body”

A light-emitting body or also a die is a semiconductor structure whichis separated from a wafer after production on a wafer and which issuitable for generating light after an electrical contact duringoperation. In this context, a die is a semiconductor structure, whichcontains an active layer for light generation. The die is usuallyseparated after contacting, but can also be processed further in theform of arrays.

“Slot Antenna”

A slot antenna is a special type of antenna in which instead ofsurrounding a metallic structure in space with air (as a nonconductor),an interruption of a metallic structure (e.g. a metal plate, awaveguide, etc.) is provided. This interruption causes an emission of anelectromagnetic wave whose wavelength depends on the geometry of theinterruption. The interruption often follows the principle of thedipole, but can theoretically have any other geometry. A slot antennathus comprises a metallic structure with a cavity resonator having alength of the order of magnitude of wavelengths of visible light. Themetallic structure can be located in or surrounded by an insulatingmaterial. Usually, the metallic structure is earthed to set a certainpotential.

“Field of Vision”

Field of view (FOV) refers to the area in the field of view of anoptical device, a sun sensor, the image area of a camera (film orpicking up sensor) or a transparent display within which events orchanges can be perceived and recorded. In particular, a field of view isan area that can be seen by a human being without movement of the eyes.With reference to augmented reality and an apparent object placed infront of the eye, the field of view comprises the area indicated as anumber of degrees of the angle of vision during stable fixation of theeye.

“Subpixels”

A subpixel (approximately “subpixel”) describes the inner structure of apixel. In general, the term subpixel is associated with a higherresolution than can be expected from a single pixel. A pixel can alsoconsist of several smaller subpixels, each of which radiates a singlecolor. The overall color impression of a pixel is created by mixing theindividual subpixels. A subpixel is thus the smallest addressable unitin a display device. A subpixel also comprises a certain size that issmaller than the size of the pixel to which the subpixel is assigned.

“Vertical Light Emitting Diode”

In contrast to the horizontal LED, a vertical LED comprises oneelectrical connection on the front and one on the back of the LED. Oneof the two sides also forms the light emission surface. Vertical LEDsthus comprise contacts that are formed towards two opposite main surfacesides. Accordingly, it is necessary to deposit an electricallyconductive but transparent material so that on the one hand, electricalcontact is ensured and on the other hand, light can pass through.

“Virtual Reality”

Virtual reality, or VR for short, is the representation and simultaneousperception of reality and its physical properties in a real-timecomputer-generated, interactive virtual environment. A virtual realitycan completely replace the real environment of an operator with a fullysimulated environment.

Several aspects disclosed herein relate to the control of light emittingelements in a μ-LED display. The limited space available among thecurrent matrix element pixels requires further consideration of how toaddress and control the individual pixels. Conventional approaches andtechniques may not be usable due to the limited space. This may alsoapply to concepts where the current is controlled by each pixel. Sincethe required space for a μ-LED as subpixel is much smaller than fornormal pixels, newer concepts are necessary.

In addition, driver circuits should be capable of providing the currentframe rates of 60 Hz to 240 Hz. In this context it is also necessary orat least expedient to achieve a wide dynamic brightness range(1:100,000) or 100 dB per individual pixel. This range is necessary toachieve sufficient contrast and brightness of the image even underdifferent external light influences in automotive or augmented realityapplications.

Due to the already mentioned size of the individual μ-LEDs in bothpixelated displays and monolithic arrays, a digitally generated pulsewidth modulation, PWM, seems to be appropriate. Accordingly, thetechnology should be scalable in terms of both pixel array size and CMOStechnology process nodes. A digitally generated PWM also allowscalibration for non-uniformity of both pixel array and pixel current.

A digital nonlinear PWM can process digital codes so that the pulsewidth can be generated by a nonlinear transfer function of the codes topulse width. In the following different concepts are presented, whichare suitable for implementation in monolithic displays or pixelatedarrays with μ-LEDs due to their special size or scalability.

Typically, in a pulse width modulation (PWM) implementation, a standardpixel cell circuit is very quickly switched alternately to “off” and“rated current”. For this purpose, a so-called 2T1C circuit is used inconventional circuits. However, especially in displays with a highnumber of lines and columns, the programming frequency is very high inorder to achieve a sufficient “refresh rate” of the display. In thepast, this problem was solved by a second transistor, which, however,consumes additional space. Especially with the μ-displays shown here, oreven the space “under” the μ-LEDs, the space may no longer besufficient. In addition, depending on the wiring (i.e. position of theμ-LED within the current path), a higher inaccuracy and thus intensityfluctuations can occur. Accordingly, a current driver for μ-LEDs withbackgate, which reduces these problems.

According to an aspect described here, a device for electronic controland power supply of a μ-LED is proposed, which has a data signal line, athreshold line and a selection signal line. Furthermore, a μ-LED isproposed, which is electrically connected in series to a dual-gatetransistor and together with it between a first and second potentialconnection. A first control gate of the dual-gate transistor isconnected to the threshold line. The device also comprises a select-holdcircuit with a charge accumulator connected to a second control gate ofthe dual-gate transistor and to a current conduction contact of thedual-gate transistor, and with a control transistor whose controlterminal is connected to the selection signal line.

Instead of an additional transistor for pulse width modulation (PWM),the additional control gate of a dual-gate transistor can now bemodulated with a PWM signal as an existing driver transistor. In someaspects, the dual-gate transistor also acts as a current drivertransistor.

According to a second aspect, a device is also proposed, where a μ-LEDand a dual-gate transistor are arranged in series in a current path. Ananalogeue data drive signal is applied to one side of the dual-gatetransistor via a selection hold circuit to control the color of theμ-LED by means of the selection signal. A pulse width modulation signalcoupled to the other side of the dual-gate transistor controls thebrightness of the μ-LED.

Advantageously, a backgate transistor is used as a dual-gate transistor.

The modulation of the backgate of the driver transistor can also be usedas an actuator for the current control loop in order to feed back afeedback signal, for example the forward voltage of the LED, thusachieving a current feedback to a LED temperature drift. By modulatingthe voltage at the backgate of the driver transistor, a light emittingdiode current can be easily and, above all, space-savingly pulse-widthmodulated, especially in the TFT (Thin Film Transistor) pixel cell. WithRGB cells, this results in a saving of three power transistors.

A weak modulation of the voltage at the backgate can be used to make thecurrent in the μ-LED substantially independent of the μ-LED temperature.This is especially useful when using an NMOS cell with the μ-LED on thelow side of the driver transistor, because of the common cathode. Suchcells have intrinsically poor current accuracy, so that the idea of thepresent invention can be used to improve such cells significantly.

On the one hand, this allows pulse width modulation via the backgate ofthe main transistor instead of via an additional transistor, in additionto the main transistor. On the other hand, the use of a backgatetransistor in displays allows temperature stabilization by “notdigitally” operating the backgate with pulse width modulation, but withan analogeue voltage. This is derived from the forward voltage Vf of theLED, which is used as a feedback loop of a control system. Suchtemperature stabilization improves the color accuracy and stability ofthe μ-LED.

In some aspects, the dual-gate transistor may include a backgatetransistor where the backgate is the first control gate. This is acompact design. The dual-gate transistor can be designed as a thin-filmtransistor with two opposite control gates. This allows a reliable andcompact manufacturing. The first control gate of the dual-gatetransistor can be configured to set a threshold voltage. In this way, amodulation can be carried out. Alternatively, a switching signal (PWMsignal) can be applied to the first control gate during operation. Thisallows a simple brightness control to be carried out.

In further aspects, the μ-LED can be connected with its first terminalto the first potential connection, the dual-gate transistor can bearranged with its current line contacts between a second terminal of theμ-LED and the second potential connection. The selector hold circuit mayhave the charge storage connected to the second control gate of thedual-gate transistor and to the second terminal of the μ-LED. Thisversion can be easily manufactured in NMOS technology.

In further aspects, the μ-LED can be connected with its first connectionto a second current line contact of the dual-gate transistor and withits second connection to the second potential connection. The Dual-GateTransistor is connected with its current conducting contacts between afirst terminal of the μ-LED and the first potential connection. Thecharge memory of the selector holding circuit is connected to the secondcontrol gate of the dual-gate transistor and to the first potentialconnection. Thus, the forward voltage of the LED does not affect agate-source voltage of the dual-gate transistor.

Another aspect deals with the realization in p-MOS technology. There theμ-LED is connected with its first terminal to the first potentialterminal and the dual-gate transistor with its current line contacts isconnected between a second terminal of the μ-LED and the secondpotential terminal. The selector hold circuit can be connected with thecharge storage to the second control gate of the dual-gate transistor aswell as to the second potential connection.

In a further aspect, the selection hold circuit comprises a furthercontrol transistor, which is connected in parallel to the μ-LED andwhose control terminal can be connected to the selection signal line.

According to a further configuration, the charge accumulator can beconnected to the second control gate of the dual-gate transistor as wellas to the first potential terminal, and further comprises a temperaturecompensation circuit with a negative feedback based on the detection ofa forward voltage by the μ-LED, whereby the temperature compensationcircuit can form the threshold line on the output side. This allowsadditional weak modulation to be impressed on the backgate transistor.

In some aspects, the temperature compensation circuit may include acontrol path, which may be in parallel with the dual-gate transistor,and may have two paths connected in series. This is a simple design. Inanother embodiment, from a node between the two controlled pathsprovided by a third control transistor and a fourth control transistor,the threshold line may be connected to the first control gate of thedual-gate transistor. By means of the node the back gate can beeffectively controlled. According to a further embodiment, the controlterminal of the fourth control transistor can be connected to the secondpotential terminal. In this way, the gate of the transistor is setstable to the high potential of the second potential connection.

Another aspect is that the temperature compensation circuit may includea second charge storage device, which may be connected to a controlterminal of a control transistor providing one of the two paths and tothe first potential terminal. This allows the gate voltage of the thirdtransistor to be buffered.

A second data signal line is coupled to the second charge storage andthe third control transistor. A signal on this line is used to program anegative feedback factor. The second data signal line can also be usedfor fine adjustment of the temperature compensation. Depending on theapplication, this fine adjustment can be switched on or off by means ofa further control transistor

According to another advantageous embodiment, in the temperaturecompensation circuit the control terminal of the third controltransistor can be connected to the second potential terminal. In thisway, the gate voltage of the third control transistor is advantageouslyfixed in a clear and stable manner.

In accordance with another advantageous embodiment, a fifth controltransistor can be connected in parallel to the μ-LED. A switching signal(PWM signal) is applied to its control terminal during operation. Inthis way, the LED can be switched on and off directly and without chargestorage, in particular by means of pulse width modulation. The dual-gatetransistor can then operate as a temperature-stabilized current source.

Also a control for a brightness adjustment or a dimming of pixels ofimportance. Such dimming is not only required in the automotive sector,for example to switch between day and night vision, but also in ARapplications. Basically, such dimming can be useful and advantageouswhen contrasts have to be adjusted or when external light makes itnecessary to control the brightness of a display in order to avoiddazzling a user or to show information reliably.

For the reasons mentioned above, different technical solutions are knownfor the control of lighting units with LEDs, in particular to operatedisplays at different brightness levels. For example, control circuitsfor controlling matrix displays are known, with which the individualpixels of the rows formed by several rows and columns are specificallycontrolled. Likewise, control circuits are known with which the LEDcurrent can be reduced or dimmed. This so-called current dimming isused, for example, in displays with liquid crystal displays or OLEDs.Due to the limited space available, solutions with a large number ofcomponents are difficult to implement. This can sometimes make thecircuits very complex. Based on this, the following aspects shouldfurther develop the control of a lighting unit with LEDs to vary thebrightness in such a way that a comparatively simple, accurate andreliable variation of the brightness of the light emitted by the LEDs isachieved. In particular, the above-mentioned dimming and operation indifferent brightness and contrast levels should be made possible.

Thus, a control circuit for changing the brightness of a lighting unitis proposed, which has a voltage source for supplying the lighting unitwith electrical energy and at least one energy storage device. Thelatter sets a current for the illuminants of the lighting unit.Furthermore, a control element is provided which temporarily changes avoltage of a voltage signal generated by the voltage source, on thebasis of which a LED current flowing through the at least one LED can beadjusted. According to the proposed principle, the control circuit hasbeen developed further in such a way that the control element is set upto operate the lighting unit at at least two different brightness levelsby transmitting a first and a second voltage signal having differentvoltages to the lighting unit during a period, i.e. in a repeating timeperiod, and the brightness level can be adjusted as a function of thevoltage of the first voltage signal.

Essential for this concept is therefore that a pulsed voltage signal isapplied to the lighting unit, whereby a current flows through the atleast one μ-LED of the lighting unit as a function of the voltagesignal, which causes the LED to light up. During a period, a firstvoltage signal, in particular a switch-on voltage signal, and a secondvoltage signal, in particular a switch-off voltage signal, areadvantageously provided, wherein the at least one LED provided in thelighting unit is supplied with a current proportional to the voltageduring the application of the first voltage signal or a currentproportional to the voltage flows through it. It is basically irrelevanthere whether the lighting unit has one or a plurality of LEDs. Oneaspect of the switching element has a transistor, via which the at leastone LED of the lighting unit is supplied with electrical energydepending on the respective voltage signal and an LED current flowsthrough it so that it preferably emits visible light.

According to the proposed concept, the lighting unit is controlled insuch a way that within a period, firstly a first voltage signal istransmitted to the lighting unit in a first phase of the period andsubsequently a second voltage signal is transmitted to the lighting unitin a second phase of the period, whereby a current flow through the atleast one LED of the lighting unit is effected depending on the voltageof the respective voltage signal. It is important here that the voltageor the voltage value of the second voltage signal is significantly lowerthan the voltage of the first voltage signal. Preferably, the voltage ofthe second voltage signal is at least nearly zero.

In the first phase of the period, in which the first voltage signal istransmitted to the lighting unit, the energy storage of the lightingunit is charged. At the same time, a current proportional to the voltageof the voltage signal flows through the LED, which emits visible light.While in the second phase of the period the second voltage signal istransmitted to the lighting unit, the potential in the energy storage,preferably a capacitor, is maintained so that until the beginning of thefollowing period a current caused by this flows through the LED, whichthus continues to emit light. Although the intensity of the currentflowing through the LED during the first phase of the period shouldtheoretically be equal to the intensity of the current flowing throughthe LED during the second phase of the period, this is not the case inpractice. This is due to the fact that the control circuit usually has asecond capacitance in addition to the capacitance of the energy storagedevice, in particular a capacitor, thus creating a capacitive voltagedivider so that the voltage at the energy storage device is lower duringthe second phase of the period compared to the voltage during the firstphase of the period. Such a second capacitance is provided, for example,by the capacitance of the transistor, in particular the so-calledgate-source capacitance.

In this context, it is significant that the intensity of the currentflowing through the LED during the first phase of the period in whichthe first voltage signal is transmitted to the lighting unit isdifferent from the intensity of the current flowing through the LEDduring the second phase of the period in which the second voltage signalis transmitted to the lighting unit, namely smaller. However, anobserver will not recognize this difference, which leads to a differencein the maximum brightness of the LED during a period, but will onlyperceive the light output averaged over the period.

In order to use this effect in a suitable way for the control oflighting units used in displays, for example, it is advantageous if thefirst and second voltage signals are repeated at a frequency of 60 Hz,which corresponds to the usual refresh rate of displays. This means thatwithin one second, a first and a second voltage signal are transmittedto the lighting unit sixty times each, whereby a LED current flowsthrough at least one LED of the lighting unit depending on the voltageof the respective voltage signal.

In further aspects, it is planned that the μ-LED, while the secondvoltage signal is transmitted to the lighting unit, is supplied with theelectrical energy required to excite light emission from an energystorage device designed as a capacitor. Since the voltage of thecapacitor is lower than that of the first phase of the period, the LEDis passed through by a current of lower intensity in this operatingstate compared to the first phase of the period, so that the μ-LEDshines less brightly.

Furthermore, it is conceivable in this way that the control element isset up to generate the first voltage signal with a duty cycle of 0.0025to 0.003, the duty cycle corresponding to the ratio of the duration ofthe first voltage signal to the duration of the period. The duty cyclethus indicates the ratio of the duration of the first voltage signal tothe duration of the period. At a repetition frequency for the first andsecond voltage signals of 60 Hz, this means that the control element isarranged according to this embodiment of the invention such that aperiod within which the first and second voltage signals are transmittedto the lighting unit is 0.0166 s or 16.6 ms long. In a preferredembodiment, the first voltage signal is transmitted to the lighting unitfor a period not exceeding 0.050 ms, which corresponds to a duty cycleof about 0.003 or 1:333. In this case, the second voltage signal istransmitted to the lighting unit for a period of 16.6 ms. The duty cyclein relation to this signal is therefore approximately 1.

Since the brightness of an LED perceived by an observer depends on theaverage brightness or light output emitted during a period, a currentflow in the LED during the second phase of a period and thus theproportion of light emitted by the at least one LED in the second,comparatively long phase of the period has a considerable,disproportionately strong influence on the average light output of anLED of the lighting unit.

In some aspects it is conceivable that the control circuit is arrangedto operate the lighting unit at a first, darker brightness level bysetting the voltage of the first voltage signal to a voltage valuewithin a first voltage interval and to operate the lighting unit at atleast a second, brighter brightness level by setting the voltage of thefirst voltage signal to a voltage value within at least a second voltageinterval whose voltages are higher than those of the first voltageinterval. In accordance with this embodiment, two voltage intervals orvoltage ranges are thus provided for the control of a lighting unit,which each have different voltages with which the first voltage signalis generated and which are at different voltage levels. Depending on thevoltage level of the first voltage signal, the lighting unit is thusoperated either at a first, darker brightness level or at a second,brighter brightness level. If the lighting unit is to be operated at thebrighter brightness level, the lighting unit is controlled on the basisof a first voltage signal whose voltage lies in the second voltageinterval and thus in the voltage interval which has the higher value.

In another aspect, the control element is set up to operate the lightingunit at the same brightness level by selectively varying the voltage ofthe first voltage signal within one of at least two defined voltageintervals. This means that in a beneficial manner the first voltagesignal, in particular its voltage, is only varied between two successiveperiods to such an extent that the corresponding voltage is still withinthe same voltage interval and it is ensured that the lighting unit isstill operated at the same brightness level despite a slight change inbrightness. It is thus possible to dim the lighting unit, in particularthe at least one LED provided within the lighting unit, to at least twodifferent brightness levels, i.e. to provide an at least largelystepless range at least at two different brightness levels in each case,in which the brightness of the at least one LED of a lighting unit isdeliberately changed.

According to a further embodiment, it is intended that the first voltageinterval or the first voltage range should have voltage values at leastin the range of 1.3 V to 3.0 V. Furthermore, it is preferably providedthat the second voltage interval or the second voltage range has voltagevalues at least in the range from 4.0 V to 10.0 V. In this way, tworanges are realized at different brightness levels, within which thebrightness of the lighting unit can again be specifically andcontinuously changed or dimmed.

With regard to the embodiment described above, the idea can again beconsidered that—as soon as a comparatively small first voltage signal isapplied to the lighting unit—the total current flowing through the LEDduring a period is significantly determined by the current flowingthrough the LED during the first phase of the period in which the firstvoltage signal is applied to the lighting unit. In this case, thelighting unit is operated at a comparatively low brightness and theemission of light due to a current flow through the LED caused by thesecond voltage signal applied to the lighting unit during the secondphase of the period can be neglected in this operating state.

If, on the other hand, a first voltage signal with a comparatively highvoltage is transmitted to the lighting unit, the total current flowingthrough the LED during a period is determined to a large extent by thecurrent flowing through the LED during the second phase, i.e. while thesecond voltage signal is applied to the lighting unit. In this case, thelighting unit is operated at a high brightness level and can be dimmedin this range by selective variation of the first voltage signal. Thepresented control circuit can be used in a display or monitor for imagegeneration. These can be part of a larger screen or display device, forexample in a motor vehicle. Also a realization in AR or VR glasses orany other device is conceivable. Again, it is essential that a controlcircuit is used which allows a display or monitor to be operated at atleast two different brightness levels.

In addition to a specially designed control circuit, some aspects alsorelate to a method for selectively changing the brightness of a lightingunit, in which a voltage source supplies the lighting unit withelectrical energy and at least one LED as the illuminant of the lightingunit is supplied with electrical energy at least temporarily from anenergy storage device of the lighting unit. Furthermore, in this methoda voltage signal is transmitted to the lighting unit at leastintermittently and the current flowing through the at least one LED isadjusted on the basis of the voltage signal.

The method is characterized in that the lighting unit is operated at atleast two different brightness levels by transmitting a first and asecond voltage signal having different voltages to the lighting unitduring one period and adjusting the brightness level depending on thevoltage of the first voltage signal. It is again substantial to theinvention that the brightness of an LED, which is decisively determinedby the total current flowing through at least one LED during a period,can be selectively changed by transmitting a first voltage signal whichis transmitted to the lighting unit in a first phase of the period. Todrive the lighting unit, a first voltage signal is applied to thelighting unit in a first phase of the period, so that initially, whilethe first voltage signal is applied to the lighting unit, the energystorage device of the lighting unit is charged and a currentproportional to the voltage of the voltage signal flows through the atleast one LED of the lighting unit. In a second phase of the period, asecond voltage signal is transmitted to the lighting unit with avoltage, which is significantly lower than the voltage of the firstvoltage signal, preferably close to zero. This initially lowers thepotential of the energy storage device, in particular a capacitor, whichalso reduces the strength of the current flowing through the LEDaccordingly.

Compared to the first phase of the period, the LED therefore shines lessbrightly in the second phase, but this over a comparatively long period.Depending on the level of the voltage value of the first voltage signal,the lighting unit can be operated at a high brightness level withcomparatively high average light output or at a low brightness levelwith comparatively low average light output. In this context, it shouldbe noted that for a first voltage signal with a comparatively lowvoltage, the influence of the first phase of the period on the averagelight output of the LED is comparatively high, whereas for a firstvoltage signal with a high voltage value, the second phase of the periodin which the second voltage signal is applied to the lighting unit is ofdecisive importance for the average light output of the LED.

In this way, it is intended that the LED of the lighting unit, while thesecond voltage signal is applied to the lighting unit, is supplied withelectrical energy from an energy storage device designed as a capacitor.Furthermore, it is advantageous if the lighting unit is at leasttemporarily operated at a first, darker brightness level by setting thevoltage of the first voltage signal to a voltage value lying within afirst voltage interval and the lighting unit is at least temporarilyoperated at at least a second, brighter brightness level by setting thevoltage of the first voltage signal to a voltage value lying within atleast a second voltage interval, the voltages of which are higher thanthose of the first voltage interval.

In one embodiment it is provided that between two consecutive periodsthe voltage of the first voltage signal is varied without changing thebrightness level at which the lighting unit is operated. This means thatthe average light output of an LED is varied while it is operated at aconstant brightness level. The voltage of the first voltage signal isthus varied between two successive periods within the voltage intervalor voltage range provided for the corresponding brightness level.

In addition to the question of temperature stability and drift of aninput voltage or current through the diode due to process fluctuations,the pulse modulation used is also an aspect to be considered. In currentdisplays, light emitting diodes are usually operated in pulse widthmodulation, i.e. they are switched on and off in rapid succession forcontrast and brightness adjustment. The frequency is several 100 kHz upto the MHz range. The switching operations act back on the currentsource. This can affect the precision and stability of the power source.In the case of control loops within the power source, the switchingprocesses lead to spikes or other behaviour, which can bring the controlloop out of its control range.

Following these considerations, a regulated current source for μ-LEDswhich controls a current source in such a way that its output currentremains in its control state and follows a setpoint value even duringPWM modulation and in particular during switching operations. Thecurrent source and in particular the feedback loop is suitable

For this purpose the output current or a signal derived from it is fedto the control loop, which compares it with the setpoint. If the currentsource is now switched off or operated in an on/off mode (intermittentoperation), a substitute signal is fed to the control loop while theoutput current is switched off. The substitute signal keeps the controlloop in its control range. The substitute signal corresponds or issimilar to an expected output current or the signal derived from it. Allin all, continuous control in the output range is achieved in this way,independent of the switching state of a current source. The precisionand stability of the supply circuit is maintained.

In an embodiment, a supply circuit is proposed which comprises an errorcorrection detector with a reference signal input, an error signal inputand a correction signal output. Furthermore, a controllable currentsource with current output and a control signal connection is provided.The control signal terminal is connected to the correction signal outputto form a control loop for the controllable current source. In otherwords, the error correction detector controls the output current of thecurrent source within certain limits. The current source is thusconfigured to provide a current at the current output depending on asignal at the control signal terminal.

According to the proposed principle, the supply circuit comprises asubstitute source with one output, which is configured to provide asubstitute signal. Finally, a switching device is arranged in operativeconnection with the controllable current source and the error correctiondetector, so that the switching device, depending on a switching signal,supplies the error signal input with either a signal derived from thecurrent at the current output or the substitute signal with additionalseparation of the current output of the current source. In other words,the switching device is coupled to the controllable current source andthe error correction detector and is configured to supply either asignal derived from the current at the current output or the substitutesignal to the error signal input.

In addition, the switching device is configured to disconnect thecurrent output in the latter case.

This creates an arrangement that keeps the control loop in a controlrange independent of the operating state of the power source. Thecurrent source can thus be operated in a PWM or other intermittent modein addition to being controlled by the control loop and the errorcorrection detector.

It is useful if the substitute signal correspond substantially to thesignal derived from the current signal. In this way, the control loop,and especially the error correction detector, will provide a signal thatis hardly different from that of the current source, so that the controland the modulation remain intact.

In one aspect, the adjustable current source has a current mirror with aswitchable output branch. This is connected to the current output orforms it. The output branch may comprise one or more output transistorswhose control terminals or gates are connected to a control terminal ofa current mirror transistor arranged on the input side.

In another aspect, the output transistor of the output branch isconnected with its control terminal to the switching device. Theswitching device is configured, depending on the switching signal of theoutput transistor, to connect to a fixed potential for opening theoutput transistor or to connect the control terminal to the controlterminal of the current mirror transistor arranged on the input side.When the control terminal is at the fixed potential, the outputtransistor opens or closes, i.e. it no longer conducts current and theload and the output of the supply circuit are disconnected.

In another aspect, the switching device is located in the output branchand is configured to disconnect the current output or output transistorsfrom the load. The tap for the error signal input of the errorcorrection detector is located between the switching device and theload.

In another aspect, the adjustable current source has an input branch. Areference current signal can be fed to the input branch so that thecurrent source supplies an output current dependent on it. The inputbranch of the adjustable current source also includes a node, which isconnected to the reference signal input of the error correctiondetector. Thus, for example, the reference current, which is fed to thecurrent source to derive the output current, can also serve as areference signal for the error correction detector.

The adjustable current source may also include a current mirror, withthe control signal terminal connected to the control terminal of anoutput transistor of the current mirror. This allows a current throughthe output transistor to be changed with a control signal, thusproviding regulation. The control terminal of the output transistor ofthe current mirror is coupled to the current mirror transistor of thecurrent mirror via a capacitor in positive feedback. The capacitor isused for frequency compensation and thus improves the stability of thecontrol.

Another aspect concerns the differential amplifier. This can include adifferential amplifier whose two branches are connected to a supplypotential via a current mirror. Optionally, the two branches of thedifferential amplifier can each include an input transistor, which havedifferent geometrical parameters. Together with the current mirror,different fixed factors between reference and error signal can be takeninto account.

In a further aspect, the substitute source comprises an element coupledto the output for voltage generation, so that the substitute signalessentially corresponds to the signal derived from the current signal.This allows the substitute signal to simulate the current flowingthrough the load during regular operation, thus keeping the control loopin the control range.

The replacement source may comprise a series connection of acurrent-generating element and a voltage-generating element, with theoutput located between the two elements. Similarly, in a further aspect,the replacement source may comprise a transistor whose control terminalis connected to the control terminal of the current mirror transistor ofthe current source.

Another aspect concerns the switching device, which comprises one ormore transmission gates. The supply circuit may comprise a referencecurrent mirror configured to supply a current defined on the input sideto the error correction detector and to the current source on the outputside.

Another aspect concerns the use of a supply circuit for a power supplyof a μ-LED. This is powered by the power supply circuit, which is anon/off operation. This means that the μ-LED is driven by a pulse-widthmodulating signal from the power supply. This operation is not unusualfor optoelectronic devices, but the supply circuit generates a stableand precise output current during this pulse-width modulated operation.

Another aspect relates to a method for supplying a μ-LED. Here, a supplycurrent through the load is detected. This can be done by detecting thecurrent through the μ-LED. Alternatively, a signal can be derived fromthe current, which has a known relationship to the current through theload. The supply current or the signal derived from it is compared witha reference signal and a correction signal is generated from thiscomparison. With the help of the correction signal, the supply currentthrough the consumer is controlled to a reference value, if necessary.

It is now intended that the consumer is switched off at certainintervals, i.e. disconnected from the supply current. In such a case, asubstitute signal is generated instead of the signal derived from thesupply current and used for the comparison step. In other words, insteadof the supply current or a signal derived from it, the substitute signalis compared with the reference signal and a correction signal isgenerated from this comparison. This makes the control independent ofwhether the load is supplied with power or not. The substitute signalcan substantially correspond to a supply current through the consumer ora signal derived from it.

Another aspect lies in the realisation of a driver circuit with low ownpower consumption, which can nevertheless drive a large number ofoptoelectronic elements and especially μ-LEDs.

In a first aspect of the present application, a driver circuit isintended to drive or control a large number of optoelectronic elements.The optoelectronic elements are configured as μ-LEDs and are arranged inan array of rows and columns. Each μ-LED can represent one pixel.Alternatively, if each pixel includes several, for example three,sub-pixels, each μ-LED can form one of the sub-pixels.

The driver circuit comprises a plurality of first memory cells, each ofthe first memory cells being associated with a respective one of theμ-LEDs. In addition, each memory cell includes two inputs, referred toas a set input and reset input, and an output. The first memory cellsmay be latches and may be configured as 1-bit memories. Each firstmemory cell can have two different states at the output, a first stateand a second state, where the first state can be a high state and thesecond state can be a low state.

A set signal received from one of the first memory cells at the setinput triggers the first memory cell at the output to the first state.The first memory cell holds the first state until it is reset to thesecond state by a reset signal received at the reset input. The output,especially the output signal provided at the output, of each firstmemory cell is configured to control or drive a respective one of theμ-LEDs. In particular, the output signal determines whether the μ-LED isswitched on and emits light or is switched off and does not emit light.

CMOS technology would be particularly suitable for the production of thedriver circuit and also the first memory cells and their associatedcircuits. The driver circuit according to the first aspect is a digitaldriver circuit and requires less power and space compared toconventional driver circuits. Furthermore, the driver circuit accordingto the first aspect provides better linearity. Each first memory cellcan provide a pulse width modulation signal, PWM signal, at its output.

In an embodiment, each first memory cell comprises two cross-coupled NORgates or two cross-coupled NAND gates. Each of the NOR or NAND gates hastwo inputs and one output. The output of each of the NOR or NAND gatesis coupled to one of the inputs of the other NOR or NAND gate. The otherinput of one of the NOR or NAND gates receives the set signal, and theother input of the other of the NOR or NAND gates receives the resetsignal.

In an alternative embodiment, each first memory cell comprises an N-typemetal oxide semiconductor transistor, NMOS transistor, and a P-typemetal oxide semiconductor transistor, PMOS transistor, which areconnected in series, meaning that the channels of the two transistorsare connected in series. Furthermore, an input of an inverter isconnected between the NMOS transistor and the PMOS transistor, and anoutput of the inverter is connected to the gates of the NMOS and PMOStransistors. The driver circuit may include a plurality of loadablecounters, each configured to activate a set signal to turn on a currentthrough the respective μ-LED when data, such as a pulse width value, isloaded into the respective counter. The counter counts until the currentvalue reaches the loaded data value. Then the counter activates a resetsignal to turn off the current through the respective μ-LED.

When an array of μ-LEDs arranges them in N columns of pixels, the drivercircuit can include N counters that generate PWM signals for N columnsof pixels simultaneously per selected row. The driver circuit may alsoinclude a single common counter configured to generate a common orglobal dimming signal for the plurality of μ-LEDs.

To disconnect dark pixels, the driver circuit can include a large numberof second memory cells. Each second memory cell may be coupled to arespective one of the first memory cells and may be configured tooverride an output signal of the respective first memory cell whenrequired so that the respective μ-LED remains off. In other words, thesecond memory cells prevent the respective first memory cells fromturning on the respective μ-LED when these optoelectronic elementsrepresent dark pixels during a frame.

An optoelectronic device or μ-display according to a second aspect ofthe present application comprises a plurality of μ-LEDs and a drivercircuit for driving the plurality of μ-LEDs according to the firstaspect as described above. The μ-LEDs may be arranged in an array andmay form a display or a portion of a display. Each of the μ-LEDs canform one pixel of the array. Alternatively, each μ-LED can also form asub-pixel. For example, in an RGB pixel array, a pixel can contain threeoptoelectronic elements or μ-LEDs that emit red, green and blue lightrespectively. Alternatively, converter materials may be provided so thatat least two of the three μ-LEDs emit light of the same color, which isconverted by the converter material.

The μ-LED can be arranged above an integrated circuit, IC, which islocated below the μ-LED. The circuit can be formed in a differentmaterial system.

In a third aspect, a method for operating an optoelectronic device orμ-display according to the second aspect is provided. At the beginningof a frame, a global reset is performed and the pixel current isswitched off so that all optoelectronic elements are switched off. Next,dark pixels are loaded line by line. Thus, the optoelectronic elementsthat are dark during the frame are controlled by the second memorycells. Afterwards, a line by line content-dependent PWM, for examplegrayscale PWM, is performed. Thus, the current through theoptoelectronic elements is controlled by means of the first memorycells.

In addition, after a global reset at the beginning of a frame, the pixelstream can remain switched off until a common or global dimming starts.The common dimming of the optoelectronic elements can be performedbefore the current through the optoelectronic elements is controlled bythe first memory cells. The global dimming data can be combined with thegrayscale data in the video/image signal processor IC or by the μ-LEDdriver IC so that no separate global dimming pulse is required and thenonly the grayscale data is updated line by line. The optoelectronicdevice according to the second aspect and the method according to thethird aspect may include the embodiments disclosed above in connectionwith the driver circuit according to the first aspect.

A novel concept for the control of μ-LEDs, which are intended as pixels,is based on a analogeue ramp for lighting control.

For a control circuit for a display matrix comprising a plurality ofoptoelectronic devices arranged in rows and columns, pulse widthmodulation can be used to adjust the on/off behavior of each pixel.Although the principle seems to be similar to conventional pulse widthmodulation schemes, the implementation is different and takes intoaccount the small space available.

A control circuit for a matrix display, in particular a μ-LED matrixdisplay comprises a row selection input for a row selection signal, acolumn data input for a data signal, a ramp signal input for a rampsignal and a trigger input for a trigger signal. For the purpose ofexplanation, a ramp signal is a signal that varies over time from afirst value to a second value. Usually, a ramp signal is periodic. Thecircuit includes a column data buffer configured to buffer the datasignal in response to the row select signal. In some variants, the levelof the column data signal may correspond to the brightness of thelight-emitting device. A pulse generator is coupled to the column databuffer and the ramp signal input and configured to provide a bufferedoutput signal to control the on/off ratio of at least one of theplurality of light emitting devices in response to the trigger signal,the data signal and the ramp signal.

The proposed principle implements an analogeue pulse generator thatrequires only a small space. Since the ramp signal can be multiplexed inspace and time, artefacts caused by activation of different pixels canbe suppressed. Furthermore, time multiplexing when using the ramp signalleads to different switching behavior of the pixels. This means that theμ-LED associated with the pixels is switched at different times, whichcauses a more even power distribution and prevents current peaks.

In some variants, the pulse generator has a comparator device to comparethe buffered data signal with the ramp signal. The result is deliveredto an output buffer, which is coupled to an output of the comparator andthe trigger input, the column data buffer can act as an input buffer insuch embodiment. Together with the output buffer of the pulse generatora double buffering is realized, which allows to implement the circuit indisplays using a longer duty cycle, thus reducing update rates and thelike. In general, this concept will further reduce power consumption,which is preferred in advanced reality applications.

The output buffer can have a single memory stage, such as a flip-flop.In some variants, the buffer may contain an RS flip-flop, whose inputsare coupled to the output of the comparator device and, accordingly, tothe trigger input. In this respect it should be noted that depending onthe current implementation and the sign of the corresponding data andtrigger signals (positive or negative), inverted inputs of thecorresponding flip-flops can also be used. The column data buffer insome variants includes a capacitor to store the data signal and a switchlocated between the capacitor and the column data input.

The capacitor may comprise a small capacitance, just as the input buffercan only apply a voltage signal of the order of a few volts and thecomparator device has a very high input impedance. The comparator can beimplemented using a differential amplifier. For example, an invertinginput of the comparator can be coupled to the data column buffer and itsnon-inverting input can be coupled to the ramp signal input.

Depending on the implementation, the μ-LED coupled to the controlcircuit can only be active for a short period of time. In some variants,the μ-LED can only be active for about 50% of a normal cycle. In suchcases, it is useful to be able to disable unneeded parts of the controlcircuit. For this purpose, the comparator device may have a powercontrol input coupled to the trigger input for adjusting its powerconsumption based on the trigger signal. Alternatively, the comparatordevice may be coupled to the output buffer to control its powerconsumption based on an output state of the output buffer. In thisrespect, the output buffer may be configured to maintain its outputstate independently of its input coupled to the comparator device untilit is reset or triggered by the trigger signal.

Another aspect concerns the generation of the ramp signal. In somevariations, the control circuitry includes a ramp generator to providethe ramp signal to the ramp signal input, the ramp generator beingconfigured to generate a varying signal between a start value and an endvalue in response to a trigger signal. The ramp generator can beimplemented as a global ramp generator that sends a common ramp signalto various other control circuits. Alternatively, some ramp generatorscan be provided, where each individual ramp generator drives a number oflines and their respective pixels. Such an implementation allows tomultiplex the ramp signals temporarily and thus reduce the artefact.Furthermore, a ramp signal supplied by a ramp generator can also bemultiplexed before being applied to the ramp signal input.

Another aspect relates to a method of controlling the illumination of alight emitting device in a matrix display having a plurality of lightemitting devices arranged in addressable rows and columns. In accordancewith the proposed principle, the method comprises providing a triggersignal and a data signal for a selected row and at least one lightemitting device. A level of the data signal is then converted to a pulsewith respect to the trigger signal. More precisely, in some variants thelevel of the data signal is converted to a pulse width with respect to atrigger signal. The pulse is used to control the on/off ratio of thelight emitting device with a pulse.

In some aspects, converting a level of the data signal involvesgenerating a ramp signal between a first value and a second value. Thedata signal is compared with the ramp signal to generate a state signal.The state signal can be a digital signal. The pulse signal is then basedon the trigger signal and a change in the state signal. Essentially, thepulse signal is set from LOW to HIGH or reset from HIGH to LOW inresponse to the change in the state signal. Of course, this principle ofsetting the value and resetting the value can be changed.

The ramp signal can be generated or initiated in response to the triggersignal. In some variants, both signals can be derived from a commonsignal. Delivering a data signal can also include pre-buffering of thedata signal in some variants. For example, the data signal could bepre-buffered in a storage device such as a capacitor or the like.

Another aspect deals with the correction of errors in μ-LEDs of aμ-Display or μ-Display module that occur during their production bymeans of redundant μ-LED branches with selection fuse. Several conceptsare presented in this application to create redundant μ-LEDs inproduction.

With μ-displays a μ-LED can fail during production. This can be caused,for example, by faulty assembly or, in the case of monolithic displaymodules, by a fault in one of the layers. There are two main variants ofsuch an error. One is an open contact, known as “Open”, or a shortcircuit between the anode and cathode, known as “Short”. Both lead tothe failure of the cell's LED.

Redundant μ-LEDs are provided for each subpixel to reduce the failureprobability of a subpixel or a pixel. In the event of a defect,appropriate circuitry measures are taken to ensure that the cell doesnot fail, i.e. the defective LED can be decoupled from the currentsource. In some variants, however, this means that in a fault-free caseboth μ-LEDs are supplied by the same current source, namely the typicaland the redundant one. This in turn leads to a color shift resultingfrom a dependency between cross current and dominant wavelength. Inaddition, due to the process technology of μ-displays or modules, oftenonly one common cathode can be used for all LEDs. Depending on thefurther construction of the backplane (e.g. TFT backplanes), this canlead to the fact that only NMOS transistors (N-type metal oxidesemiconductor transistors) can be used to construct the pixel cell. In aconventional 2T1C (2 transistors, 1 capacitor) cell, this leads to aclear dependence between the cross-current of the LED and its forwardvoltage.

There are various approaches to solving these difficulties, most ofwhich, however, require additional work or space. According to theprinciple proposed here, a solution is given in which, on the one hand,redundancy is provided, but halving an electric current flowing througha light emitting diode is avoided. In addition, PMOS transistors can beused, which increases flexibility. The space consumption does notincrease significantly, so that the solutions are just suitable forμ-displays with low space per pixel or subpixel.

This involves the creation of a device for electronically driving aplurality of μ-LEDs of a pixel cell or sub-pixel, in particular as a2T1C cell. By means of a first transistor and an electronic imprintingcomponent associated with the μ-LED, a current flow is generated whichtriggers the fuse connected in series to this μ-LED.

A device for electronically driving a plurality of μ-LEDs of a pixelcell or subpixel thus comprises a first and at least one second patheach having a μ-LED connected therein and an electronic fuse arranged inseries with the μ-LED. The first and the at least one second path areconnected to one side with a potential terminal. Furthermore, a drivercircuit with a data signal input, a selection signal input and a driveroutput is provided. The driver output is connected to the other side ofthe first and the at least one second path. Finally, the devicecomprises an imprinting component associated with the at least onesecond path, which is configured to generate a current flow triggeringthe electronic fuse arranged in series.

A characterising feature thus consists in the introduction of anadditional imprint signal line in combination with an additionalelectronic imprint component, which can be adapted in particular as atransistor or as a diode. This ensures that after an end-of-line (EOL)test, only one LED per color and pixel is active, even in the case of anerror-free pixel. In other words, in the event of an error, the μ-LEDthat is still functioning is selected. If, on the other hand, there isno error, i.e. both μ-LEDs of a path are working, one of the two willstill be switched off permanently.

In a method for the electronic configuration of a plurality of μ-LEDs, atest of a function of the μ-LED of the first path and the second path isthus carried out first. If both μ-LEDs of the first and second path arefunctioning, an imprinting signal is applied to the electronicimprinting component. A current flow is then impressed into the secondpath of a fuse, which triggers the fuse connected in series with theμ-LED of the second path. For this purpose, the fuse is usuallyconfigured as a fuse link.

Depending on its embodiment, the imprinting component may comprise animprinting transistor whose current line contacts are electricallyparallel to the μ-LED to which the imprinting component is assigned andwhose control contact is connected to an imprinting signal line.Alternatively, the imprinting component can also comprise an imprintingdiode, which is connected with one terminal to the second terminal ofthe μ-LED to which the imprinting component is assigned. The otherterminal of the impress-in diode is connected to the impress-in signalline.

The proposed arrangement makes it possible to design the μ-LED as aso-called common anode or common cathode. This means that, depending onthe embodiment, the μ-LED of each path is either switched between supplypotential and current source or between current source and referencepotential connection. Thus, in one case the μ-LED is connected to thesupply potential connection and the electronic fuse. In the other case,the μ-LED is connected between the fuse and the reference potentialconnection. The current source is always connected to the electronicfuse of the respective path. The charge storage of the 2T1C cell isconnected to the gate of the current source transistor and the fixedpotential, i.e. to the potential terminal to which the current sourcetransistor is also connected.

In a further aspect, a μ-display or μ-display module with a variety ofthe devices described above is presented, in which pixel cells of theμ-display are electrically connected along a line and/or along a columnto a common imprint signal line. Each pixel cell of a column iselectrically connected to the supply potential terminal by means of acommon supply line to a switching transistor arranged on a commoncarrier outside the μ-display.

Small-scale display arrangements with a high resolution are particularlydesirable for AR systems, such as head-up displays or glasses with alight field display that projects a raster image directly onto theretina.

Micro OLEDs have been proposed for μ-displays with active pixel-sizedlight sources. Their disadvantage is their insufficient luminance andlimited lifetime. An alternative for self-luminous light sources, whichpromises a long lifetime and a high efficiency as well as additionally afast reaction time, is the use of μ-LEDs arranged in matrix form, forexample based on GaN or InGaN. These are particularly suitable fordisplay arrangements with a high packing density to form ahigh-resolution μ-display.

The starting point for the consideration is a display device comprisingan IC substrate component and a monolithic pixelated optochip mountedthereon. In the present case, a monolithic pixelated optochip isunderstood to be a matrix-shaped arrangement of light-emittingoptoelectronic light sources, which are created on a continuous chipsubstrate by a common manufacturing process. Some of the structurespresented here can be produced in a matrix. These include, for example,the antenna structure, vertical or horizontal μ-rods, the pairedbar-shaped configuration with converter material between the μ-LEDs orthe μ-LEDs along special crystal directions, to name a few non-limitingexamples. These light sources are adapted as μ-LEDs.

The IC substrate component features monolithic integrated circuits,which in turn result from a common manufacturing process. In addition,IC substrate contacts are arranged as a matrix on a top side of the ICsubstrate component facing the monolithic pixelated optochip.

The monolithic pixelated optochip comprises a semiconductor layersequence with a first semiconductor layer having a first doping and asecond semiconductor layer having a second doping, wherein the polarityof the charge carriers in the first semiconductor layer differs fromthat of the second semiconductor layer. Preferably, the firstsemiconductor layer and the second semiconductor layer extend laterallyover the entire monolithic pixelated optochip. For an embodiment, thefirst semiconductor layer may have a p-type doping and the secondsemiconductor layer may have an n-type doping. A reverse doping ispossible as well as the use of several sublayers of the same doping forat least one of the semiconductor layers, which differ in the dopingstrength and/or with respect to the semiconductor material. Inparticular, the semiconductor layer sequence can form a doubleheterostructure. Between the first semiconductor layer and the secondsemiconductor layer there is a region with a transition in whichlight-emitting active zones are formed during operation of the display.For a possible embodiment, the active zone is located in a doped orundoped active layer, which is placed between the first and the secondsemiconductor layer and has, for example, one or more quantum wellstructures.

The individual light-emitting, optoelectronic light sources of thepixelated optochip each represent μ-LEDs arranged as a matrix, eachμ-LED having a μ-LED rear side facing the IC substrate component and afirst light source contact which adjoins the first semiconductor layerin a contacting manner and is electrically conductively connected to oneof the IC substrate contacts in each case. In other words, each μ-LED inthe pixelated optochip is formed so as to include a region of one of theabove-mentioned active layers. Between adjacent μ-LEDs, the active layeror another of the above-mentioned layers may be interrupted, so thatcrosstalk is avoided.

The inventors recognized that a display arrangement with high packingdensity, which is simplified in terms of production technology, can berealized if the projection area of the first light source contact on theμ-LED rear side corresponds to at most half the area of the μ-LED rearside and the first light source contact is surrounded in lateraldirection by an absorber on the rear side. In the present case, thelateral direction is understood to be a direction perpendicular to astacking direction determined by averaging the surface normals of thesemiconductor layer sequence.

Due to a small area first light source contact, which is significantlysmaller than the pixel area of the assigned μ-LED, a lateral narrowingof the current path in the semiconductor layer stack results.Consequently, the lateral extension of an active zone is limited to [μm]dimensions, so that individually controllable μ-LEDs are separated fromeach other due to the localized recombination zone within thesemiconductor layer stack. The pixel size of each μ-LED, which isdefined as the maximum diagonal of the μ-LED backside, is <70 μm andpreferably <20 μm and especially preferred <7 μm. Again, the preferredfirst light source contact is significantly smaller, whereby foradvantageous embodiments the projection area of the first light sourcecontact on the μ-LED backside occupies at most 25% and preferably atmost 10% of the area of the μ-LED backside.

To limit the lateral expansion of the active zone, the firstsemiconductor layer and the second semiconductor layer are preferablyconfigured with a p or n conductivity of less than 10⁴ Sm−1, preferablyless than 3*10³ Sm−1, more preferably less than 103 Sm−1, so that thelateral expansion of the current path is limited. In addition, it isadvantageous if the layer thickness of the first semiconductor layer inthe stacking direction is at most ten times and preferably at most fivetimes the maximum diagonal of the first light source contact in thelateral direction.

For further embodiment, a first light source contact on the monolithicpixelated optochip does not directly abut the associated IC substratecontact. Instead, the actual optochip contact element, whosecross-sectional area is larger than that of the first light sourcecontact, lies below the first light source contact in relation to thestacking direction. This measure simplifies the positioning of themonolithic pixelated optochip on the IC substrate component and themutual contacting without worsening the lateral limitation of thecurrent path.

According to the invention, the area around the small first light sourcecontact is used for the arrangement of a rear absorber, which reducesthe optical crosstalk between adjacent μ-LEDs. In particular, thedownwardly directed electromagnetic radiation emanating from the activezone at an angle is absorbed as long as a limit angle to the stackingdirection is exceeded.

Preferred materials for the rear absorber are structured layers withsilicon, germanium and gallium arsenide. It is also possible toincorporate graphene or soot particles into the rear absorber.

The rear absorber laterally surrounds the first light source contact andextends laterally from it. Rear absorbers of adjacent μ-LEDs areadjacent to each other and are preferably made in one piece. For anembodiment, the rear absorber extends in stacking direction at least upto the first semiconductor layer. For a further embodiment, a partialsection of the rear absorber runs within the correspondingly structuredfirst semiconductor layer and shields the border region between adjacentμ-LEDs. For this purpose, additionally or alternatively reflectiveradiation blockers can be used, such as structured elements made ofreflector materials, such as aluminum, gold or silver, or of dielectricmaterials whose refractive index is lower than that of the firstsemiconductor layer. For further embodiment, the rear absorber not onlyfulfils an optical function, but also serves as an electrical insulatorto limit the current path laterally.

The display arrangement has a second light source contact for each μ-LEDin the stacking direction above the second semiconductor layer. Thiscontact is made of a transparent material such as indium tin oxide (ITO)and is electrically connected to a transparent, flat contact layer onthe front side of the pixelated optochip. For an advantageousembodiment, the second light source contact is formed by the large-areacontact layer itself, so that the entirety of the second light sourcecontacts of the μ-LEDs arranged in matrix form can be applied as onecommon area contact. For an alternative embodiment which further reducesoptical crosstalk, the second light source contact adjoins the contactlayer in each case in a contacting manner, second light source contactsof adjacent μ-LEDs being separated from one another by an absorber onthe front side in a lateral direction perpendicular to the stackingdirection. The front absorber may consist of a material absorbing theelectromagnetic radiation emitted by the active zone or of a materialreflecting this radiation. In addition or alternatively, the frontabsorber can act as an electrical insulator and contribute to thelateral restriction of the current path for the localization of therecombination zone to an area with [μm] dimensions.

For a possible further embodiment, the front absorber extends againstthe stacking direction at least in a part of the second semiconductorlayer. Furthermore, the lower and/or the upper sides of the second lightsource contact and/or the contact layer and/or the upper side of thesecond semiconductor layer may have an optically effective structuringto improve light extraction.

For a proposed method of manufacturing a display arrangement, an ICsubstrate component with monolithic integrated circuits and with ICsubstrate contacts arranged as a matrix is electrically conductivelyconnected to a monolithic pixelated optochip. For the precedingmanufacturing of the monolithic pixelated optochip, a semiconductorlayer sequence with a first semiconductor layer having a first dopingand a second semiconductor layer having a second doping is grownpreferably epitaxially, the polarity of the charge carriers in the firstsemiconductor layer differing from that of the second semiconductorlayer and the semiconductor layer sequence defining a stackingdirection. Furthermore, μ-LEDs arranged in the pixelated optochip as amatrix are applied, each μ-LED having a rear side facing the ICsubstrate component and a first light source contact which adjoins thefirst semiconductor layer in a contacting manner and is electricallyconductively connected to a respective one of the IC substrate contacts.In accordance with the invention, the first light source contact isformed with such a size that its projection surface with a surfacenormal perpendicular to the stacking direction occupies at most half thesurface of the rear side of the μ-LED. In addition, the first lightsource contact is surrounded by an absorber on the rear side in alateral direction perpendicular to the stacking direction.

Besides the different concepts for driving and providing a redundancycircuit, another aspect is to connect the carrier with the μ-LEDs or themonolithic array with a carrier that contains the driving. There areconcepts that try to realize both μ-LEDs and the IC circuits in the samematerial system. This is to be advocated per se and can be realized atleast in parts. However, the material systems for μ-LEDs havedisadvantages, so that they are only partially suitable for IC circuits.

Another aspect is to create different material systems for thegeneration of the driving circuits on one side and the μ-LEDs in amatrix arrangement on the other side. There are substantially twopossibilities for this. Firstly, one material system can be started withand the components can be manufactured, then a transition to the othermaterial system is created and in this the further components areprovided. Supply lines through the material systems and connect thecomponents. One difficulty with this approach is to select and set thedifferent process parameters in such a way that it is possible tomanufacture one “side” without damaging the other “side”. For example,the process temperature (e.g. for diffusion or implantation processes)is very different, so that depending on the temperature, no or undesireddiffusion occurs. In this way, components can be damaged. In someaspects it is proposed to manufacture the control in one technology, forexample on silicon basis, and then to grow different material systems asμ-rods or similar.

Another approach proposes to manufacture the control and pixel arrayseparately and then connect them electrically and mechanically. In thisway, the needs and requirements of the respective situation can beadapted and production can be optimized. Due to the small size ofμ-LEDs, precise orientation for contacting is essential. The aboveexample already illustrates this problem and suggests a solution. On theother hand, the use of digital control techniques allows reducing thenumber of necessary contact pads between the carriers without limitingthe functionality. For the production of μ-displays or even displaydevices and matrices, novel digital and analogeue concepts developed andjointly implemented.

One aspect of the design of a μ-LED display concerns the control of thelight emission elements or μ-LEDs in a μ-display. The μ-Display thus hasa plurality of μ-LEDs arranged in rows and columns. In some aspects, theμ-LEDs can be combined into subunits. This makes them easier tomanufacture, test and process.

The limited space available under the actual matrix elements and pixelsrequires further considerations regarding addressing and control of theindividual pixels. Conventional approaches and techniques may not beapplicable due to the limited space. This may also apply to conceptswhere the current is controlled by each pixel.

In one embodiment a μ-display is provided, which has a plurality ofpixel structure arranged in rows and columns. A first substratestructure is manufactured in a first material system and has a pluralityof μ-LEDs whose edge length is 70 μm or less, in particular less than 20μm. The μ-LEDs are individually addressable by lines in and/or on thefirst substrate structure. A large number of contacts are arranged on asurface of the first substrate structure facing away from the mainradiation direction.

Furthermore, the μ-display has a second substrate structure, whichcomprises a plurality of digital circuits for addressing the μ-LEDs. Thesecond substrate structure is manufactured in a different materialsystem than the first substrate structure. The second substratestructure comprises on one surface a plurality of contacts correspondingto the contacts of the first substrate structure. According to theproposed principle, the first and second substrate structures are nowmechanically and electrically connected to each other so that thecontact areas correspond to each other. In accordance with this concept,it is proposed to manufacture digital and analogeue elements of adisplay separately in different material systems and then to connectthem with each other. This allows the optimal technology to be used ineach case.

In this context, the first substrate structure with μ-LEDs can beconfigured as a monolithic module. In addition, the modular designrevealed here can be used. Thus, the first substrate structure itselfwould be a carrier for the modules comprising the different μ-LEDs. Thefirst substrate structure includes in some aspects the analogeuecircuits, for example a current source for each pixel. The redundancycircuits and driver circuits provided here are also conceivable. Adesign of these circuits in thin-film technology is possible, as long asthe requirements for a current carrying capacity are not too high. Ifpossible, it may be appropriate in some aspects to provide multiplexersor other circuits in the first substrate structure. This can reduce thenumber of contact areas between the first and second substratestructure. Simple switches, each selecting one of two μ-LEDs, reduce thenumber of necessary contact areas by about half. In other aspects,contacts may be grouped together, for example when using a commoncathode layer for the μ-LEDs.

The μ-LEDs have an edge length of 20 μm or less. For particularly smallμ-displays the edge length can be 2 μm to 5 μm. Depending on theembodiment, the contacts can be the same size as the μ-LEDs, but alsosmaller.

As far as material systems are concerned, the choice is flexible, witheach technology and material system bringing its own advantages andchallenges. The second substrate structure is based, among others, onmonocrystalline, polycrystalline or amorphous silicon. To realizedigital circuits in these material systems is well understood and can bescaled to small sizes. Likewise, indium-gallium-zinc-oxide, GaN or GaAsare suitable as material systems for the second substrate structure. Asmaterial system for the first substrate structure, at least one of thefollowing compounds can be used: GaN, GaP, GaInP, InAlP, GaAlP, GaAlInP,GaAs or AlGaAs. One aspect can be the different thermal expansions andcrystallographic parameters depending on the material systems used.Therefore, both substrate structures are often not bonded togetherdirectly, but via several intermediate layers.

The second substrate structure with the digital circuits, in addition tothe supply lines, can also contain a variety of digital circuits togenerate a PWM-like signal from a clock signal and a data word for eachpixel. Furthermore, it is possible to implement series-connected shiftregisters whose respective length corresponds to the data word for onepixel, each shift register being connected to a buffer for intermediatestorage.

For the already mentioned reduction of contact areas, the secondsubstrate structure can comprise one or more multiplexers, which areelectrically coupled to a demultiplexer in the first substrate structurefor driving several μ-LEDs.

BRIEF DESCRIPTION OF THE DRAWINGS

In the following section, some of the above-mentioned and summarizedaspects are explained in more detail using various explanations andexamples.

FIG. 1A shows a diagram illustrating some requirements for so-calledμ-displays or micro-displays of different sizes with respect to thefield of view and pixel pitch of the μ-display;

FIG. 1B shows a diagram of the spatial distribution of rods and cones inthe human eye;

FIG. 1C shows a diagram of the perceptual capacity of the human eye withassigned projection areas;

FIG. 1D is a figure showing the sensitivity of the rods and cones overthe wavelength;

FIG. 2A is a diagram illustrating some requirements for micro-displaysof different sizes in terms of the field of view and the angle ofcollimation of a pixel of the μ-display;

FIG. 2B illustrates an exemplary execution of a pixel arrangement toillustrate the parameters used in FIGS. 1A and 2A;

FIG. 3A shows a diagram illustrating the number of pixels requireddepending on the field of view for a specific resolution;

FIGS. 3B-1 and 3B-2 include a table of preferred applications for μ-LEDarrays;

FIG. 4A shows a principle representation of a μ-LED display withessential elements for light generation and light guidance;

FIG. 4B shows a schematic representation of a μ-LED array with similarμ-LEDs;

FIG. 4C is a schematic representation of a μ-LED array with μ-LEDs ofdifferent light colors;

FIG. 5A illustrates an embodiment of a dual-gate transistor in across-section;

FIG. 5B shows two top views of the dual-gate transistor;

FIG. 5C illustrates a plot of the dependence of a threshold voltage on atop-gate voltage;

FIG. 6 shows a first embodiment of a control circuit for a μ-LED withsome aspects according to the presented concept;

FIG. 7 shows a second embodiment of a control circuit for a μ-LED withfurther aspects;

FIG. 8 is a third embodiment of a control circuit for a μ-LED accordingto some aspects of the proposed concept;

FIG. 9 shows embodiment of a control circuit for a μ-LED with furtheraspects;

FIG. 10 illustrates a further embodiment of a control circuit for aμ-LED according to some aspects of the proposed concept;

FIG. 11 shows a further embodiment in addition to the previous figure;

FIG. 12 shows a fifth embodiment of a control circuit for a μ-LEDaccording to some aspects;

FIG. 13 shows a circuit diagram of an SRAM-6-T cell to illustrate oneaspect;

FIG. 14 shows a circuit diagram of a driver circuit to illustrate someaspects;

FIG. 15 is a schematic representation of a display with digital elementsand the pixel array according to some of the proposed aspects;

FIG. 16 shows a circuit to illustrate the clock for dark pixels;

FIG. 17 is a representation of a global bias for the pixel streamaccording to some aspects;

FIG. 18 shows a signal-time diagram with some signals according to theembodiment of FIG. 15;

FIG. 19 shows another embodiment of a driver circuit with reduced spaceconsumption;

FIG. 20 shows embodiments of another driver circuit that also has areduced space consumption;

FIG. 21A shows a schematic diagram of a driver circuit for two μ-LEDs toexplain some aspects of dimmable control according to some aspects;

FIG. 21B shows an embodiment of the dimmable control with a μ-LEDmodule;

FIG. 22 is a diagram of the LED current flowing through the LED as afunction of different capacitor voltages;

FIG. 23 shows a schematic representation of the brightness of a lightingunit with LED when driven with a comparatively high first voltagesignal;

FIG. 24 is another schematic representation of the brightness of alighting unit with LED when driven with a comparatively low firstvoltage signal;

FIG. 25 is a diagram showing the average light output of a lighting unitwith LED as a function of the voltage selected for the capacitor voltageaccording to some aspects of the concept presented here;

FIG. 26 shows a block diagram of the main components of a PWM supplycircuit for μ-LEDs;

FIG. 27 is an embodiment of a PWM supply circuit for μ-LED according tothe proposed principle;

FIG. 28 shows the embodiment of FIG. 27 in an operating state withadditional information on the signal flow;

FIG. 29 shows two principle illustrations of two simple switch devices;

FIG. 30 illustrates a signal-time diagram of the proposed embodimentwith the signal points shown in FIG. 27;

FIG. 31 shows an illustrative version of an analogeue ramp-based controlcircuit suitable for controlling the on/off ratio for light-emittingdevices in a μ-LED display;

FIG. 32 illustrates a signal-time diagram with different signals of theconcept according to FIG. 31;

FIG. 33 shows a circuit diagram of a pixel cell with redundant μ-LEDsand fuses to separate a μ-LED;

FIG. 34 shows a further embodiment of a circuit with redundant μ-LEDs,in which a defect of a μ-LED can be compensated;

FIG. 35 illustrates a third embodiment of a circuit with redundantμ-LEDs according to some aspects of the presented concept;

FIG. 36 shows a fourth embodiment of a circuit with redundant μ-LEDs inwhich a defective μ-LED can be replaced;

FIG. 37 shows a fifth embodiment of a circuit with redundant μ-LEDs;

FIG. 38 is a sixth embodiment of a circuit with redundant μ-LEDs, inwhich a defect of a μ-LED is compensated;

FIG. 39 shows an outline of a procedure for testing and configuring apixel cell that is driven by one of the circuits presented above;

FIG. 40 illustrates a circuit for driving and testing μ-LEDs accordingto aspects of the proposed concept of a slot antenna based on theprinciple disclosed in this application;

FIG. 41 is an embodiment of a controller with a different μ-LED conceptaccording to some aspects;

FIG. 42 shows a further embodiment of a control with a μ-LED conceptpresented here;

FIG. 43 shows an embodiment of a display device consisting of amonolithic pixel array with a monolithic IC in cross-sectional viewaccording to some aspects of the proposed concept;

FIG. 44 shows the previous embodiment of the proposed display device incross-sectional view with a sketched possible light path;

FIG. 45 illustrates a second embodiment of the proposed display devicewith monolithic pixel array and IC in cross-sectional view;

FIG. 46 is a third embodiment of the proposed display device incross-sectional view according to further aspects of the proposedprinciple;

FIG. 47 shows a fourth embodiment of the proposed display device incross-sectional view with additional measures for light guidance;

FIGS. 48A and 48B show two alternative embodiment to improve thelocalization of charge carriers in one of the proposed display deviceswith further aspects from this disclosure;

FIG. 49A illustrates a circuit diagram for a control circuit of one ormore LEDs, taking into account the requirements for geometry and size;

FIG. 49B shows an alternative embodiment of a schematic diagram of adriver circuit for several μ-LEDs, taking into account the requirementsfor geometry and size;

FIG. 49C shows a version of a comparator circuit, as it can be used in acomparator instead of an OR gate as used in FIG. 49A;

FIG. 49D shows a time diagram for the various counter words 1D to 3D andthe memory registers as they are used to generate the output signal;

FIG. 50A shows a sectional view of a μ-LED display arrangement;

FIG. 50B shows various examples of how the different sections areconnected after the execution of FIGS. 49A and 50A;

FIG. 51 shows an example of an inverted transistor of offset type usingamorphous silicon for use in the analogeue part of a μ-LED driver;

FIG. 52 illustrates some examples of polysilicon transistors suitablefor a μ-LED driver circuit;

FIG. 53 shows a circuit diagram of a μ-LED or LED display;

FIG. 54 shows a circuit diagram of a μ-LED display segmented intodifferent sub-matrices;

FIG. 55 illustrates a conventional approach for a driver circuit for anLED in one pixel of a display;

FIG. 56 illustrates a version of a conventional gap driver suitable foruse in a display;

FIG. 57 shows a version of a conventional line driver suitable for usein a display.

DETAILED DESCRIPTION

Augmented reality is usually generated by a dedicated display whoseimage is superimposed on reality. Such device can be positioned directlyin the user's line of sight, i.e. directly in front of it.Alternatively, optical beam guidance elements can be used to guide thelight from a display to the user's eye.

In both cases, the display may be implemented and be part of the glassesor other visually enhancing devices worn by the user. Google's™ Glassesis an example of such a visually augmenting device that allows the userto overlay certain information about real world objects. For the Google™glasses, the information was displayed on a small screen placed in frontof one of the lenses. In this respect, the appearance of such anadditional device is a key characteristic of eyeglasses, combiningtechnical functionality with a design aspect when wearing glasses. Inthe meantime, users require glasses without such bulky or easily damageddevices to provide advanced reality functionality. One idea, therefore,is that the glasses themselves become a display or at least a screen onor into which the information is projected.

In such cases, the field of vision for the user is limited to thedimension of the glasses. Accordingly, the area onto which extendedreality functionality can be projected is approximately the size of apair of spectacles. Here, the same, but also different information canbe projected on, into or onto the two lenses of a pair of spectacles.

In addition, the image that the user experiences when wearing glasseswith augmented reality functionality should have a resolution thatcreates a seamless impression to the user, so that the user does notperceive the augmented reality as a pixelated object or as alow-resolution element. Straight bevelled edges, arrows or similarelements show a staircase shape that is disturbing for the user at lowresolutions.

In order to achieve the desired impression, two display parameters areconsidered important, which have an influence on the visual impressionfor a given or known human sight. One is the pixel size itself, i.e. thegeometric shape and dimension of a single pixel or the area of 3subpixels representing the pixel. The second parameter is the pixelpitch, i.e. the distance between two adjacent pixels or, if necessary,subpixels. Sometimes the pixel pitch is also called pixel gap. A largerpixel pitch can be detected by a user and is perceived as a gap betweenthe pixels and in some cases causes the so-called fly screen effect. Thegap should therefore not exceed a certain limit.

The maximum angular resolution of the human eye is typically between0.02 and 0.03 angular degrees, which roughly corresponds to 1.2 to 1.8arc minutes per line pair. This results in a pixel gap of 0.6-0.9 arcminutes. Some current mobile phone displays have about 400 pixels/inch,resulting in a viewing angle of approximately 2.9° at a distance of 25cm from a user's eye or approximately 70 pixels/° viewing angle and cm.The distance between two pixels in such displays is therefore in therange of the maximum angular resolution. Furthermore, the pixel sizeitself is about 56 μm.

FIG. 1A illustrates the pixel pitch, i.e. the distance between twoadjacent pixels as a function of the field of view in angular degrees.In this respect, the field of view is the extension of the observableworld seen at a given moment. This is because human vision is defined asthe number of degrees of the angle of view during stable fixation of theeye.

In particular, humans have a forward horizontal arc of their field ofvision for both eyes of slightly more than 210°, while the vertical arcof their field of vision for humans is around 135°. However, the rangeof visual abilities is not uniform across the field of vision and canvary from person to person.

The binocular vision of humans covers approximately 114° horizontally(peripheral vision), and about 90° vertically. The remaining degrees onboth sides have no binocular area but can be considered part of thefield of vision.

Furthermore, color vision and the ability to perceive shapes andmovement can further limit the horizontal and vertical field of vision.The rods and cones responsible for color vision are not evenlydistributed.

This point of view is shown in more detail in FIGS. 1B to 1D. In thearea of central vision, i.e. directly in front of the eye, as requiredfor Augmented Reality applications and partly also in the automotivesector, the sensitivity of the eye is very high both in terms of spatialresolution and in terms of color perception.

FIG. 1B shows the spatial density of rods and cones per mm² as afunction of the fovea angle. FIG. 1C describes the color sensitivity ofcones and rods as a function of wavelength. In the central area of thefovea, the increased density of cones (L, S and M) means that bettercolor vision predominates. At a distance of about 25° around the fovea,the sensitivity begins to decrease and the density of the visual cellsdecreases. Towards the edge, the sensitivity of color vision decreases,but at the same time contrast vision by means of the rods remains over alarger angular range. Overall, the eye develops a radially symmetricalvisual pattern rather than a Cartesian visual pattern. A high resolutionfor all primary colors is therefore required, especially in the center.At the edge it may be sufficient to work with an emitter adapted to thespectral sensitivity of the rods (max. sensitivity at 498 nm, see FIG.1D and the sensitivity of the eye).

FIG. 1C shows the different perceptual capacity of the human eye bymeans of a graph of the angular resolution A relative to the angulardeviation α from the optical axis of the eye. It can be seen that thehighest angular resolution A is in an interval of the angular deviationα of +/−2.5°, in which the fovea centralis 7 with a diameter of 1.5 mmis located on the retina 19. In addition, the position of the blind spot22 on the retina 19 is sketched, which is located in the area of theoptic nerve papilla 23, which has a position with an angular deviation aof about 15°.

The eye compensates this non-constant density and also the so-calledblind spot by small movements of the eye. Such changes in the directionof vision or focus can be counteracted by suitable optics and trackingof the eye.

Furthermore, even with glasses, the field of vision is furtherrestricted and, for example, can be approximately in the range of 80°for each lens.

The pixel pitch in FIG. 1A on the Y-axis is given in μm and defines thedistance between two adjacent pixels. The various curves C1 to C7 definethe diagonal dimension of a corresponding display from 5 mm toapproximately 35 mm. For example, curve C1 corresponds to a display withthe diagonal size of 5 mm, i.e. a side length of approximately 2.25 mm.For a field of view of approximately 80°, the pixel pitch of a displaywith a diagonal size of 5 mm is in the range of 1 μm. For largerdisplays like curve C7 and 35 mm diagonal size, the same field of viewcan be implemented with a pixel pitch of approximately 5 μm.

Nevertheless, the curves in FIG. 1A illustrate that for larger fields ofview, which are preferred for extended reality applications, very highpixel densities with small pixel pitch are required if the well-knownfly screen effect is to be avoided. One can now calculate the size ofthe pixel for a given number of pixels, a given field of view and agiven diagonal size of a μ-display.

Equation 1 shows the relationship between dimension D of a pixel, pixelpitch pp, number N of pixels and the edge length d of the display. Thedistance r between two adjacent pixels calculated from their respectivecenters is given by

r=d/2+pp+d/2.

D=d/N−pp

N=d/(D+pp)  (1)

Assuming that the display (e.g. glasses) is at a distance of 2.54 cm (1inch) from the eye, the distance r between two adjacent pixels for anangular resolution of 1 arcminute as roughly estimated above is given by

r=)tan(1/60°*30 mm

r=8.7 μm

The size of a pixel is therefore smaller than 10 μm, especially if somespace is required between two different pixels. With a distance, rbetween two pixels and a display with the size of 15 mm×10 mm, 1720×1150pixels can be arranged on the surface.

FIG. 2B shows an arrangement, which has a carrier 21 on which a largenumber of pixels, 20 and 20 a to 20 c are arranged. Pixels arranged sideby side have the pixel pitch pp, while pixels 20 a to 20 c are placed oncarrier 21 with a larger pixel pitch pp. The distance between two pixelsis given by the sum of the pixel pitch and half the size for eachadjacent pixel. Each of the pixels 20 is configured so that itsillumination characteristic or its emission vector 22 is substantiallyperpendicular to the emission surface of the corresponding LED.

The angle between the perpendicular axes to the emission surface of theLED and the beam vector is defined as the collimation angle. In theexample of emission vector 22, the collimation angle of LEDs 20 isapproximately zero. LED 20 emits light that is collinear and does notwiden significantly.

In contrast, the collimation angle of the emission vector 23 of the LEDpixels 20 a to 20 c is quite large and in the range of approximately45°. As a result, part of the light emitted by LED 20 a overlaps withthe emission of an adjacent LED 20 b.

The emission of the LEDs 20 a to 20 c is partially overlapping, so thatits superposition of the corresponding light emission occurs. In casethe LEDs emit light of different colors, the result will be a colormixture or a combined color. A similar effect occurs between areas ofhigh contrast, i.e. when LED 20 a is dark while LED 20 b emits a certainlight. Because of the overlap, the contrast is reduced and informationabout each individual position corresponding to a pixel position isreduced.

In displays where the distance to the user's eye is only small, as inthe applications mentioned above, a larger collimation angle is ratherannoying due to the effects mentioned above and other disadvantages. Auser is able to see a wide collimation angle and may perceive displayedobjects in slightly different colors blurred or with reduced contrast.

FIG. 2A illustrates in this respect the requirement for the collimationangle in degrees against the field of view in degrees, independent ofspecific display sizes. For smaller display sizes such as the one incurve C1 (approx. 5 mm diagonal), the collimation angle increasessignificantly depending on the field of view.

As the size of the display increases, the collimation angle requirementschange drastically, so that even for large display geometries such asthose illustrated in curve C7, the collimation angle reaches about 10°for a field of view of 100°. In other words, the collimation anglerequirements for larger displays and larger fields of view areincreasing. In such displays, light emitted by a pixel must be highlycollimated to avoid or reduce the effects mentioned above. Consequently,strong collimation is required when displays with a large field of vieware to be made available to a user, even if the display geometry isrelatively large.

As a result of the above diagrams and equations, one can deduce that therequirements regarding pixel pitch and collimation angle becomeincreasingly challenging as the display geometry and field of view grow.As already indicated by equation 1, the dimension of the displayincreases strongly with a larger number of pixels. Conversely, a largenumber of pixels is required for large fields of view if sufficientresolution is to be achieved and fly screens or other disturbing effectsare to be avoided.

FIG. 3A shows a diagram of the number of pixels required to achieve anangular resolution of 1.3 arc minutes. For a field of view ofapproximately 80°, the number of pixels exceeds 5 million. It is easy toestimate that the size of the pixels for a QHD resolution is well below10 μm, even if the display is 15 mm×10 mm. In summary, advanced realitydisplays with resolutions in the HD range, i.e. 1080p, require a totalof 2.0736 million pixels. This allows a field of view of approximately50° to be covered. Such a quantity of pixels arranged on a display sizeof 10×10 mm with a distance between the pixels of 1 μm results in apixel size of about 4 μm.

In contrast, the table in FIGS. 3B-1 and 3B-2 shows several applicationareas in which μ-LED arrays can be used. The table shows applications(use case) of μ-LED arrays in vehicles (Auto) or for multimedia (MM),such as automotive displays and exemplary values regarding the minimumand maximum display size (min. and max. size X Y [cm]), the pixeldensity (PPI) and the pixel pitch (PP [μm]) as well as the resolution(Res.-Type) and the distance of the viewer (Viewing Distance [cm]) tothe lighting device or display. In this context, the abbreviations “verylow res”, “low res”, “mid res” and “high res” have the followingmeaning:

very low res pixel pitch approx. 0.8-3 mm low res Pixel pitch approx.0.5-0.8 mm mid res Pixel pitch approx. 0.1-0.5 mm high res Pixel pitchless than 0.1 mm

The upper part of the table, entitled “Direct Emitter Displays”, showsinventive applications of μ-LED arrays in displays and lighting devicesin vehicles and for the multimedia sector. The lower part of the table,titled “Transparent Direct Emitter Displays”, names various applicationsof μ-LED arrays in transparent displays and transparent lightingdevices. Some of the applications of μ-displays listed in the table areexplained in more detail below in the form of embodiments.

The above considerations make it clear that challenges are considerablein terms of resolution, collimation and field of view suitable forextended reality applications. Accordingly, very high demands are placedon the technical implementation of such displays.

Conventional techniques are configured for the production of displaysthat have LEDs with edge lengths in the range of 100 μm or even more.However, they cannot be automatically scaled to the sizes of 70 μm andbelow required here. Pixel sizes of a few μm as well as distances of afew μm or even less come closer to the order of magnitude of thewavelength of the generated light and make novel technologies inprocessing necessary.

In addition, new challenges in light collimation and light direction areemerging. Optical lenses, for example, which can be easily structuredfor larger LEDs and can also be calculated using classical optics,cannot be reduced to such a small size without the Maxwell equations.Apart from this, the production of such small lenses is hardly possiblewithout large errors or deviations. In some variants, quantum effectscan influence the behaviour of pixels of the above-mentioned size andhave to be considered. Tolerances in manufacturing or transfertechniques from pixels to sub mounts or matrix structures are becomingincreasingly demanding. Likewise, the pixels must be contacted andindividually controllable. Conventional circuits have a spacerequirement, which in some cases exceeds the pixel area, resulting in anarrangement and space problem.

Accordingly, new concepts for the control and accessibility of pixels ofthis size can be quite different from conventional technologies.Finally, a focus is on the power consumption of such displays andcontrollers. Especially for mobile applications, a low power consumptionis desirable.

In summary, for many concepts that work for larger pixel sizes,extensive changes must be made before a reduction can be successful.While concepts that can be easily up scaled to LEDs at 2000 μm for theproduction of LEDs in the 200 μm range, downscaling to 20 μm is muchmore difficult. Many documents and literature that disclose suchconcepts have not taken into account the various effects and increaseddemands on the very small dimensions and are therefore not directlysuitable or limited to pixel sizes well above 70 μm.

In the following, various aspects of the structure and design of μ-LEDsemiconductors, aspects of processing, light extraction and lightguidance, display and control are presented.

These are suitable and designed to realize displays with pixel sizes inthe range of 70 μm and below. Some concepts are specifically designedfor the production, light extraction and control of μ-LEDs with an edgelength of less than 20 μm and especially less than 10 μm. It goeswithout saying, and is even desired, that the concepts presented herecan and should be combined with each other for the different aspects.This concerns for example a concept for the production of a μ-LED with aconcept for light extraction. In concrete terms, a μ-LED implemented bymeans of methods to avoid defects at edges or methods for currentconduction or current constriction can be provided with light extractionstructures based on photonic crystal structures. Likewise, a specialdrive can also be realized for displays whose pixel size is variable.Light guidance with piezoelectric mirrors can be realized for μ-LEDsdisplays based on the slot antenna aspect or on conventional monolithicpixel matrices.

In some of the following embodiments and described aspects, additionalexamples of a combination of the different embodiments or individualaspects thereof are suggested. These are intended to illustrate that thevarious aspects, embodiments or parts thereof can be combined with eachother by the skilled person. Some applications require specially adaptedconcepts; in other applications, the requirements for the technology aresomewhat lower. Automotive applications and displays, for example, mayhave a longer pixel edge length due to the generally somewhat greaterdistance to a user. Especially there, besides applications of extendedreality, classical pixel applications or virtual reality applicationsexist. This is in the context of this disclosure for the realization ofμ-LED displays, whose pixel edge length is in the range of 70 μm andbelow, also explicitly desired.

A general illustration of the main components of a pixel in a μ-displayis shown schematically in FIG. 4A. It shows an element 60 as a lightgenerating and light emitting device. Various aspects of this aredescribed in more detail below in the section on light generation andprocessing. Element 60 also includes basic circuits, interconnects, andsuch to control the illumination, intensity, and, when applicable, colorof the pixel. Aspects of this are described in more detail in thesection on light control. Apart from light generation, the emitted lightmust be collimated. For this purpose, many pixels in microdisplays havesuch collimation functionality in element 60. The parallel light inelement 63 is then fed for light guidance into some optics 64, forfurther shaping and the like. Light collimation and optics suitable forimplementing pixels for microdisplays are described in the section onlight extraction and light guidance.

The pixel device of FIG. 4A illustrates the different components andaspects as separate elements. An expert will recognize that manycomponents can be integrated into a single device. In practice, theheight of a μ-display is also limited, resulting in a desired flatarrangement.

For displays a control of each pixel is done individually and separatedfrom a second pixel to provide the appropriate flexibility to visualizeany kind of information. In simple terms, it requires it requirescontrolling separately approximately 2 million pixels in a matrix of1920×1080 pixels as in conventional TVs or monitors. Apart from thechallenges of addressing such a number of pixels individually, inaugmented reality and automotive applications, the display is quitesmall and the pixel size, as mentioned above, is only a few μm.

In conventional drivers for larger pixel sizes and displays, theanalogeue drivers, like the digital circuits, can be easily placed underthe corresponding pixels. In such conventional displays with a pixel,size of for example 200 μm² the available space “under” the pixel is ofthe same order of magnitude. The driver circuit could easily beimplemented in the available space and the size of the pixel itselfwould not be the limiting factor. However, with the reduced size of thepixels, the available space is no longer sufficient for conventionalcircuitry. A similar problem arises when using digital circuittechnology in the material systems used so far. Silicon technologyoffers possibilities to further reduce the size of circuits, but thismaterial system cannot easily be combined with existing materials forgenerating blue or green light.

Therefore, new concepts are needed, which can roughly be divided intotwo areas. The first area refers to new designs of transistors,capacitors or other elements. The designs themselves may exist forcompletely different applications or fields of technology but not incombination with the material systems used for the μ-LED or incombination with μ-LEDs as such. The second area relates to circuitdesign and the principles of driving μ-LED pixels. Simply put, digitaltransmission paths to address the pixels in rows and columns take upspace, as does the corresponding row and column decoding. The sameapplies to the realization of current sources or buffers to supply theindividual μ-LEDs with the necessary current. The design in monolithicas well as single μ-LEDs can allow different concepts to achieve a goodvisual impression with new approaches in addressing the μ-LEDs in adisplay.

FIG. 5A shows an embodiment of a current driver for μ-LEDs with backgateand dual-gate transistor, respectively, which is formed in NMOStechnology. This design can be realized in a particularly compact formwith only little space consumption.

Such a back-gate transistor is often used as a current driver transistoror as a current source. It is constructed in TFT (thin-film technology),among other things, and has a second control connection, also known as aback gate, in addition to its standard control connection or gate. Withthe help of this additional back gate, the conductive channel of thetransistor can be changed as explained below. Instead of an additionaltransistor for pulse width modulation (PWM), the back gate of anexisting dual-gate transistor can now be modulated with a PWM signal.

FIG. 5A shows a cross-section of a backgated NMOS field-effecttransistor. On the left side is a source region S, on the right side isa drain region D, with a current conducting channel between the tworegions. The resistance of the channel, i.e. its ability to conductcurrent, is changed by a single gate in a normal field effecttransistor. In a dual-gate transistor, the channel is changed by a firstbottom gate B and a second top gate T. The gates are located ondifferent sides of the channel. In the embodiment shown, the top gate(upper gate) provides the additional rear side contact or back gatecontact.

FIG. 5B shows two top views of the dual-gate transistor as shown in FIG.5A. As shown in the left-hand illustration, a power line can becontrolled by a left source area S and a right drain area D via top gateT and/or bottom gate B. The right-hand illustration in FIG. 5B shows asection of the arrangement shown in FIG. 5A.

FIG. 5C shows an illustration of the dependence of a threshold voltageon a top-gate voltage V_(TG) and thus the interaction of a back contactwith the threshold voltage V_(TH). The threshold voltage VTH is inparticular the gate-source voltage V_(GS), with which the field effecttransistor becomes conductive. FIG. 5C shows the x-axis, thevoltage_(VTG) applied to a top gate T. As a function of this, the y-axisshows the threshold voltage VTH for changing the conductivity of thechannel of the controlled NMOS field effect transistor. For example, atop gate voltage of 0 V provided a threshold voltage of 0.5 V forcurrent conduction. By means of the additional top gate of the insulatedGate ZO NMOS transistor, the threshold voltage V_(TH) of the transistorcan be shifted almost linearly over a wide range.

FIG. 6 shows a first embodiment of a device for electronic control of aμ-LED, in particular a pixel or subpixel for a display. The μ-LED can bemanufactured using the various technologies shown. These includemonolithic production, but also the arrangement in bar form, withcurrent constriction or with the antenna structure disclosed in here.Decoupling structures can be provided to direct the light.

The μ-LED is connected in series with a dual-gate transistor between afirst potential GND and a second potential Vdd. The arrangementcomprises a threshold line PWM, which is connected to the first controlgate or the back-gate BG of the dual-gate transistor T2. This has anadditional control electrode. This backgate BG with a rear contact isshown in FIG. 5A and FIG. 5B. As shown in FIG. 5C, the threshold voltagecan be shifted significantly via the back contact, i.e. the outputcurrent can be modulated by means of the additional gate BG while thevoltage U_(GS) between gate G and source S remains constant. Inprinciple, Gate G and Backgate BG can also be used in reverse. Thismeans that the current setting can be carried out by means of the firstcontrol terminal BG and the pulse width modulation by means of thesecond gate G. By means of the wide dynamic range provided by thecircuit, the threshold voltage can be shifted into ranges that lead to asafe switch-off of the second transistor T2.

This enables pulse width modulation (PWM) operation.

Another advantage is the speed of the proposed circuit using thedual-gate transistor T2. A fast switching can be carried out. Since, incontrast to modulation via the “Data” line, no memory capacity is used,modulation can be performed much faster with the same driverperformance.

Furthermore, the device comprises a data signal line data and aselection signal line sel. Finally, the device also contains a selectionhold circuit with a charge storage Cs and a control transistor T1. Thecharge accumulator is arranged between a second control gate G of thedual-gate transistor T2 and a connection of the μ-LED. The controlterminal of the control transistor T1 is connected to selection signalline Sel. During operation, a date “data” is impressed on the datasignal line via the selection signal line on gate G of the dual-gatetransistor T2. The voltage U_(GS) is stored in capacitor Cs and is stillpresent even after switching off selection transistor T1. The voltage isgiven by the data signal, whereby addressing is done by means of theselection signal Sel.

Gate G thus creates a fixed channel and thus a constant current throughthe current path. In this way a constant current source is provided bytransistor T2, which is additionally pulse width modulated by a PWMsignal at the back gate of transistor T2. The μ-LED thus switches by thePWM signal between a current given by the date in the charge storage andthe state “off”.

Since the μ-LED in some embodiments comprises a slight dependency of thecolor by the impressed current, the color can be impressed to a smallextent by the data signal and the intensity by the PWM signal. If thecolor dependence is low, the intensity can be adjusted via the date evenwith a fixed PWM.

FIG. 6 shows a pulse width modulation of an adjustable constant currentsource with an NMOS TFT (Thin Film) transistor T2 without GND-basedprogramming. However, this version is not temperature stabilized. Thetemperature instability results from the fact that the voltage acrossthe charge storage Cs varies slightly due to the temperature dependenceof the voltage drop across the LED.

FIG. 7 shows a second embodiment of a device for electronic control of aμ-LED pixel cell, provided in NMOS technology. Similar to the previousdesign, the current path includes a μ-LED and a dual-gate transistor T2connected in series between the first potential terminal GND and thesecond terminal Vdd. The charge memory Cs of the selection signalholding circuit comprises one terminal connected to the gate G oftransistor T2 and its other terminal connected between source S andfirst potential GND. As a result, the voltage across the chargeaccumulator Cs remains constant and is no longer dependent on theforward voltage of the light emitting diodes and thus no longer sodependent on temperature. The selection signal holding circuit isprogrammed via GND.

On the other side the μ-LED is connected between the drain connection Dand the supply potential Vdd. Thus, the μ-LED is located on the side ofthe second potential connection Vdd, which provides the electricallyhigher potential. The arrangement is similar to FIG. 6, but the μ-LED isnot located on the low side, i.e. not with the cathode connected to GND(ground), but on the high side or upper side of transistor T2. Thus, thecathode of the micro light emitting diode is connected to the drain oftransistor T2 and its anode to the second potential connection Vdd.Correspondingly, the μ-LED shows, for example, a common anode topologyinstead of a previous “common cathode”.

FIG. 8 shows a third embodiment of a device, an embodiment shown in FIG.6, but now implemented using PMOS thin-film transistors instead of NMOSthin-film transistors (TFT). Only PMOS transistors are used. In thisembodiment, the charge memory is connected between the source of thedual-gate transistor T2 and the first potential Vdd.

The embodiments shown in FIGS. 6 to 8 allow classic control in a pixelmatrix. The “front gate” (normal) gate G of transistor T2 is describedwith a voltage value Data, the holding capacitor Cs stores this voltagevalue and controls the second transistor T2 accordingly. This is used,for example, to set a color mixture in an RGB pixel. A pulse widthmodulation (PWM) voltage is now applied to the second transistor T2 viathe backgate BG. This voltage modulates the micro light emitting diodecurrent in time via pulse width modulation (PWM) and is used, forexample, to change the general brightness of a pixel with a previouslyprogrammed color. The color is programmed in advance via the firsttransistor T1 and the capacitor Cs. The same pulse width modulationsignal can also be applied to all transistors of a display line, forexample, to the respective backgate. Thus, a whole line is “dimmed”.

It is also possible that all back gates of a complete display, i.e. allcolumns and all rows, are driven by a common pulse width modulationsignal PWM, so that the complete display is “dimmed” without changingits picture content. This can be used, for example, for a day-night modefor a display in a car or for glasses on Augment Reality applications.In this way, the brightness can be adjusted dynamically and continuouslyto an external brightness. In the automotive sector, parts of a displaymay also be individually controllable in this way, allowing dark areasto be brightened and lighter areas to be darkened.

FIG. 9 shows a third embodiment of a device, namely a further design ofa control device. In addition to the representation and device shown inFIG. 6, a third transistor T3 is connected in parallel to the μ-LED, thecontrol terminal of the third transistor T3 being connected to theselection signal line Sel. The transistor T2 as constant current sourceis here designed with only one gate. By means of such an arrangement,programming can be performed independently of the anode potential of theμ-LED. The device shown here results from a combination of NMOS-basedIGZO processes and the requirement of a common cathode from processtechnology with regard to an assembly of μ-LEDs. On this basis animplementation of a 2T1C (two transistors and one capacitance) currentsource is possible.

If a high potential Vdd is applied to the selection signal line Sel, thefirst transistor T1 is connected to the data signal line Vdata, inaddition the third transistor T3 becomes conductive, bridging the LEDand connecting capacitor C to reference potential (GND). In this way,the capacitor is programmed with the voltage Vdata, referenced to thereference potential GND of the lower, first potential connection and notto the anode potential of the μ-LED. If the potential of the selectionsignal line Sel is at the reference potential (GND), the firsttransistor T1 and the third transistor T3 are blocked, so that thecapacitor C maintains its previously programmed voltage, whichcorresponds to the gate-source voltage U_(GS) of the second transistorT2. If the anode potential shifts, the separation of Vdata also shiftsthe gate potential to the second transistor T2, so that the gate-sourcevoltage U_(GS) of transistor T2 remains constant. In this way, thesecond transistor T2 can operate as a current source.

FIG. 10 shows a fourth example of a device, in the form of a subpixelcell. FIG. 10 shows an arrangement as shown in FIG. 9 with thedifference that the second transistor T2 here is designed as a dual-gatetransistor whose additional gate terminal BG is connected to a thresholdline PWM for applying pulse width modulation. The front gate G isconnected to the charge storage C, the back gate BG is fed with thepulse width modulated signal.

The transistors T1 to T3 in combination with the holding capacitor C1form a 3T1C cell in NMOS configuration. The 2T1C cell consisting oftransistor T1 and transistor T2 can also be designed as a PMOSconfiguration. In this case, for example, the third transistor T3 is notrequired. Transistor T2 is configured as a so-called “dual-gatetransistor”.

FIG. 11 shows an illustration of an example of a device with additionaltemperature stabilization. The transistors T1 and T2 in combination withthe holding capacitor C1 provide a 2T1C cell in NMOS configuration. TheLED is placed on the low side of transistor T2, since a “common cathode”is provided for process-related reasons. The T2 is designed as a“dual-gate transistor” and thus comprises two control electrodes.Similar to some previous examples, the gate (corresponding to the bottomgate in FIG. 5A) of the dual-gate transistor T2 is also part of thetopology of the 2T1C cell in this embodiment and provides the color andgeneral brightness of the μ-LED via the ground-related programming ofthe charge storage C1 and the signal on line Data1. Via the backgate BG(front gate of FIG. 5) a PWM signal can be applied to transistor T2,which acts as a current source. The gate-source voltage of transistor T2is thus dependent on the forward voltage of the LED. Since the voltagedrop across the LED depends on both the cross-current and thetemperature, the output current is considerably different from theactual expected value of the programming. This can be described by thefollowing equation 2:

I _(LED) =K(Udata−U _(LED)(T,I)−Uth)²  (2)

Here U_(data) is the voltage across the charge storage C1. When theμ-LED heats up by itself, its forward voltage decreases, which leads toan increase of the current through transistor T2. Due to the absence ofnegative feedback, a change in the operating parameters of the μ-LEDtherefore has a significant effect on the current and thus on thebrightness or color of the μ-LED.

Therefore a negative feedback is proposed, which exploits thefunctionality of transistor T2 as a dual-gate transistor and allowscompensation of such effects. The negative feedback comprises a holdingcapacitor C2, which is connected between the reference potential AVSSand a control terminal of a transistor T3. The first terminal of thiscapacitor forms the control for the backgate BG of the dual-gatetransistor T2 and the other terminal is connected to the source S of thedual-gate transistor T2. The negative feedback comprises a furthertransistor T4, whose control and drain terminals are connected to thesupply potential AVDD. Its source terminal is connected to the backgateBG and the drain of transistor T3. Finally, a fifth transistor T5 isprovided for optional programming of a compensation, which stores acompensation value on line Data 2 in the holding capacitor C2 on thebasis of a selection signal Set2.

The gate-source voltage of transistor T3 corresponds to the voltage ofholding capacitor C2 minus the forward voltage of the LED. If thisforward voltage Vf_LED increases, the gate-source voltage U_(GS) of thethird transistor T3 decreases, since the stored charge on the capacitorC2 remains the same. Thus, the current through the third transistor T3decreases. Since this current also flows through transistor T4, thecoupling of its gate to the supply potential results in a smallervoltage drop U_(DS) via the fourth transistor T4. This results in ahigher voltage at the node to the back gate of transistor T2. This inturn results in a lower threshold voltage at transistor T2. By means ofan appropriate design of the transistors T3 and T4 according to thefollowing equation 3

$\begin{matrix}{{\beta = {{- \sqrt{\frac{W_{4} \cdot L_{3}}{W_{3} \cdot L_{4}}}}\mspace{20mu}{whereat}}}{{U_{{th}^{*}}\mspace{11mu} I_{T\; 2}} = {{U_{th}\mspace{14mu}{U_{th}}^{*}\mspace{11mu} I_{{Nom}^{*}}} + {\beta \cdot U_{{BG} - s^{*}}} - S}}} & (3)\end{matrix}$

an almost complete compensation of the described feedback effect of theforward voltage of the LEDs can be achieved. Typical values for β=−0.52this results in W₃=3.69·W₄· with L₃=L₄=L_(min).

The fifth transistor T5 and the capacitance C2 can be used to fine-tunethe pixel cell Data2 including the feedback. As shown in FIG. 11, asignificant improvement of the current stability is achieved withoutcomplex pre-calculation. The compensation of the current instability isachieved with few components and without complex precalculation of the“Data” signal. This allows temperature fluctuations during operation tobe compensated. Furthermore, a reduction of the quiescent current causedby the third transistor T3 can be achieved by the additional controlinput Data2 via Sel2.

FIG. 12 shows a fifth embodiment of a μ-LED control device. As in theprevious examples, the μ-LED can be part of a display or a module. Inaddition to the design as shown in FIG. 6, further changes have beenmade to the temperature compensation and influence of the forwardvoltage through the μ-LED.

The embodiment comprises a third electronic switch T3 with a first powerline contact connected to the second terminal of the μ-LED, and a secondpower line contact of the third electronic switch T3 connected to thefirst control terminal BG of the second electronic switch T2. The devicealso includes a fourth electronic switch T4. A control terminal of thethird electronic switch T3 is connected to a second power line contactof the fourth electronic switch T4, which are connected in common to thesupply potential AVDD. A control terminal of the fourth electronicswitch T4 is also connected to the supply potential AVDD. Finally, thefourth electronic switch T4 has its first power line contact connectedto the second power line contact of the third electronic switch T3.

A fifth electronic switch T5 is provided to control the secondelectronic switch T2 via the first control connection BG. This isconnected in parallel to the μ-LED. It is also connected by its secondpower line contact to the first power line contact of the thirdelectronic switch T3. The control terminal of the fifth electronicswitch T5 is electrically connected to a terminal for supplying a pulsewidth modulation signal PWM.

The behaviour and function of the device shown in FIG. 12 is similar tothe device shown in FIG. 11, but unlike FIG. 11, the gate of the thirdtransistor T3 is electrically connected to a fixed electrical potentialVdd. As an option, an additional fifth transistor T5 can be provided forsafe switching off the LED without a cross current from the thirdtransistor T3. A fifth transistor T5 is not necessary if a cross currentfrom the third transistor T3 into the μ-LED is not a problem. Accordingto the device presented here, the pulse width modulation PWM iscontrolled without a holding capacitor. In this way, a possible pulsewidth modulation resolution can be increased with the same cycle time.Likewise a recharging of a storage capacitor is not necessary, whichincreases the switching speed.

A further aspect concerns in the following a control for a brightnessadjustment or a dimming of pixels, or of the assigned μ-LEDs. Suchdimming is not only frequently used in the automotive sector, forexample to switch between day and night vision, but also in ARapplications. Basically, such dimming can be useful and advantageouswhen contrasts have to be adjusted or when external light makes itnecessary to control the brightness of a display in order to avoiddazzling a user or to show information reliably.

Conventionally, this problem can be addressed with PWM control andcurrent dimming, but external parameters of the LED often change, whichrequires complex compensation circuits. Alternatively, so-called 2T1Ccircuits can be used, to which the control signal for driver control isfed and stored in a capacitor.

The brightness is then adjusted by the voltage applied to the capacitor.The invention now makes use of an aspect, which often occurs rather as aparasitic undesired effect, namely the gate-source capacitance of thedriver transistor. This forms a capacitive voltage divider with thecapacitance of the capacitor, so that the voltage at the gate of thetransistor drops. If the gate-source capacitance is selectedappropriately, the brightness can be adjusted over a wider range.

In one aspect, a control circuit for adjusting a brightness of at leastone μ-LED comprises a current driver element with a control terminal.This is connected in series with the μ-LED and has its first terminalconnected to a first potential. A charge accumulator is arranged betweenthe control terminal and the first potential and forms a capacitivevoltage divider with a defined capacity between the control terminal andthe first terminal.

According to the invention, a control element is now provided whichprovides a control signal to the control terminal during an initialperiod of time, on the basis of which a current flowing through the atleast one μ-LED can be adjusted during the initial, first period oftime. During a second time period following the first time period, thecurrent flowing through the μ-LED is now determined by a reduced controlsignal resulting from the control signal during the first time periodand the capacitive voltage divider.

Thus, when the control signal is selected by the control element, thebrightness of the μ-LED can be adjusted so that it depends eithersubstantially on the current during the first time period or the currentthrough the LED during the subsequent second time period.

In other words, the control signal determines the total current throughthe μ-LED during the first and second time periods and, if the controlsignal is appropriately selected, depends substantially on the currentflowing through the μ-LED during the first time period or on the currentflowing through the μ-LED during the second time period.

Thus the control element is set up to provide a first or a secondcontrol signal during the first time period in order to operate theμ-LED at at least two different brightness levels during the entire timeperiod. For this purpose, for example, the second control signal islarger than the first control signal, so that the reduced control signalderived from the second control signal is sufficient to drive thecurrent driver and thus provide a current sufficient to operate theμ-LED.

As mentioned, the current driver element may include a field effecttransistor whose gate forms the control terminal and has a gate-sourcecapacitance specified by design. Accordingly, during the second timeperiod, the reduced control signal applied to the control terminal ofthe transistor or current driver results from the control signal duringthe first time period and the ratio of a charge storage capacity and thesum of the charge storage capacity and the defined capacity.

Such a circuit is operated at a certain frequency, so that first andsecond time periods follow each other periodically. This frequency canbe 60 Hz, often also 100 Hz or 120 Hz, or can be in the range of 60 Hzto 150 Hz. In one aspect, the control element is configured to make aratio of the second time span to the first time span adjustable, wherebythe ratio can be in the range from 300:1 to 100:1, in particular in therange from 100:1. For this purpose, the control element comprises acontrol transistor at whose control terminal the first and second timespan and thus the duty cycle can be set by means of a signal.

A brightness level can now be selected by means of various controlsignals during the first time period of a period. For this purpose, itis provided in one aspect to operate the μ-LED at a first, darkerbrightness level if a voltage of the first control signal is within afirst voltage interval, and to operate the μ-LED at at least a second,brighter brightness level if a voltage of the second voltage signal iswithin a second voltage interval which is at least partly above thefirst voltage interval.

In this context, the brightness is determined by the current flowingthrough the μ-LED during the whole time period. With a control signalthat lies within the first voltage interval, the total current isessentially determined by the current during the first time period,since due to the capacitive voltage divider and the associated drop in avoltage of the reduced control signal during the second time period, thecurrent through the LED during this time period is very small and notsufficient or relevant for operation. The current driver is not or onlyvery slightly driven during this time period, the LED is hardly or notat all lit.

In contrast, the total current over a period is substantially determinedby the current during the second period if the control signal during thefirst period is within the second voltage interval. In this case,despite the capacitive voltage divider and the associated drop in avoltage of the reduced control signal during the second time interval,the current driver is still sufficiently driven so that a sufficientlyhigh current flows through the μ-LED to operate it. Typical possiblevalues for the first voltage interval range from 1.3 V to 4.5 V. Thesecond voltage interval ranges from 4.0 V to 10.0 V.

A further aspect concerns a method for adjusting a brightness of atleast one μ-LED connected to a current driver element with a controlterminal, the first terminal of which is connected to a first potentialand in which a capacitor is connected between the control terminal andthe first potential so that it forms a capacitive voltage divider with adefined capacitance between the control terminal and the first terminal.In the method, a control signal is applied to the control terminalduring a first time period, whereby a current flowing through the atleast one μ-LED is adjusted during the first time period. During thesecond period following the first period, the control signal is turnedoff, whereby the current flowing through the μ-LED is set by a reducedcontrol signal resulting from the control signal during the first periodand the capacitive voltage divider. “Switching off the control signal”here means disconnecting the control signal from the control terminal sothat only a reduced signal acts on the control terminal thereafter,resulting from the control signal during the first time period and thecapacitive voltage divider.

This reduced control signal is thus smaller than the control signal bythe ratio of the capacitive voltage divider. Specifically, in oneaspect, the reduced signal applied to the control terminal during thesecond time period results from the control signal during the first timeperiod from the ratio of a capacity of the capacitor and the sum of thecapacity of the capacitor and the defined capacity.

At this point a further aspect should be mentioned, namely that a ratioof the second time period to the first time period is in the range of300:1 to 100:1, in particular in the range of 100:1. In another aspect,it is proposed to operate the μ-LED at a first, darker brightness levelif a voltage of the first control signal is within a first voltageinterval, and to operate the μ-LED at at least a second, brighterbrightness level if a voltage of second voltage signal is within asecond voltage interval that is at least partially above the firstvoltage interval.

In this context, the proposed method determines the brightness by thecurrent flowing through the μ-LED during the entire time period. For acontrol signal that is within the first voltage interval, the totalcurrent is essentially determined by the current during the first timeperiod, since due to the capacitive voltage divider and the associateddrop in voltage during the second time period, the current through theLED during this time period is very small. The current driver is not oronly very slightly driven during this time period.

On the other hand, the total current is essentially determined by thecurrent during the second time period if the control signal during thefirst time period is within the second voltage interval. In this case,despite the capacitive voltage divider and the associated drop in avoltage of the control signal during the second time interval, thecurrent driver is still sufficiently driven so that a sufficiently highcurrent flows through the μ-LED to operate it. Typical possible valuesfor the first voltage interval range from 1.3 V to 4.5 V. The secondvoltage interval ranges from 4.0 V to 10.0 V.

The first or second control signal required for control can be obtainedfrom a digital control word by digital/analogeue conversion. The digitalcontrol word comprises a number of n bits for this purpose. The leastsignificant m bits (M<n, e.g. m=n−2 bits) correspond to the firstcontrol signal, i.e. the most significant bits are 0. In other words, nbits correspond to the second control signal. In another aspect, themost significant bits are used for coarse brightness adjustment, theleast significant bits for more precise range adjustment.

FIG. 21A shows a control circuit for a lighting unit 1, which comprisestwo μ-LEDs 4 as illuminates. From the basic design, the control circuitcan be implemented in a 2T1C architecture as shown here. However, otherarchitectures are also conceivable.

Even if two μ-LEDs 4 are provided according to the shown design form inorder to ensure redundancy with respect to light generation, it isgenerally irrelevant for the realization of the invention whether oneμ-LED 4 or a plurality of μ-LEDs 4 are used as illuminates. For example,the light unit 1 or the μ-LEDs 4 can be a light unit or LEDs of onecolor of one pixel.

In the embodiment shown in FIG. 21A, the two μ-LEDs 4 connected inparallel are each supplied with the electrical energy required to excitea light emission via a current driving transistor 6. In addition to onetransistor 6 for each μ-LED, a common current source can also beprovided for both μ-LEDs 4. Current driving transistor 6 is connected inseries with μ-LED 4 between supply potential terminal 2 and referencepotential terminal 2 a. Supply potential connection 2 provides theelectrical energy or voltage required for the operation of lighting unit1.

A capacitor, which stores the brightness value, is connected between thegate of the current-driving transistors 6 and the reference potentialconnection 2 a. Together with the control transistor 7 it forms a 2T1Ccell. A pulse signal is applied to its gate, which applies a controlsignal 8 from the other terminal of transistor 7 to the control terminalof current driving transistor 6.

For operation according to the proposed concept in a circuit accordingto FIG. 21A, a pulse signal is now applied to the gate of transistor 7.For example, the duty cycle On/Off can be 200:1, i.e. at a repetitionfrequency of 60 Hz the ON pulse duration is approx. 50 μs while the Offpulse duration is approx. 16.6 ms.

Within a period, the control transistor is now closed via the pulsesignal for a first period (ON pulse duration), and the controltransistor is opened again in a second period (OFF pulse duration).During the first period, the control signal 8 is thus applied to thecontrol terminal of the current driver transistor 6 and via thecapacitor 3. The control signal controls the current driver transistor 6and a current caused by the control signal 8 flows through the μ-LED. Atthe same time, a charge is applied to the capacitor until the voltage ofthe control signal is established across the capacitor (referred to thepotential at terminal 2 a).

After the first time period, control transistor 7 is opened again. Thevoltage of control signal 8 is now stored in the capacitor and shouldcontinue to drive the current driver transistor. In practice, however,this is not the case, since in the second time period, a capacitivevoltage divider is formed, which consists of the capacitance of thestorage capacitor 3 and the capacitance formed by the gate and source oftransistor 7. This regularly causes the effective voltage 9 on capacitor3 to be lowered by a discrete value. The reduced effective voltage 9results from the voltage of the control signal multiplied by C1/C1+Cp,where C1 is the capacitor capacitance and Cp is the gate-sourcecapacitance. Thus, compared to the first time period, a slightly smallercontrol signal 9 (or slightly lower voltage) is applied to the drivertransistor 6, so that a current of lower intensity flows through theμ-LEDs 4. The brightness of LEDs 4 thus decreases slightly during thesecond period of a period. However, this is not noticed by an observer,since only the average light output available in relation to the periodis decisive for the perception of brightness.

Thus, for an entire period, control signal 8 is applied to the controlterminal during the first period and the reduced control signal 9 duringthe second period. At a frequency of 60 Hz, this would be 0.05 ms to0.06 ms for the first time period and approximately 16.6 ms for thesecond time period. In terms of the average light output of the μ-LED,this means that light emitted by the μ-LED during the second time periodhas a comparatively high proportion of the average light output of theμ-LED during one period.

This is equivalent to the average current through the μ-LED. The currentflowing through the μ-LED during the second period has a relatively highshare of the average current during the whole period.

It follows from this that if a low voltage is selected for controlsignal 8, the total current flowing through the LEDs 4 during oneperiod, and thus the average light output, is determined decisively bythe strength of the current flowing through the LEDs 4, while controlsignal 8 is applied during the first period. If a low voltage value isselected for control signal 8, lighting unit 1 can therefore be operatedat a low brightness level and dimmed as required within this lowbrightness range.

If, on the other hand, a high voltage is selected for the first voltagesignal 8, for example 8V, the total current flowing through the LEDduring one period is largely determined by the current during the secondperiod of the period in which the reduced control signal 9 is applied tothe current driver transistor 6. If a high control signal 8 is selected,i.e. a higher voltage, the lighting unit 1 is operated at a highbrightness level and can be dimmed as required at this brightness level.

During the second period of the period in which the reduced controlsignal 9 is applied to the lighting unit, a current greater than 1 μAstill flows through the LED in this operating state, so thatparticularly effective operation of LEDs 4 is possible.

FIG. 21B is a supplement to this embodiment where the proposed circuitis implemented in a backplane substrate. Contact areas are provided onthe backplane substrate to which a μ-LED module is attached. Thiscomprises two μ-LED base modules as disclosed in this application, forexample in FIG. 184. The two contacts 26 are each connected to a currentdriver transistor 6. The two outer contacts 25 of the μ-LED Module areconnected to the ground or reference potential connection. The currentdriver transistor is adequately dimensioned. In some aspects this may bethe dual-gate transistor disclosed here, as described in FIGS. 5 to 12.

Furthermore, a photonic crystal 32 is incorporated in the μ-LED module.This extends to just above the active layer 20 and changes the emissionproperties there, for example in the area above the active layer, whereit can have an emission-promoting effect.

FIG. 22 shows a graph showing the strength of the current flowingthrough the LEDs 4 as a function of the voltage of control signal 8 andthe reduced control signal 9. It can be clearly seen that when a controlsignal 8 with a voltage value of about 1V to 3V is applied during thefirst time period, the current flowing through the μ-LEDs 4 is largelydetermined by the first voltage signal 8 applied during the firstperiod. Meanwhile, in the second time period, the control signal 9,which is reduced by the capacitive voltage divider, and thus the currentflowing through the μ-LEDs 4 is almost zero.

Only from a voltage of the control signal of about 3.0 V during thefirst time period does the voltage of the reduced control signal 9increase and thus also the strength of the current flowing through theμ-LEDs 4 during the second phase.

It must be taken into account in each case that due to the differentlength of the two phases of a period, namely a short first phase inwhich the control signal 8 is applied to the lighting unit 1, and a longsecond phase in which the reduced control signal 9 is applied to thecurrent driver transistor 6, the influence of the second time period onthe average light output of the μ-LEDs 4 is significantly greater. As aresult, the total current through the μ-LED increases significantlyduring a period when the voltages of control signal 8 exceed 3.0 V. Itfollows from this that in the case of a control signal with acomparatively high voltage greater than 3.0 V or 3.5 V, the proportionof the total current flowing through the μ-LEDs 4 during one period isdetermined to a large extent by the proportion of the current during thesecond time period.

In addition, FIG. 23 shows a schematic representation of the time courseof the control signals 8, 9 and the resulting light spot 10 when acontrol signal 8 is applied with a comparatively high voltage. Thecontrol signal 8, which is transmitted to the lighting unit, has avoltage of 10 V in the embodiment shown. Otherwise, the voltage of thereduced control signal 9, which is applied to the lighting unit duringthe second phase, is reduced but still has a voltage that issignificantly higher than 0 V. Due to such a voltage curve of thecontrol signals 8, 9, a bright light spot 10 is formed, the lightingunit is thus operated at a high brightness level.

FIG. 24 illustrates an operating condition in which a control signal 8is applied to the lighting unit at a comparatively low voltage, in thiscase 2.0 V. The reduced control signal 9 in this case has a voltage ofat least almost 0 V. The brightness of the light spot 10, which isdetermined by the average light output of the lighting unit 10 during aperiod, is significantly lower than in the operating state shown in FIG.23. The lighting unit and the LEDs used for it are thus operated at acomparatively low brightness level at which they can be dimmed asrequired.

Finally, FIG. 25 shows in a graphical representation how the electricalenergy conducted through the LEDs during a period, sometimes referred toas the amount of current, behaves in relation to the voltage signalsapplied to a lighting unit during the first and second periods of aperiod. The x-axis is the voltage during the first period, the y-axisthe current during a period.

It can be seen that when a control signal with a comparatively lowvoltage is applied, especially a voltage of up to about 3V, the totalcurrent flowing through the LEDs is caused by this control signal. Onlywhen control signals with voltages higher than 3V are applied does thevoltage of the reduced control signal also increase. Above all, in thisoperating state, a current flows through the μ-LEDs of the lighting unitwhich, due to the length of the second time period, has a considerableinfluence on the amount of the total current flowing through the LEDsduring the period and thus on the average light output or brightness ofa lighting unit with at least one μ-LED.

Furthermore, FIG. 25 shows that a lighting unit controlled in this waycan be operated at two different brightness levels depending on thevoltage selected for the control signal. At the two brightness levels itis in turn possible to continuously vary the brightness of the lightingunit within a dimming range limited by a lower and an upper voltagevalue for the control signal. The course of the two characteristiccurves shown in FIG. 25 can be adapted to suit requirements with the aidof a suitable circuit design, in particular by specifically defining thecapacitance of the capacitor and the gate-source capacitance of thetransistor used as the switching element. It is also conceivable todetermine the voltage levels, the control signal and the reduced controlsignal by suitable selection and dimensioning of the electroniccomponents used.

As the embodiments explained show, the control circuitry designed inaccordance with the invention enables the operation of a lighting unit,which has at least one μLED, on at least two brightness levels in acomparatively simple manner. The main consideration here is that,depending on the level of the voltage of the control signal, either thecurrent flowing through the LED during the first time period or thesecond time period of a period is decisive for the total current flowingthrough the LED as well as for the average light output and thebrightness of the μ-LED perceptible by an observer.

Another aspect deals with the question of how a retroactive effect onthe control of a current source can be reduced when PWM control is used.In pulse width modulation, the current source is switched on and off inrapid succession for contrast and brightness adjustment. The frequencyis several 100 kHz up to the MHz range. With control loops within thecurrent source, the switching operations lead to spikes or otherbehaviour, which can bring the control loop out of its control range.

FIG. 26 shows a schematic block diagram for a regulated current sourcefor μ-LEDs, which remains stable even during switching operations. Thiscurrent source can be used in μ-displays or other display devices and issuitable for automotive and augmented reality applications.

The supply circuit includes a reference branch 10, which provides areference signal and in particular a reference current or, if necessary,a reference voltage. In the following, all further supply currents and,if necessary, also voltages are derived from the reference signal.Further reference signals can also be generated from this signal. Thereference signal, i.e. the reference current is characterized by a hightemperature stability but also a stability against process fluctuationsduring production. If necessary, it can include one or more correctioncircuits, which together provide an accurate and stable referencesignal, for example a reference current.

In the present case, reference branch 10 is connected to a referenceinput 22 of an error correction detector 20 as well as to a controllablesupply source 30. In addition to the reference input, the errorcorrection detector 20 also comprises an error signal input 23 and acorrection signal output 21. The detector 20 is designed to compare anerror signal at input 23 with a reference signal at input 22 or a signalderived therefrom and to generate a correction signal at its output 21.

The controllable supply source 30 has a controllable current source,which is not shown separately in this block diagram. In addition, thesupply source includes a second backup source 40, which provides afeedback signal to the error detector in one operating state of thecircuit. A switch device 70 is provided for this purpose, which,depending on the operating state, i.e. an operating signal at input 74,either switches the current source to the load or disconnects it fromthe load and switches on the substitute source 40. In this way, either asignal from the current source to the consumer or the signal from thereplacement source is detected at detector 50.

A current-voltage converter or a voltage drop detector can be used fordetection. A voltage or a voltage drop or a current can be detected withdetector 50. The detected signal is then fed back to the errorcorrection detector 20 and compared with the reference signal or asignal derived from it. The resulting error correction signal is used toadapt the controllable current source. If load 60 is now supplied bycurrent source 30, error correction detector 20 adjusts the currentthrough the load to a value defined by the reference signal. With aμ-LED, the current flowing through the diode can thus be preciselyadjusted. If the voltage drop across the load or the current through theload changes due to temperature effects, the error correction detectorreadjusts the current accordingly. This part of the circuit and itsoperation corresponds to a control loop.

If the load were now disconnected from the current, for example if theLED is switched off in the case of PWM modulation, the control loopwould first attempt to readjust, but then run out of the control range.For this reason, the invention provides for a substitute signal to besupplied to the error correction detector 20. This signal is essentiallythe same or at least very similar to the nominal signal when the load isswitched on. Thus, the error correction detector 20 is operated in itsoptimum range regardless of the operating state of the load and thecontrol loop is not moved out of its control range. This results in veryfast control and prevents detector 20 from falling outside its controlrange.

The proposed supply circuit thus includes a correction circuit as partof a control loop for high-precision control of a current or voltagesource as well as a substitute source. The correction circuit is now fedeither a signal derived from the current or voltage source or the signalof the substitute source. The supply of the latter enables the currentsource to be switched off without the control loop running out of itscontrol range.

FIG. 27 shows a specific embodiment for driving a power source for asupply of a Light Emitting Diode 60, which is part of a pixel matrix notshown here, for example a display, video wall or other applicationrequiring a high-precision power supply. In the case of light-emittingdiodes, a current through the diode also changes with changingtemperatures, which can lead to a change in brightness as well as achange in color temperature. This effect is compensated by regulatingthe current source. Displays, pixel matrices for picture or videoapplications are often operated with pulse width modulation, in whichthe light emitting diodes are switched on and off at high frequencies.The ratio between the two states gives the brightness of the respectivelight emitting diode.

The power supply circuit shown in the following is essentially designedin MOS circuit technology. Some field effect transistors are of then-type, others of the p-type as shown. In this case the supply circuitis connected between supply potential VDD and consumer. By exchangingthe channel types of the field effect transistors and an arrangementbetween consumer and reference or ground potential VG an alternativeembodiment is created. It is also possible to replace individualtransistors with bipolar transistors, or to form assemblies such ascurrent mirrors with them. Bandgap references can be used to generateprecise voltages, which then provide a current via a converter.

Supply circuit comprises a combined reference branch 10 consisting oftwo parts 10 a and 10 b, which provide a reference current. They formpart of a current mirror. The reference branch 10 a for a firstreference current comprises two transistors connected in series, ann-field effect transistor 12 a and a p-field effect transistor 11 a. Theformer is connected to a supply terminal, the latter to the referencepotential. The gate of the transistor 12 a is connected to the drainterminal and thus impresses a constant current. Transistor 11 a reflectsthe current through the reference branch into the four series-connectedtransistors 24, which form the fixed current source for a differentialamplifier. The differential amplifier forms a component of the errorcorrection detector 20 and contains, in addition to the current sourcefrom the transistors 24, an inverting and a non-inverting inputtransistor in each branch, which is connected to the supply potentialVDD via a further current mirror 26 consisting of two p transistors. Thenon-inverting input transistor 27 forms the reference signal input 22,the inverting transistor 28 leads to the error signal input 21. The twotransistors comprise the same dimensions as the transistors of mirror 26in this embodiment. However, different amplification factors may beprovided for in versions due to geometric dimensions such as channelwidth or length. This may be necessary if, as described below, there isalso an inherent factor between the error signal and the referencesignal. Such an inherent factor results from the design of the currentsource and the signals (error signal and reference signal) tapped forthe detector 20 as described below

The controllable current source 30 comprises a current mirror with anoutput branch and a reference branch, which simultaneously forms thereplacement source 40. The reference source 10 b is connected to areference branch input 32. This input 32 is also connected to thenon-inverting transistor 27 and to the reference signal input of theerror correction detector 20. The reference branch of the current mirroris thus impressed with an exact current, whereby a defined voltage dropis fed through the central tap to input 22 of the error detector. Thereference branch 10 b comprises two series-connected transistors foradjusting the current flow through the reference branch of the currentmirror of the current source 30 and for defining the reference voltageor reference signal at input 22. The gate of transistor 101 is connectedto the gate of transistor 11 a (but not drawn here) and is thus part ofthe current mirror of reference source 10. The controllable currentsource 30 comprises a supply input to which the supply potential VDD isapplied and a p-type current mirror transistor 34. A capacitor isconnected between gate and terminal 32, so that the voltage in thereference branch is coupled to the gate. This voltage also forms thereference signal for the error detector.

The reason for using a capacitor with positive feedback instead of theusual conduction for current mirrors is, among other things, due to anadditional frequency compensation for the additional control signalterminal 31, which connects the gate of transistor 35 with the errorcorrection output 21 of detector 20. The error correction signal is thusalso fed to the gate.

The gate of the transistor is also connected to the gate of an outputtransistor 36 via a switching device 70. This is located between supplypotential VDD and output. The current of the reference branch is thusmirrored into the output branch 37 of the current source. Bydimensioning the two transistors 34 and 36 accordingly, the ratio of theoutput current to the current through the branch with transistor 34 canbe adjusted accordingly. If, for example, the channel width of outputtransistor 36 is 10 times that of transistor 34, then the current isalso increased by the same factor in simple approximation. In theillustration in FIG. 27, the output transistor 36 is a singletransistor. However, it can also be designed as several transistorsarranged in parallel.

The switching device 70 in the current source 30 is configured toconnect, depending on a signal, the gate of the output transistor 36either to a fixed potential, here the supply potential, or to the gateof the current mirror transistor 34. In the former case, the outputtransistor 36 is de-energized, since the potential VDD blocks the gateof the p-type transistor. Since in this case the transistor does notconduct current, it is also referred to as transistor 36 is open. In thesecond case, the output transistor 36 is closed and the current throughthe current mirror transistor 34 is mirrored into the output with theabove-mentioned factor and led to LED 60.

The output of the current source 30 is connected to the load 60 or theLED as well as to a second switching device 70, which applies either thevoltage at the output of the current source to the error signal input ofthe error detector 20, or a substitute signal. This is provided by thesubstitute source 40, which is formed by a p-type output transistor 41and a transistor 43 connected in series. The series connection of thetwo transistors 41 and 43 is arranged between supply potential VDD andground potential VG. A central node 42 forms the output for thesubstitute signal. The gate of transistor 43 is connected to its drainterminal and thus to node 42. The gate of p-type output transistor 41 isconnected to the gate of transistor 34. Thus, a current mirror is alsoformed from the transistors 34 and 41. However, a different factor isselected here by appropriately dimensioning the output transistor 41 sothat the current through this branch is significantly lower than thatthrough the output branch.

The two switching devices 70 operate essentially synchronously and aredesigned so that the output of the current source 30 is connected to theerror signal input 23 of the detector 20 when the gate of transistor 36is connected to the gate of transistor 34. If, on the other hand, theoutput transistor of the current mirror is de-energized, the substitutesignal of the substitute source is present at the error signal input,i.e. tap 42 is connected to input 23.

In the version shown here, the spare source is always activated, i.e.the output transistor always forms a current mirror with transistor 34and a current flows through the branch of the spare source. In analternative version, a switch can also be provided here which works inthe opposite direction to the switching device 70, i.e. it switches thereplacement source currentless, for example, if a voltage is applied tothe load or a current is provided by the current source 30.

In an operation of the supply circuit, the switching device 70 is nowswitched in such a way that node 71 is connected to node 72 andsimultaneously the gates of the transistors 34 and 36 are connected toeach other. The current source then provides an output current for theload. This leads via LED 60 to a voltage drop of a few volts, forexample 2 to 3 volts. The voltage drop is detected as an error signal bythe differential amplifier of detector 20 and compared with thereference signal. If the current through the LED now changes, forexample due to a temperature change, the error signal also changes andthe detector generates a correction signal for the current mirror at thecorrection signal output 21 and feeds this to the control signalconnection 31.

The correction signal is now also applied to the gate of outputtransistor 36, so that the current is adjusted accordingly. The errordetector 20 controls the output current mirror so that the saturationvoltage of the inverting and non-inverting transistors 27 and 28 isequal. A load-independent current source is formed by means of the errorcorrection detector 20 and the current mirror connected to the output.

Since light emitting diodes are often operated with pulse widthmodulation, the current through the diode changes in defined intervals,i.e. the diode is switched on or off at high frequency. The pulse widthresults in the brightness of the diode 60, which is achieved by theswitching device 70 in the current mirror. However, if the current isswitched off, the error detector 20 counteracts this for the first time.This can cause it to run regularly out of its optimum dynamic range. Thesame happens when the current is switched on. Here the differentialamplifier needs some time to reach its normal control range. Inaddition, oscillations or overshooting can occur, which reduces the lifeof the diode, but can also be visible to a user. The second switchingdevice 70 prevents this by keeping the error detector in its controlrange by means of the replacement source.

FIG. 28 shows a diagram with the main signal flows. With a switched-offdiode, the gate of the p-type field effect transistor 36 of the outputbranch is directly connected to the supply potential VDD. The lowerswitching device 70 connects the tap 42 of the substitute source 40 tothe error signal input 23 of the detector 20. The substitute sourcereflects the current with a lower ratio and the second transistorconnected in series is used for the necessary voltage generation. Thisis selected so that it is close to the expected voltage drop of theconsumer during normal operation. This keeps the fault detector withinits control range and the control loop remains in its steady state.

FIG. 29 shows two principle illustrations of two simple switch devices.Besides these, other switches can be used. They can also be easilyoperated with the PWM signal, which can be used to adjust the brightnessof the LED. In other applications, other suitable switches are used. Theswitching device 70 is similar to a known inverter with the differencethat the transistors shown here are transmission gates. The output 71 isconnected to the error signal input. Input 74 forms the switching inputto which the switching signal, for example, the PWM signal, is fed. Twotransmission gates of different types connected in series are arrangedin series, with output 71 being connected between the two transmissiongates. Gate 73 of the p-type with its terminal 73 forms the connectionto the backup source. Terminal 72 of the second transmission gate formsthe connection for the voltage signal.

FIG. 30 shows a signal-time diagram for different signals in the supplycircuit in the different operating states. V_(FWM) describes the pulsewidth modulation signal for operating LED 60, which is also applied tocircuit devices 70. It is a logic signal and changes between two states“High” and “Low”. In the High state from about 8 μs to 18 μs and thenbetween 26 μs and 44 μs the LED is switched on, at the other times it isswitched off. The current through the LED follows these switching timesas can be seen from the lowest curve marked I_(LED).

In contrast, the voltage VLED changes only slightly between the switchedon state and the switched off state. The voltage decreases continuouslyand would reach the starting voltage of approx. 1.4V over time, acurrent no longer flows, i.e. the LED is switched off. When the LED isswitched on, i.e. at the time of 8 μs, the voltage drop across the LEDessentially corresponds to the substitute voltage or the substitutesignal V_(H). At the time of switching on, a small voltage drop can bedetected in the substitute signal, which can be process-related anddepends, for example, on the parameters of the field effect transistorsused. Since different types (p- or n-mos) are used, their switchingbehaviour is not always the same, so that residual currents could stillflow during the switchover time.

V_(in) shows the signal at the inverting input, i.e. the error signalinput 23. Before the switching time 8 μs, the voltage V_(H) is equal tothe voltage at the error signal input because of the position of theswitching device 70, after switching on it corresponds to the voltageV_(LED). This is illustrated by the “=” sign in FIG. 30. V_(H) is againselected so that it is as similar as possible to the LED voltage V_(LED)expected in normal operation.

The error correction detector 20 now compares the voltages V_(in) aterror signal input 23 and Vip at reference input 22 and generates acorrection signal Vo. At switching time 8 μs there is a small dip of thevoltage Vip at the non-inverting input, which increases a small peak inthe correction signal. This may be a simulation artefact, but can alsobe caused by a sudden change in load in the branch of the power source.In any case, the correction signal is so small and fast that it has noeffect.

The second switching point at 18 μs shows no or if only a significantlylower behaviour. Nevertheless, the control at the switch-on time doesnot significantly affect the output behaviour of the error detector, butrather provides a precise correction signal due to the fast feedback, sothat the output current and voltage are quickly adjusted to the desiredvalue and then remain constant. The simulation of FIG. 30 shows acontrol of less than 0.5 μs in this context.

The proposed supply circuit provides a high-precision current sourcethat is particularly suitable for accurate and color-true control oflight emitting diode applications. The already known PWM can be used forthe contrast adjustment of the individual light emitting diodes in apixel matrix, display or similar. The effects of switching operationsduring pulse width modulation on the current source are reduced by theproposed measures. As a result, even small variations in the operatingcurrent, which are only a few percent above the nominal value of theinput voltage, can be realized without the switching operationsaffecting the stability.

In an implementation, it is possible to build the transistors of thecurrent source close to each other, so that they are thermally stronglycoupled. For the replacement branch, it makes sense to equip it withSi-pn diodes or other measures, such as amplifiers, etc., in order toapproximate the replacement signal to the voltage dropping across theload during operation.

To control μ-LEDs or generally pixels in a display, the switching ratiocan be controlled digitally in addition to setting the current throughthe μ-LED. A digital driver circuit with low own power consumption isstill able to —despite the low power consumption, drive a large numberof optoelectronic elements and especially μ-LEDs.

FIG. 13 illustrates a schematic circuit diagram of an implementation ofa 6-T static random access memory cell, SRAM-6-T memory cell 1, whichincludes two cross-coupled inverters 2 as a 1-bit memory. The SRAM 6-Tmemory cell 1 has a compact memory size in the range of 1.08 μm2 to 1.7μm2 per bit in 65 nm CMOS technology and a low power in the range of0.26 μW to 0.37 μW per bit.

FIG. 14 illustrates a schematic circuit diagram of a driver circuit 10configured to drive an optoelectronic element, which is a μ-LED 11. Thedriver circuit 10 is completely digital and is manufactured using CMOStechnology. In this context, FIG. 14 shows only the circuit diagram. Theμ-LED 11 is manufactured in a material system suitable for generatinglight of the desired wavelength, the circuit may be manufactured in adifferent material system. For the functionality shown, both elementsare electrically contacted. Possibilities for this are disclosed in thisapplication.

The driver circuit 10 includes two cross-coupled NOR gates 12, 13 whichform a first memory cell or latch used to control the current throughμ-LED 11. Driver circuit 10 includes additional first memory cells notshown in FIG. 14. The additional first memory cells have the samestructure as the first memory cell shown in FIG. 14 and are used tocontrol the current through additional μ-LEDs.

Each of the NOR gates 12, 13 has two inputs and one output. The outputof each NOR gate 12, 13 is coupled to one of the inputs of the other NORgate 12, 13. The other input of NOR gate 12 receives a set signal S_iand the other input of NOR gate 13 receives a reset signal R_i. The NORgate 13 generates a signal Q at its output, which controls the gate of atransistor 14.

The shown interconnection of the two NOR gates 12 and 13 with theirinputs R_i, S_i and the output Q corresponds to an RS flip-flop.Accordingly, the NOR gates connected in this way can be replaced in thecircuits shown.

Depending on its gate voltage, transistor 14 switches a current throughμ-LED 11 on or off. The current is generated by a transistor 15. Theμ-LED 11 and the channels of transistors 14, are connected in seriesbetween a supply voltage VDD and ground GND. The driver circuit 10 alsoincludes two pull-up PMOS transistors 16, 17 which are coupled to thetransistors 18, 19 respectively. The transistors 16, 17 receive a signalnon-S_i or a signal non-R_i at the gate terminals.

The μ-LED 11 is arranged together with other μ-LEDs in a pixel array.Each of the μ-LEDs is connected to a driver circuit as shown in FIG. 14.To enable the selection of a line i, the transistors 18, 19 are eachcoupled to the NOR gates 12, 13. The transistors 18, 19 are controlledby a line selection signal Line_i at the gate terminals. Pull-downresistors 20, 21 are also provided to hold back states of thecross-coupled NOR gates 12, 13. When the set non-signal S_i (active lowset) is received by NOR gate 12, the output of NOR gate 13 is triggeredto a high state. The cross-coupled NOR gates 12, 13 hold the high stateuntil they are reset to a low state by the non-R_i (active low set)reset signal received from NOR gate 13.

FIG. 15 shows a schematic circuit diagram of an optoelectronic device30, the optoelectronic device 30 including a pixel circuit array 31comprising an array of μ-LED driver circuits 10 as shown in FIG. 14. Asan example, the array includes 2K rows and 2K columns. Each drivercircuit 10 is connected to a respective μ-LED. In addition, the μ-LEDarray is made of a different III/IV material chip and each μ-LED in thearray is connected to each pixel driver circuit at the drain oftransistor 14 in FIG. 14.

A line decoder and driver 32 selects the lines Line_1 to Line_2K oneafter the other. The PWM signals controlling the current through theμ-LEDs are generated by N loadable 8-bit counters 33, where N is 2K forthis example. The N counters 33 generate the set signals S_i and thereset signals R_i (or alternatively the signals non-S_i and non-R_i) forN columns of pixels simultaneously per selected row. When pixel pulsewidth values, i.e., 8-bit pixel gray data, are loaded into counter 33,the set signals S_i are activated to turn on the pixel stream, and thecounters 33 start with a pixel clock frequency of, for example, between40 MHz to 100 MHz. When counter 33 reaches the pixel data values, thereset signals R_i are activated to turn off the pixel stream.

There is also a 9-bit (MSB) counter 34, which generates the global orcommon dimming for the pixel array. The 9-bit pixel dimming data loadedinto counter 34 thus determines the brightness of the background of thepixel array. If the dimming pulse width is zero, a line scan isperformed so that the pixels in the lines light up. Otherwise, globalpixel illumination is performed first, followed by line-by-linescanning. The set signals S_i and reset signals R_i generated by counter33 and the global or common dimming signals generated by counter 34 arefed to N buffers and multiplexers 35, which pass the signals to thecolumns of the pixel circuit array 31.

The global dimming data can also be combined with the greyscale data inthe video/image signal processor IC or through the μ-LED driver IC, sothat no separate global dimming pulse is required and then only thegreyscale data is updated line by line. The counters 33, 34 arecontrolled by a signal Load Counter. Furthermore, the counters 33receive a clock signal clk. The counter 34 receives a clock signalclk-MSB.

To get rid of dark pixels, the driver circuit can include a secondmemory cell or latch for each μ-LED. FIG. 16 illustrates a schematicdiagram of a driver circuit 40 design based on driver circuit 10 asshown in FIG. 14. Driver circuit 40 includes a first memory cell 41 anda second memory cell 42. Both the first memory cell 41 and the secondmemory cell 42 have a set input S, a reset input R and an output Q.Furthermore, the reset input R of the first memory cell 41 is connectedto the set input S of the second memory cell 42. The outputs Q of thefirst and second memory cells 41, 42 are connected to inputs of an ANDgate 43. The output of AND gate 43 is connected to the gate oftransistor 14.

As can be seen in the function time diagram shown in FIG. 16, a globalreset is performed at the beginning of each frame so that all pixels aredark. Then a global set signal S_d is applied to the set inputs S of thesecond memory cells 42 to make all pixels “normal pixels”. Then thesecond memory cells 42 of the pixel circuit array are loaded or resetrow by row to implement selective dark pixels. An implementation of theoptoelectronic device includes a spatial averaging pixel bias current.The optoelectronic device includes a global N-bit digital-to-analogueconverter, DAC, covering a pixel current range of, for example, 22 nA to1 μA. As illustrated in FIG. 17, identical peripheral bias currents aresummed to produce a spatial average bias.

Turning the pixel stream on and off is controlled by the state of thesecond memory cell or the latch for dark pixels and the PWM signal fornormal active pixels. FIG. 18 illustrates a function-time diagram of theoptoelectronic device. Line 1 of the function timing diagram shows theduration of a frame. During the frame, the display shows a content suchas a video sequence.

At the beginning of the frame a global reset is performed so that allpixels of the display are dark (see line 2). Then dark pixels are loadedline by line so that these pixels are permanently dark during this frame(see lines 3 to 4). Then a global dimming is applied to ensure that thebackground has the same brightness (see line 5). Then grayscale data isloaded to generate the PWM signals starting at line_1 and ending atline_2K (see lines 6 to 7). Finally line 8 shows when the pixels areswitched on. After the frame is finished, the next frame starts.

FIG. 19 illustrates a schematic circuit diagram of another version of adriver circuit 50 configured to drive the μ-LED 11. Driver circuit 50 iscompletely digital and requires even less space than driver circuit 10shown in FIG. 14.

In the driver circuit 50, the first memory cell includes an NMOStransistor 51 and a PMOS transistor 52 connected in series between thesupply voltage VDD and ground GND, which means that the channels of thetwo transistors 51, 52 are connected in series. Additionally, an inputof an inverter 53 is connected between the transistors 51 and 52. Theoutput of inverter 53 is connected to the gates of transistors 51, 52.

Furthermore, an NMOS transistor 54 and a PMOS transistor 55 areconnected in series between the supply voltage VDD and ground GND. Thetransistors 54, 55 receive a set signal S1 or a reset signal non-R1 attheir gate terminals. To remove dark pixels, the driver circuit 50includes a second memory cell or latch that has the same structure asthe first memory cell and is also illustrated in FIG. 19. The secondmemory cell includes an NMOS transistor 56 and a PMOS transistor 57connected in series, an inverter 58 and an NMOS transistor 59 and a PMOStransistor 60 connected in series.

The transistors 59, 60 receive a set signal S2 or a reset signal non-R2at their gate terminals. The output of inverter 53 of the first memorycell generates a signal Q1 and the output of inverter 58 of the secondmemory cell generates a signal Q2. The signals Q1 and Q2 are fed intothe inputs of a NAND gate 61. An inverter 62 is located downstream ofthe NAND gate 61, and the output of inverter 62 is coupled to the gateof transistor 14, which switches the current through μ-LED 11 on and offdepending on its gate voltage.

The function timing diagram of FIG. 19 shown above makes it clear that aglobal reset is performed first by applying the reset signal non-R1 tothe first memory cell. Then the reset signal S1 is applied to triggerthe first memory cell at output Q1 to the high state. The first memorycell holds the high state until it is reset to the low state by thereset signal non-R1. A lower function timing diagram of FIG. 19 showsthe function of the second memory cell during the loading of darkpixels. First a global set signal is applied by signals S2. Then darkpixels are loaded line by line by the non-R2 reset signal.

FIG. 20 illustrates a schematic circuit diagram of another embodiment ofa driver circuit 70, which is a variation of the driver circuit 50 shownin FIG. 19. The driver circuit 70 contains the same first and secondmemory cells as the driver circuit 50, but the driver circuit 70 doesnot contain a NAND gate for combining the output signals of the firstand second memory cells. Instead, driver circuit 70 includes anadditional NMOS transistor 71 connected in series with transistor 54. Inparticular, transistor 71 is located between transistor 54 and groundGND. The gate of transistor 71 is controlled by the output signal Q2 ofthe second memory cell.

FIG. 31 illustrates a version of an analogeue ramp for current controlin the form of a 2500 control circuit that includes a pixel driver witha small footprint. It is built in a semiconductor material and usesvarious techniques described here. Such a concept is based on aanalogeue ramp for lighting control and is particularly space-saving andshows a hysteresis during operation, which reduces noise and makesdouble buffering possible. Double buffering allows longer operatingcycles, which reduces the total power consumption. This aspect can beadvantageous, especially when combined with other power savingfunctions.

The control circuit features a pixel driver as a combination of a 2530pulse generator with a column data buffer as input stage. A common rampgenerator 2502, which can also be used for several pixels 2506, e.g. arow or column, is part of the control circuit in this version. Thecontrol circuit is coupled with its output 2521 to a control input of anadjustable current source of a μ-LED pixel. The current source can beselectively enabled and disabled based on a pulse signal DW applied tothe control input of the adjustable current source. In response to thepulse signal DW the μ-LED is switched on or off. In an alternativeembodiment, the power source can be replaced by a switch or similarelement to ensure that the μ-LED is selectively switched on or off. Thepulse length of signal DW corresponds to the brightness of the μ-LEDelement of the pixel.

The control circuit 2500 comprises a line selection input 2503 for theline selection signal RS and a column data input 2504 for the datasignal AV. These inputs are similar to the conventional approach and infact, they can be used in a similar way. The control circuit alsocomprises a trigger input 2501 for a trigger or “ramp start” signal RaSand a ramp signal input 2505 for a ramp signal.

Similar to the conventional cell as shown in FIG. 55, the column datainput is connected via a switch 2510 to a capacitor 2509 to store datainformation corresponding to the brightness of the μ-LED inside thecapacitor 2509.

Switch 2510 is implemented as described here as a field effecttransistor in Si technology or also in Ga or In technology. The gate orcontrol input of switch 2510 is connected to the line selection input toreceive the line selection signal RS. However, while the conventionalapproach uses the charge stored in the capacitor to control the currentdirectly through the light emitting device, capacitor 2509 is usedtogether with switch 2510 as an input buffer. The output 2511 of theinput buffer and in particular the capacitor and switch are connected tothe pulse generator 2530 to generate a pulse.

Pulse generator 2530 comprises a comparator 2508, which for examplecontains a differential amplifier and an output buffer stage 2507implemented as an RS flip-flop, whose behaviour can be expressed withNOR and NAND gates. The differential amplifier is implemented in thesame technology as switch 2510. For this purpose, it may includetransistors as described in this application. The inverting input 2511of the comparator is connected to capacitor 2509, the non-invertinginput 2512 is connected to the ramp input signal 2505. Comparator 2508can be selectively switched off to reduce power consumption as explainedin detail later.

Comparator 2508 provides a status signal or comparison result CS at itsoutput. The output of the comparator is directly connected to the resetinput R of the RS flip-flop 2507. The set input S is connected to thetrigger input 2501.

The operation of the control circuit is explained in more detail withreference to the various signals illustrated over time in FIG. 32. It isassumed that the line selection signal RS is applied and a constantcharge is applied to capacitor 2509. A constant signal IS is applied tothe non-inverting input of the comparator (corresponding to reference2512). Signal IS corresponds to the brightness of the μ-LED associatedwith the control circuit.

At time T1, the trigger signal RaS changes from a low level LOW to ahigh level HIGH and subsequently the set input S of the RS flip-flop2507 also goes to HIGH. At time T3, the trigger signal RaS will changeback to the LOW level. The ramp signal Rsig is applied at the same timeT1. Ramp signal Rsig increases linearly over the time the trigger isHIGH. This means that ramp signal Rsig starts from a first valuecorresponding to LOW and rises to a second level, i.e. the HIGH level.Ramp signal Rsig is also applied to the non-inverting input of thecomparator. During the time period from T1 to T2, the comparatorcompares the signal IS buffered in capacitor 2509 with ramp signal Rsig.As long as the signal at the non-inverting input is lower than theinverting input, the output signal applied to the reset input R of theRS flip-flop remains LOW. At time T2, the reset input R receives therising edge of the result signal CS when the output of the comparatorchanges from LOW to HIGH. At this time, the ramp signal becomes higherthan the buffered signal IS.

As a result of this transition, output Q of the RS flip-flop resets thecontrol signal DW for the current source to LOW value from time T2. Itcan thus be seen that the time T2 at which the output signal DW switchesoff the current source again depends on the charge stored in capacitor2509, provided that a uniformly rising ramp Rsig is assumed. The rampsignal RSig and the signal IS thus define a pulse whose lengthessentially corresponds to the time period from T0 to T2.

At time T3, the trigger signal changes from HIGH to “LOW”. At the sametime, the ramp signal is switched off, causing the comparator to outputa “LOW” signal. Therefore, both signals at the R and S input will changeto LOW. Due to a small hysteresis in the comparator, the transition forthe trigger signal at input S will be a little faster, causing theflip-flop to keep the output signal DW LOW, regardless of the transitionof signal CS at input R. At time T5, trigger signal RaS is repeated atinput S. Likewise, the ramp signal Rsig starts again at its start value.

The period between time T3 to T5 is the blanking time used to reprogramthe corresponding columns in each row. For this purpose, the rowselection signal is triggered at time T7, which connects the column dataline to the capacitor via switch 2510. Capacitor 2509 is then charged ordischarged to a new value. In this example, capacitor 2509 is dischargedto a much smaller value that corresponds to a different (lower)brightness. The recharging is initiated at time T7 and ends at time T4,when the line selection signal RS goes LOW again, opening the switch.Another row can be addressed and reprogrammed during the cycle for thepresent row at time T5.

Because of the lower level for signal IS, the comparator 2508 nowchanges its output much earlier at time T6 in the new cycle.Consequently, output Q falls to “LOW” at time T6, which is much shorterthan for the previous period of the trigger signal RaS. Output Q withits control signal DW controls the current through the μ-LED coupled toit. The longer the output signal DW remains at HIGH, the longer acurrent flow through the μ-LED, resulting in a high brightness for thecorresponding color. Comparator 2508 and may be the RS-Flip-Flop can beswitched off during reprogramming and blanking time to reduce powerconsumption. For this purpose, at least the comparator comprises a 2520power control unit connected to the trigger input. As long as thetrigger signal is Rsig HIGH, the comparator 2508 is powered to performits operation. During the sampling period, it is switched off inresponse to the trigger signal.

Since in some examples the sampling time can be significantly longerthan the current time for the trigger signal, the whole pulse generatorcan be switched off.

In an alternative embodiment, reference is again made to time T2 in FIG.32. The comparator switches its output signal CS from LOW to HIGH assoon as the ramp signal reaches the threshold of the buffered signal IS.Trigger signal S is still HIGH, which causes the RS flip-flop to switchthe output signal LOW. As you can see, output Q remains LOW regardlessof the level at the reset input R. Therefore, the comparator could beswitched off after a reset because of the transition of the signal atinput R. In some variants, the power control unit 2520 can be coupled tooutput Q to control the power supply to the comparator based on thestate of output Q.

Segmentation and additional ramps can be used if different lines areaddressed. This would allow implementing spatial-temporal multiplexing,which reduces the generation of current peaks and leads to less varyingpower consumption. While in the present example signals have beenapplied to specific inputs on the comparator, the skilled person can seethat the design of this principle can be changed. For example, invertingand non-inverting inputs can be exchanged, resulting in inversebehaviour. The RS flip-flop requires two transistors and resistors,which implements a small asymmetry during the design in the RS flip-flop(e.g. by adjusting the value of one resistor), adjusts the switchingbehaviour and will prevent undefined states.

With some μ-displays, individual pixel errors may occur, which damagethe μ-LEDs. Such errors cannot be avoided. However, a repair with thesize of a μ-display is only possible with a very large effort.Therefore, it is suggested to design not only subpixels redundantly,i.e. to provide more than one subpixel of the same color, but to provideredundant μ-LED branches with selection fuse. These redundant pixels canalso be connected to the same power source. In a test, the functionalityof each μ-LED is now checked. If the test results in two functionalμ-LEDs, one of them can be specifically deactivated to compensate forcolor changes or loss of brightness of the other μ-LED due to thedifferent current flow. If, on the other hand, a fault is detected, theredundant μ-LED continues to be used.

FIG. 33 shows an embodiment of a proposed device that provides suchredundancy with simultaneous selection protection. The illustrationshows two pixel cells each with a first and second branch, each having aμ-LED D1 a and D1 b, respectively. The μ-LED D1 a and D1 b are connectedto a common reference potential connection GND. Their other terminalsare each connected to an electronic fuse Fa and Fb. These are, forexample, a fuse, which melts when the current through the fuse becomeslarge enough. The second branch, i.e. the branch with the fuse Fb andthe μ-LED D1 b also shows an imprinting component EPT. This is designedas a MSOFET transistor and its drain terminal is connected between thefuse and the μ-LED. Its source contact is connected to the commonreference potential, the gate can be supplied with the selection signalVburn via the imprinting signal line EPT. In principle, lines oralternatively columns can be addressed, controlled or selected via theimprinting signal line EP, depending on the wiring.

The pixel cell also includes a 2T1C circuit with a current drivingtransistor T1. This transistor is connected to the supply potential onthe one hand and to the first and second branch and its fuses Fa and Fbon the other hand. A charge storage C is electrically connected to thegate of the first transistor T1 and to the source terminal of the firsttransistor T1. Furthermore, the “t1C cell also comprises a transistor T2which is connected between the data terminal Vdata and the gate of thetransistor T1. The selection signal can be fed to its gate.

For each color of a pixel two μ-LEDs D1 a and D1 b, each electricallyconnected in series to an electrical fuse Fa and Fb, can be provided. Inthis way, redundancy is created for each pixel in all sub-pixels.

In the case where μ-LEDs are electrically connected along a row andalong a column to a common imprinting signal line EP, each pixel cell ofa column, for example, can be electrically connected and addressable tothe supply potential terminal VDD by means of a common supply line to aswitching transistor arranged on a common carrier outside the activedisplay. Fuses of a column can thus be triggered or made to melt.

In the following, the mode of operation of this circuit is explained inmore detail.

In the first case, one of the two μ-LEDs is defective in such a way thatit is “OPEN”, i.e. there is no current flow through the defective μ-LED.Then the test gives a corresponding result and the respective otherμ-LED is automatically used. On the other hand, a “SHORT”, i.e. a shortcircuit, can also be present. If this short-circuit occurs, theresistance through the short-circuited diode is very low, so that thecurrent through the respective fuse is significantly higher. This alsocuts the fuse in a SHORT.

A third case concerns the situation that both μ-LEDs function asexpected. In this case, the current of the power source is split betweenboth branches, which can lead to a color error.

The dominant wavelength depends on the selected current. Therefore, insuch a case, the signal Vburn (high potential, e.g. VDD) is applied sothat the imprinting component EPT becomes conductive. If transistor T1is simultaneously fully switched through by a corresponding signal onthe data and selection line, a high potential is thus applied to thefuse. The resulting high current flow destroys fuse Fb, so that diode D1b is safely disconnected.

When designed in PMOS technology, the potentials and signals exchangetheir polarity accordingly.

The fuse can be designed as a metal strip with different widths. Forexample, one length can be 33 [μm], a width at one longitudinal end 20[μm], at the other longitudinal end 9 [μm] and in a 12 [μm] long centralarea 2 [μm]. The longitudinal ends can be square or rectangular and havepassages. The square longitudinal end can be in the direction of thetransistor T1 and the rectangular longitudinal end can be in thedirection of a light emitting diode. A material can be IGZO, forexample.

Instead of the above-mentioned metal strips, a thin-film transistor canalso be used, especially in diode interconnection, in which the gate andsource are electrically connected permanently. Each μ-LED can beequipped with its own thin-film transistor. This can act as both acontrollable current source and an electrical fuse. By means of asignal, the thin-film transistor can be pulled to zero potential, forexample, so that it burns through as a result of the increased currentflow and the μ-LED is switched off. In principle, all known types ofelectrical fuse can be used. Activation or release does not have todestroy the fuse, but in any case, it must safely disconnect theassigned μ-LED from the power supply.

In this way, an end-of-line test can be carried out without additionalprocess steps such as laser cutting or similar. A combination withembossing diodes as embossing components is also possible.

FIG. 33 shows on the right side a neighboring cell of a first pixelcell. For each line a selection signal line Vsel, an imprint signal lineEP and a data signal line Vdata can be connected. With Vsel and Vdatathe selection signal line generates a signal for selecting the relevantline to activate the associated fuses. The imprinting signal line EPprovides a fusing voltage V_burn for generating a fusing current I_burn.

FIG. 34 shows a second embodiment of a proposed device in which thearrangement between the current source and μ-LEDs is reversed. WhileFIG. 33 shows a configuration with a common cathode, FIG. 34 shows acommon anode configuration with the μ-LEDs.

The anode connections of the μ-LEDs D1 a and D1 b are connected to thesupply potential connection VDD. A first current line contact of a firsttransistor T1 is connected to the reference potential terminal GND. Thedrain terminal of the first transistor T1 is connected to the commonterminal of the electrical fuses Fa and Fb. The selector holding circuitcomprises a charge storage C connected to the control contact of thefirst transistor T1 and to a source terminal of the first transistor T1.

The function of this arrangement is similar, but the transistor EPT isconnected between the fuse Fb and μ-LED D1 b and the supply potential. Avoltage V_burn can be applied to the gate of the imprinting transistorEPT via an imprinting signal line EP, thus causing the electrical fuseFb, which is a fuse, to melt.

FIG. 35 shows a third embodiment of a device with redundant branches ofμ-LEDs, which can be selected by means of selection fuses. In contrastto the embodiment in FIG. 35, the series connection of fuse and μ-LED isswapped in each branch. Thus, the fuse is directly connected to thesupply potential terminal, the μ-LED of each branch is connected on thecathode side to a common base point and to the current drivingtransistor T1. Furthermore, the imprinting transistor EPT is connectedwith its drain terminal between fuse Fb and μ-LED Dib. Its sourceterminal also leads the current driving transistor T1 to the common basepoint for the μ-LEDs. The 2T1C cell is constructed in the same way as inthe previous figure. To melt the fuse, the diode D1 b is bridged withthe imprinting transistor EPT and the signal Vburn, so that a highcurrent melting the fuse flows through the fuse Fb.

As the LEDs are not connected together to the potential connections forVDD or GND, no common electrode of the μ-LEDs can be realized, i.e. oneelectrode for several pixels. This arrangement is suitable, for example,if no common electrode is required for process technology.

FIG. 36 shows a slight modification of the embodiment according to FIG.33, where the transistors are PMOS (especially transistor T1) and thecharge storage is connected between the gate and the fixed supplypotential. The advantage of this embodiment is that the voltage acrossthe charge storage is independent, unlike the R design in FIG. 33, inwhich the voltage across charge storage C can vary slightly due to theforward voltage or changes in it due to temperature fluctuations. Thesame advantage of independence from temperature variations is also shownin the design of FIG. 34.

FIG. 37 shows another alternative version of the embodiment shown inFIG. 36. The imprinting component here is an imprinting diode EPD withone terminal connected to a second terminal of the μ-LED D1 b, to whichthe imprinting diode EPD is assigned, and the other terminal connectedto an imprinting signal line EP, by means of which addressing can beperformed. As shown in FIG. 37, a first terminal of the imprinting diodeEPD is connected between fuse Fb and μ-LED D1 b and a second terminal ofthe imprinting diode EPD is connected to the imprinting signal line EP.The melting voltage V_burn is also applied to the latter, with which theelectrical fuse melts.

During operation, a selection of an electrical fuse Fb to be triggeredis made by switching through the first transistor T1. This is done byprogramming a voltage on the charge storage C via the data line Data andthe selection line Sel. The VDD connection is connected to 0 volts or anegative voltage, in contrast to normal operation. A voltage V_burn isthen applied to the imprint signal line EP, which is more positive thanthe voltage at VDD. In this way, a high current IF or I_burn flows viathe imprinting diode EPD via the electrical fuse Fb and the firsttransistor T1, which is switched on, whereby the fuse Fb is triggered inthe selected pixel cell. The fuse Fb melts and the corresponding LED D1b is switched off. In addition, the potential at the first potentialconnection GND should ideally also be greater than 0 Volt, for exampleequal to the melting voltage V_burn, so that no large current flows viaLED D1 b or D1 a and can damage them.

According to this embodiment, the current (IF, I_burn) required to tripthe electrical fuse Fb flows in the opposite direction to that whichwould flow in “normal operation”. After this procedure in an EOL test,no additional process steps, such as laser cutting or similar, arerequired.

FIG. 38 shows a modification of the embodiment according to FIG. 37, inwhich the imprinting diode was only turned upside down. It is nowconnected on the anode side between fuse Fb and μ-LED D1 b of the secondbranch. The arrangement according to FIG. 38 is created using PMOSthin-film transistors as current driver transistor T1 and a commoncathode arrangement for the μ-LEDs. All imprint signal lines EP of aline of a display are connected together here. The electrical fuse Fb tobe triggered is selected by switching through the first transistor T1.For this purpose, the charge storage C is set to o V or another voltageso that T1 becomes conductive. A voltage of 10 V or another positivevoltage is applied to the VDD connection. The voltage V_burn, which isapplied to the imprint signal line EP, is here more negative than thevoltage at the supply potential connection VDD and is 0 Volt, forexample. In this way, a high current I_burn flows through the imprintingdiode EPD, through the electrical fuse Fb and the conducting firsttransistor T1, whereby the fuse Fb in the selected pixel cell istriggered and thus melted.

Meanwhile, the potential at the first potential connection GND shouldideally be just as high as the potential at the second potentialconnection VDD, so that the LEDs D1 a and D1 b are switched in reversedirection and so that no high current flows over the LED D1 b or D1 aand can damage them despite the first transistor T1 being conductive.According to this embodiment, the current (IF) I_burn required totrigger fuse Fd flows in the same direction as it would in “normaloperation” of the arrangement.

FIG. 39 shows an embodiment of a method for the electronic configurationof a plurality of μ-LEDs. In a first step S1 the μ-LEDs of the firstbranch and the second branch are tested for their functionality. Thisresults in several possibilities, of which the following is probably themost common. In this case, both μ-LEDs function as expected. If this isthe case, in a second step S2 an imprint signal is applied to theelectronic imprinting component. A current is then provided by thecurrent driver or current source, which flows through the now conductivecurrent imprinting element. The current is selected so that the μ-LEDsare not damaged, but the fuse of the respective branch is destroyed.This deactivates the respective branch. In case of a fault, however,only one of the two branches is still functional. The other is either“OPEN”, i.e. no current flows over the faulty branch, or “SHORT”, i.e. ashort circuit is present. In the latter case, the increased current andthe low resistance in this branch can destroy the fuse in the faultybranch, so that the fuse in the faulty branch changes from SHORT andOPEN and does not affect the function of the whole arrangement any more.

With the method described above, the imprinting signal line can bedesigned as a global line, i.e. one connected to all pixels. Addressingis done via the supply line via transistor circuits on a panel outsidean active display, as well as via the selection lines and appropriateprogramming of the charge accumulators of the 2T1C cells.

This results in a reduced wiring effort. Likewise, a reduction of thenecessary layers can be achieved, which can lead to a reduction incosts. However, the switching transistors must be designed in such a waythat they can carry the current of a column. Furthermore, there is anincreased power dissipation in the panel or in the common carrier duringthis process.

The described circuit design with two fuses can be used for a variety ofμ-LED embodiments.

FIG. 40 shows an embodiment of the circuit based on the proposed conceptcombined with a slot antenna arrangement disclosed in this application.The slot antenna has a stack of semiconductor layers with a lowercontact area 1005 and an upper contact area 1011. The upper contact area1011 of each slot antenna is connected to a common ground potentialterminal GND within the substrate 1007 via a transparent cover electrode1002. The substrate 1007 also houses the other circuit elements fordriving and testing the slot antenna. The contact areas 1005 of bothslot antennas are now connected to a fuse F_(a) or F_(b). Between thefuse F_(b) and the contact area 1005 of the right slot antenna there isalso a tap, which leads to the imprint diode EPD and the imprint signalline EP.

The respective other terminals of the fuses F_(a) and F are connected tothe output of the current driver transistor T1. Together with theselection transistor T2 and the capacitor located between the supplypotential V_(DD) and the control terminal of the current drivertransistor T1, the current driver transistor T1 forms a 2T1C cell tosupply the two slot antennas. In one aspect, the current drivertransistor T1 is the dual-gate transistor disclosed in this application.

As explained in the previous examples, a test step evaluates whether thetwo slot antennas are functional. If this is the case, the fuse Fb isdestroyed by the isolating element EPD and thus the right slot antennais cut off from the power supply. If one of the two slot antennas isdefective, the power supply for the remaining slot antenna is providedby the 2T1C cell.

FIG. 41 shows a similar embodiment, in which μ-LEDs are provided in theform of horizontally aligned microrods. These are connected with theirrespective contact 2 to a contact area 3 on the substrate not shownhere. The contact area 3 is in turn connected to the common referencepotential GND. The rear contact connection of each microrod is connectedto the respective fuse F_(a) or Fb. μ-LED D1 b is the redundant diodeand its rear contact terminal is connected to the imprinting transistorEPT. To melt the fuse Fb, the imprinting signal Vburn is applied to thecontrol connection, whereby a high current flows through the fuse fromthe current driver transistor T1 to the imprinting signal line EP. Inthis way, the horizontally oriented microrod Dib is disconnected fromthe power supply. In the event of a production-related failure of themicrorod D1 a due to either a short-circuit or a disconnection, the 2T1Ccell with its current driver transistor T1 supplies the microrod Dib.

FIG. 42 shows a further embodiment, in which a series of basic modules 5are provided. Two first adjacent contacts each are connected to thesupply potential connection V_(DD) via respective fuses F_(a) and F_(b).Between the fuse F_(b) and the respective contact, an imprint transistoris connected, which is connected to the output of the current drivertransistor T1 of a respective current source. In this version, a pair ofbase modules is connected to a common current source comprising a 2T1Ccell consisting of the current driver transistor T1, the selectiontransistor T2 and a capacitor. In the event of a positive test of thetwo base modules, a switching signal is applied via the control terminalof the imprinting transistor EPT and thus a fusing current is switchedvia transistor T1 to the respective fuse F_(b).

Small-scale display arrangements with a high resolution are particularlydesirable for AR systems, such as head-up displays or glasses with alight field display that projects a raster image directly onto theretina. For μ-displays with pixel-sized light sources, so-calledμ-displays in matrix form based on GaN or InGaN are proposed, amongothers.

FIG. 43 shows a display device comprising an IC substrate component anda monolithic pixelated optochip mounted thereon as a first embodiment ofa cross-sectional view. An IC substrate component 1 is shown withmonolithic integrated circuits 2.1, 2.2, 2.3 and with IC substratecontacts 3.1, 3.2, 3.3 controlled by them. The IC substrate component 1can comprise further components for control, power supply and for signalexchange with peripheral devices, whereby an interface 23 is sketched asan example. In this context, reference is made to further differentversions in this application, which describe the digital and analogeuecircuit components in more detail. FIGS. 49A to 49C, 50A and 50B withtheir corresponding descriptions are given as examples.

The IC substrate contacts 3.1, 3.2, 3.3. are metallic and are eachseparated by an insulating layer. A monolithic pixelated optochip 4 isarranged on the IC substrate component 1 and electrically andmechanically connected to the IC substrate contacts 3.1, 3.2, 3.3. To bemore precise, contacts 22.1 m 22.2 and 22.3 are inserted on the surfaceof the pixelated optochip 4 in such a way that they are opposite the ICsubstrate contacts 3.1, 3.2, 3.3 when they are positioned exactly on theIC. As shown, the contacts have the same size in each case, so that evena slight offset as shown has no negative effects and a short circuit isavoided. Various techniques for such a connection are disclosed in thisapplication.

The monolithic pixelated optochip 4 comprises a semiconductor layersequence 5 with a first semiconductor layer 6 with p-doping and a secondsemiconductor layer 7 with n-doping, wherein the first semiconductorlayer 6 and second semiconductor layer 7 are applied over a large areaand extend in the lateral direction perpendicular to the stackingdirection 8 substantially over the entire monolithic pixelated optochip4. Embodiments of the semiconductor layers 6, 7 with several individuallayers of different doping levels or made of different semiconductormaterials are not shown in detail. Between the first semiconductor layer6 and the second semiconductor layer 7 there is an active layer, notshown in detail, with quantum wells in the area of which an active zone24 emitting electromagnetic radiation forms when a current flows throughthe semiconductor layer sequence 5 in stack direction 8.

On the front side 17 above the semiconductor layer sequence 5, atransparent contact layer 16, for example of indium tin oxide (ITO), isapplied flat. In order to achieve a μ-LED 9 with a small pixel size P,in the present embodiment of 2 μm to 5 μm diagonal size, the first lightsource contact 10.1, 10.2, 10.3 on the underside of the firstsemiconductor layer 6 facing the IC substrate component 1 isconsiderably smaller than the pixel size P. For the embodiment, amaximum diagonal MD of the first light source contact 10.1, 10.2, 10.3of 300 nm is selected so that the feature is fulfilled according towhich the projection area 13 of the first light source contact 10.1,10.2, 10.3 on the μ-LED back side 12 corresponds at most to half thearea of the μ-LED back side 12. For the present embodiment, theprojection surface 13 comprises a diagonal of 4 μm and coversapproximately 5% of the area of the μ-LED rear surface 12. This resultsin a laterally limited current path 25 within the μ-LED 9 between thefirst light source contact 10.2 and the second light source contact 11formed by a section of the transparent contact layer 16, which leads toa laterally limited active zone 24. Additionally, non-radiativerecombination at the edges of the active zone 24 are suppressed. Toimprove the lateral confinement of the current path 25, the doping ofthe first semiconductor layer 6 and the second semiconductor layer 7 ispreferably selected such that they have a p or n conductivity of lessthan 10⁴ Sm⁻¹, preferably less than 3*10³ Sm⁻¹, more preferably lessthan 10³ Sm⁻¹. In addition, it is advantageous to select a small layerthickness SD of the first semiconductor layer 6. It is preferred thatthe layer thickness SD of the first semiconductor layer 6 in stackdirection 8 is at most ten times and preferably at most five times themaximum diagonal MD of the first light source contact 10.1, 10.2, 10.3in lateral direction.

According to the invention, the first light source contact 10.2 issurrounded in a lateral direction perpendicular to the stackingdirection 8 by a rear absorber 15.1, 15.2 with an optical blockingeffect, the rear absorber 15.1, 15.2 preferably consisting of silicon,germanium or gallium arsenide and/or having a graphene or soot particleintercalation. From the light path 26 shown in FIG. 44 for the firstembodiment, it can be seen that this measure reduces crosstalk from adriven μ-LED 9 into adjacent pixels.

For the second embodiment shown in FIG. 45, the same referencecharacters are used for the components that are identical to the firstembodiment. Shown are three-dimensional structures on the top of thesecond semiconductor layer 7, which improve the light extraction to thefront side 17. It can be seen that the degree of total reflections isreduced and the output coupling cone is enlarged. For a designalternative not shown in detail, 17 Fresnel lens structures are providedon the front side. In another alternative, photonic crystal structuresare arranged on the surface. In some alternatives, structures arearranged above the μ-LEDs and partly extend into the active layer. Sucha combination is also possible to create a constriction and localizationof the recombination zone.

FIG. 46 shows a third embodiment with a rear absorber 15.2, 15.2, whichcomprises sections 27.1, 27.2 projecting into the semiconductor layersequence 5, which additionally shield the boundary area between adjacentμ-LEDs 9. Structured elements of reflective materials such as aluminium,gold or silver or of dielectric materials whose refractive index islower than that of the first semiconductor layers 6, 7 can be used forthe subsections 27.1, 27.2. For further embodiment, subsections 27.1,27.2 additionally improve the lateral limitation of the current path.

The fourth embodiment shown in FIG. 47 further reduces the opticalcrosstalk between adjacent μ-LEDs 9 by a frontal absorber 21.1, 21.2,21.3, 21.4, which laterally surrounds the second light source contacts11.1, 11.2, 11.3. If the frontal absorber 21.1, 21.2, 21.3, 21.4 iselectrically insulating, the lateral restriction of the current path forthe localization of the active zone 24 can additionally be improved.

For the embodiments shown in the figures, an optochip contact element22.1, 22.2, 22.3 is arranged between the first light source contact10.1, 10.2, 10.3 and the respectively assigned IC substrate contact 3.1,3.2, 3.3. The cross-sectional area of the optochip contact element 22.1,22.2, 22.3 is larger than that of the first light source contact 10.1,10.2, 10.3, so that the monolithic pixelated optochip 4 can be contactedin a simplified manner on the IC substrate component 1.

FIG. 48A shows an alternative embodiment, which is basically based onthe previous example in FIG. 43. However, additional measures have beentaken to reduce the current and prevent optical and electricalcrosstalk. The embodiment is similar to that of FIG. 133 in thisrespect. In particular, a trench 20 was created between the middle andright μ-LED after the application of layers 6 and the active layer,which comprises an optically reflective but also insulating material (atleast on the trench wall). The latter to avoid a short circuit betweenthe pixels, the former to avoid optical crosstalk. Between the left andthe middle pixel a larger trench is created, which essentially extendsthrough layers 6 and 7. It forms not only an optical barrier, but alsoan electrical barrier between the pixels or μ-LEDs. Further aspects ofthis embodiment can be found in relation to FIGS. 131 to 137 and otherplaces in this application.

FIG. 48B shows a further embodiment based on the previous examples.Identical elements carry the same reference points. In this embodiment adoping 32 is introduced in layer 6 between the individual μ-LEDs. Thedoping changes the band structure in this area and leads to an increaseof the band gap. Injected charge carriers thereby experience a field andare kept away from this area. Together with the light source contact10.2, effective localization is thus also achieved in the area of therecombination zone shown in FIG. 48B.

Another aspect is the photonic structure 32 on the surface of layer 16,where a transparent material 31 a with a high refractive index (e.g.Nb₂O₅) is directly applied as a column or pillar over a recombinationzone. Light generated in zone 24 is bundled by the column as waveguideand thus directed. Another column of the same material 31 b is locatedin this configuration between two adjacent pixels. Between them, atransparent material with a lower refractive index is filled in. Thisresult in a refractive index variation in lateral alignment similar tothe structures described above. The periodic variation of the refractiveindex leads to an optical band gap. The size and shape of this band gapdepends, among other things, on the periodicity, so this diagram is onlyan example, other periodicities are also conceivable. Such a combinationof the different techniques results in a strong localization on the onehand and a good directional radiation on the other hand. Crosstalk isprevented. The IC structure and the comparatively large contacts alsoimprove the alignment and fastening of the two layer structures.

FIG. 49A illustrates a general overview of digital and analogeueconcepts of the three essential parts of a μ-LED display array with itsmain functionality. Sections I and II concern analogeue sections of theμ-display with a plurality of pixels arranged in rows and columns. Eachpixel 141 can either consist of subpixels with different colors.Alternatively, displays with pixels of similar size can be used toobtain the different colors. The μ-LED display is implemented in thisembodiment as a monolithic display comprising a first substrate carrieron or in which the μ-LED pixels are integrated. However, other designs,in particular, the designs disclosed here, are also conceivable,including the antenna slot structure and the realization of the μ-LED inbar form or in modules.

In some cases, the first substrate carrier also includes the circuit forthe analogue section II. In an alternative, the substrate of the μ-LEDis thinner and comprises a large number of contacts on its underside.The contacts on the underside are then bonded or otherwise attached to acarrier that includes the analogue section II. Alternatively, theanalogue section II can be grown on a thinned substrate that alsocarries the μ-LED pixels on the other side. Such an approach can reducemisalignment between the analogue section and the μ-LED pixels. On theother hand, a material system is required that is suitable forintegrating an analogue circuit.

The analogue section II of the arrangement contains the control for thecurrent through the respective pixels. For this purpose, each pixel 141with its anode contact is brought into contact with a common sourcepotential 1411. The respective cathode of the μ-LED pixels is connectedto an adjustable driver, which in this case is implemented as currentsource 142, which is integrated in section II and in turn connected toterminal 1412. In this design, a common anode contact is thus realized.Cover electrodes as disclosed in this application may provide such afunction. However, the other case of a common cathode also exists. Inthis case, the μ-LED is located between cathode potential terminal 1412and the current source. The advantage of such an arrangement is that thesupply voltage can be somewhat lower and the μ-LED does not have toprocess a large input voltage.

Section II also includes a reference current source 1410, for example atemperature-stabilized current mirror or the like, to supply the samereference current to the respective current sources 142. While only onecurrent source is shown in this example, multiple reference currentsources may be used to provide a respective reference current fordifferent pixels. For example, each pixel line can be assigned to areference current source. If such reference current sources areswitchable, the current sources for each row can be switched on or offperiodically, thus reducing power consumption. In terms of embodiments,Section II is manufactured in polysilicon, which thus comprises adifferent material system than that used for the realization of theμ-LEDs in Section I.

In addition to the reference current supplied to each of the currentsources 142, the current sources also include a switch input to workselectively with each current source and then separately with eachpixel. Switching the current sources using PWM techniques to adjust thebrightness of each pixel, as explained, further reduces overall powerconsumption. The PWM signal is generated in digital section III of thearray.

The digital section III comprises a clock input CLK and a data inputDAT. The data input DAT is coupled to 12-bit shift registers 148, whichare connected in series. The shift register receives the incoming datastream and delivers a corresponding word to a 12-bit memory 147 forstorage. The 12-bit memory may comprise flip-flops or a similar circuitto store the 12-bit words in memory. The memories are coupled to theother input of each comparator 144. In this way, a data stream can beused to store temporarily a whole series of brightness values in theflip-flops of memory 147.

The clock signal at input CLK defines the clock for a counter 149 thatsupplies a 12-bit counter word D0 . . . 11. Counter word D0 . . . 11 isapplied to the respective comparators 144, which are connected to thecurrent sources 142 of each μ-LED pixel. In an alternative embodiment,other components can also be used if necessary, for example, acombination of different gates, which check whether counter word D0 . .. 11 is smaller than the word of the memory connected to it.

When operating such an arrangement, comparator 144 compares counter wordD0 . . . 11 with the memory word, i.e. the contents of the 12 bitmemory. Depending on the result, for example whether the comparison withthe comparator indicates whether the counter word D0 . . . 11 is largeror smaller than the memory word, the current source is switched on oroff. In other words, the comparison with the comparator results in apulse width based on the clock signal in counter 149 to operate eachpixel. For example, the first pixel in the displayed chain should have adark value, i.e. be switched off, the second pixel should have a lightvalue or be completely switched on. The data stream then has thefollowing relevant string of zeros and ones in two words, strungtogether in the form of “0000000000111111111111”. After the words arestored in one of the two memories 147 each, they are sent in invertedform to the comparator 144. The comparison is made in the comparator. Aslong as the counter word D is smaller than the memory word M, the driverremains switched on (in the example with the inverting comparator,“111111111111” and “000000000000” are thus compared with the counterword).

The μ-LED display array contains different parts that have differentrequirements and limitations, making it difficult to implement in asingle semiconductor material. Nevertheless, the main challenge is thesize predefined by the pixel size of the μ-LED. Transistors or otheractive elements in the analogue or digital part face this limitation,which excludes certain implementations.

FIG. 49B shows another version of the three sections of a μ-LED displayarrangement with its main functionality. While the first section isessentially the same as the corresponding section I of FIG. 49A, sectionII is slightly different. Section II now includes a DEMUX Demultiplexer,which switches between the different pixels using a higher clocked syncsignal Sync. The frequency of this signal Sync has a higher frequencythan the refresh rate and depends on the number of signals O1 to O3generated by the DEMUX demultiplexer. In one configuration, thedemultiplexer controls all pixels of a row or a column. In analternative configuration, a demultiplexer can be used for each subpixelof a pixel. Combinations of these are also possible. This allows thenumber of necessary contact areas between section II and section III tobe reduced.

Section III again comprises a multiplexer between the outputs of therespective comparators Comp. D>M and the demultiplexer of the secondsection II. The synchronization signal Sync is the same as for thedemultiplexer in section II and is generated together. Another changecompared to the execution of FIG. 49A is that the counter word (D0 . . .11) determining the PWM modulation for the individual comparators is feddirectly to the comparators individually and not jointly. In contrast tothe embodiment of FIG. 49A, the implementation of a multiplexer anddemultiplexer has the advantage that the number of interconnects, i.e.the number of connections between the purely digital section III andsection II can be reduced. In contrast, an additional higher-frequencysynchronization signal must be routed between Sections III and II viaone of these interfaces.

FIG. 49C shows a functional circuit diagram of a version of a knowncomparator, as it can be used in parts in principle in the embodiment ofFIGS. 49A and 49B. The circuit represents a 2 BIT comparator, but can beextended to several bits. In practical implementation, the invertinginputs can also be omitted. Since there is also a comparison with thecounter word, it is sufficient to implement the circuit part A>B or A<B.

FIG. 49D shows a time diagram for the various counter words 1D to 3D andthe memory registers as they are used to generate the output signal. Thecounter words D0 . . . 11 are time-shifted so that each time word startswhen the previous one has passed through. With the comparator or an ORfunction the output signal O1 to O3 is generated, which is then fed tothe multiplexer.

The μ-display arrangement comprises various parts with differentrequirements and limitations, making it difficult to implement in asingle semiconductor material. A challenge also lies in the availablespace, which is essentially determined by the pixel size of the μ-LED.Transistors or other active elements in the analogue and digital partare subject to this limitation, which excludes certain implementations.

FIG. 50A shows an exemplary sectional view of a μ-display to illustratedifferent aspects of contacting and wiring of the individual sections.Similar to FIG. 49A or 49B, the μ-display comprises a μ-LED section I,an analogue section II and a digital section III. The μ-LED portion isbased on GaN, InGaP or another semiconductor material capable ofemitting light of blue, red or green color. The μ-LED section Icomprises the common cathode or anode (+) contact layer 1411 extendingon the upper surface and connecting each of the active regions of theμ-LED pixel 141. Not shown is an additional out-coupling orlight-shaping structure on the surface of layer 1411, which may includephotonic structures, converters or the like.

The pixels are arranged in a substrate and are optically andelectrically separated from each other so that their emission does notdisturb neighbouring μ-LED pixels and the pixels can be controlledseparately. For example, μ-LED pixel 141 can be implemented using thecurrent limiting doping described above. In this case, the current flowis limited to a smaller area by doping. The doping changes the band gapso that the charge carriers are effectively limited. Examples of suchlimitations or other structural measures to improve quantum efficiencyand/or radiation characteristics are disclosed in the other sections.The pixels may also contain LED nanorods arranged in a slotted antennastructure, as also described above. Also bars or the other μ-LEDstructures disclosed in this application are conceivable.

The underside comprises in some areas an insulating material to preventleakage current. The surface is shaped in such a way that area II isaligned so that the elements are mainly below the respective pixelelement. Each μ-LED pixel includes a contact area facing area II, whichforms the connection to area II of the μ-LED display.

The analogue section II of the μ-display of FIG. 50A can be implementedfrom or based on the same semiconductor material system. For example,active and passive components used for the power sources can beimplemented in GaN InGaP or InAlP systems, provided that spacerequirements can be met. In such cases, the forming of the componentscan be achieved using several conventional deposition techniques. Thishas the advantage that contacts of the μ-LED pixels in the interface ofsection I can easily be aligned with the traces within section II.Stress and strain due to different temperature coefficients can also beminimized. Alternatively, section II is formed with a differentsemiconductor material. For example, polycrystalline silicon oramorphous silicon structures are suitable and are understood to formsmall components. Both sections can be formed, aligned and joinedseparately.

Due to the size requirements, the alignment must be very precise, as thesize of the contacts of the μ-LED can only be in the range of a few nm².As a further alternative, polysilicon material can be deposited on thelower surface layer by various growth processes to form subsequently therequired circuit components. To reduce the voltage, one or moresacrificial layers can also be implemented. Furthermore, the polysiliconlayer can be formed first, and then the μ-LED pixels can be formed usingthe desired material system. In the present example, different materialsystems are used for area II and I, but the expansion and otherparameters are adapted so that a joint production is possible.

For this purpose, section II is manufactured with polycrystallinesilicon. Polycrystalline silicon or amorphous silicon structures arewell understood to form particularly small dimensioned components. Forthis purpose, polysilicon material is applied to a suitable carrier andthe necessary components are formed in it. To reduce the thermalexpansion, several intermediate or sacrificial layers are provided,which do not take over any further function, but adapt the thermalparameters by the different crystal structure. Such layers are alsolocated between area II and area I. There a change of the materialsystem to the material system intended for μ-LED pixel production takesplace. Then the μ-LED pixels are formed.

Alternatively, all sections can be formed separately, aligned and thenbonded together. Due to the size requirements, the alignment must bevery precise, because the size of contacts of the μ-LED may only be inthe range of a few μm².

Depending on complexity, area II as illustrated in FIG. 50A by elements151 and interconnection layers 152 contains one or more transistors thatare part of a power source or switch. Interconnection layers 152,arranged in several layers of Section II, connect the contacts on thesurface of Section II to the various components in Section II. Forexample, contact 165 s of transistor 152 is connected to the top contactvia an interconnection layer and to the corresponding μ-LED. Similarly,gate contact 169, which controls transistor switching or resistorbehaviour, is coupled to contact interface 153 on the bottom surface ofthe portion adjacent to Digital Section III.

Digital section III is based on silicon and comprises some digitalcircuits 170. It is normally formed separately and then electricallyconnected to the analogue section II by a bonding process. Forming thedigital and analogue sections separately allows for optimizedmanufacturing techniques and testing of the analogue and μ-LED sectionsprior to bonding to the digital section. Similar to the analoguesection, the digital section III contains some interconnections fordigital and analogue signals. Power may also be provided via the digitalsection III.

The small space available may require different setups andimplementations. One aspect is the integration of transistors within theanalogue section to form the power source and control circuitry. FIG. 51and FIG. 52 illustrate various examples of the implementation of fieldeffect transistors with small space requirements in the semiconductormaterial.

FIG. 51 illustrates an inverted stacked transistor formed with amorphoussilicon. The transistor has an insulating gate layer 155 formed of SiNover gate contact 156. The gate contact 156 is shaped by a small bump sothat the gate layer 155 follows the bump, which has a central region 157and two sloping sidewalls 158. A layer of amorphous silicon 154 isformed over the gate layer, thus also forming a central area and twosloped sides. The surface of the amorphous layer 154 can be highlyn-doped to form a highly n-doped layer of amorphous silicon 151 withhigh conductivity. Alternatively, the highly n-doped layer 151 isdeposited on layer 154.

Finally, a metal layer is applied to the n-doped layer 151, which alsoextends to the side edges of the silicon layer 154 and SiN layer 155. Agap in the metal layer and the layer 151 divides the structure and thusforms a source and a drain contact. In particular, metal layer 152 formsa drain contact, while metal layer 153 forms the source contact of thefield effect transistor. The conductive channel is then formed in thepolysilicon layer in the central region between source and drain. Thehighly n-doped polysilicon layer 151 provides a good electricalconnection to the channel in layer 154. This structure allows the gateto be contacted from a side other than source and drain, taking up verylittle space.

FIG. 52 shows two examples of space-saving polysilicon transistors. Thetransistors are formed on a glass carrier with a grown SiO₂ layer asbase substrate. Each transistor comprises two highly n-doped polysiliconregions 165 s and 165 d, separated by an undoped polysilicon layer 170,which is located between the regions 165 s and 165 d. Adjacent to thedrain region is a lightly doped drain region 166, which is locatedbetween the polysilicon region 170 and the drain region 165 d.

Alternatively, a gold-doped region 167 is formed between polysilicon 170and drain region 165 d. The source 165 s, drain 165 d and undoped areas170 are then completely covered by a SiO₂ layer, which extends on thesidewalls of the areas 165 s and 165 d respectively. Holes are etchedover areas 165 s and 165 d to gain access to the source and drain areas.The holes are filled with a metal, for example Al, to create electricalcontacts. The contact also runs over the sidewall of the SiO₂ layer,creating a larger area for contacting. In the center above thepolysilicon layer 170 a gate is formed by applying an aluminum layer 169on top of the insulating SiO₂ layer. Gate 169 is electrically insulatedfrom the metal contacts for source and drain.

The limited space available may also require new concepts for theimplementation of control circuits. In conventional circuits forcontrolling LED displays, the pixels are arranged in addressable rowsand columns. Each pixel consists of one LED of a certain color oralternatively of a triplet of three different LEDs. In the latter case,a pixel can also be referred to as a pixel containing three sub-pixels,each of which comprises an LED of a particular color.

Referring again to the example of FIG. 49A or 49B, FIG. 50B showsvarious designs for connecting μ-LED structures to digital circuitsections. The two sections can be based on different material systems ortechnologies. The upper first section comprises the μ-LED elements orpixels or subpixels arranged in rows and columns. Depending on thedesired color, different material systems and technologies are used, forexample the materials InGaN and InGaAlP. In a first example, the waferor μ-LED structure is connected to a wafer based on crystalline siliconusing a W2 W (wafer to wafer) process, which includes the digitalcircuit section and any necessary analogue sections. In the example ofFIG. 49B, section I is realized by the upper wafer, the lower wafercomprises sections II and III. In the second example of FIG. 50B, thinfilm layers of polycrystalline silicon are deposited on the bottom ofthe first wafer with the first section at low temperatures. This sectioneither provides pure interconnects to connect to the digital section IIIor additionally houses driver circuits or other components to drive theμ-LEDs. In these two examples, the wafers are interconnected together toproduce the desired display or matrix. The third example shows analternative embodiment, in which individual chips are provided withdigital circuits and are operatively connected to section II. The chipsinclude, for example, rows and column drivers for driving parts of thedisplay.

FIG. 54 shows an embodiment described in more detail below. In this way,individual parts of the display can be controlled separately. Inaddition, this type of separation during production allows individualfaulty circuits to be sorted out without having to replace the entirewafer in case of a fault in one element of the digital circuit insection III.

The limited space under the analogue sections makes new concepts for therequired implementation of digital control concepts. In conventionalcircuits for controlling LED displays, the pixels are arranged inaddressable rows and columns. The same principle can also be applied inthe present case. Each pixel has one LED of a certain color oralternatively a triplet of three different LEDs. In the latter case, itcan also be called a pixel if it contains three subpixels, each of whichcomprises a μ-LED of a certain color.

FIG. 53 shows a diagram with the elements required to address aconventional LED display. For simplicity, only one color type is shown,although each pixel contains three LEDs with different colors. Thepixels are arranged in addressable columns and rows. The displaycomprises an 1800 pixel matrix with 1920 pixels per row and 1020 lines.The pixel matrix was constructed in a monolithic way. The display hasseveral line drivers 1802 and several column drivers 1803 to addresseach pixel in the pixel matrix individually. Both driver types can beintegrated into the matrix or provided as external components coupled tothe matrix via an interface. A combination is also possible.

Each of the line drivers 1812 has an individual driver device that iscoupled to a corresponding line 1805 a, 1805 b and drives the currentthrough it. Likewise, each column driver has a driver element 1813, eachdriver element being connected to a data line 1804 a, 1804 b. Pixeldrivers 1801 are located at the intersections of the rows and columns.The pixel driver 1801 is connected to the rows and columns and drivesthe corresponding pixel.

The display includes some control and address signals from externalcomponents, two of which are specially marked here, namely DATA andSYNC. The latter signal SYNC is used to synchronize the row and columndrivers with each other to avoid artefacts and ensure clean programming.By addressing a corresponding row, the pixels connected to thecorresponding row are selected. The DATA signal is then applied to theappropriate columns to program each of the pixel drivers 1801 in theselected rows.

In the case of a display with a large number of pixels, the clocking forconventional display programming can lead to high frequencies for theprogramming signal. For example, in the display of FIG. 53, thefrequency for the programming frequency per bit and row may be severalMHz depending on the color depth of each subpixel in the range. Forexample, with a brightness depth of 10 bits, corresponding to 1024different illumination values, the programming frequency for 1080display lines and a frame rate of 60 Hz is about 66 MHz.

The table below shows the frequency of the programming signal and theprogramming time per bit and row in μs. With increasing color orillumination depth, the PWM time units for programming and therefore theprogramming frequency increases.

Programming Programming frequency Color bits PWM units time in μs (MHz)8 255 0.06 17 10 1023 0.02 66 12 4096 0.00 265 14 16383 0.00 1062

The very short programming time, especially with high color orillumination bits (i.e. 12 bits or 14 bits), leads to a high load on thecorresponding line and column drivers. In the extreme case of a changefrom white to black or vice versa of a single pixel, the column drivermust reprogram (reload) the pixel in a few ns. For comparison,ultramodern DDR4 rams run at an internal frequency of about 800 MHz to1.5 GHz, i.e. in the range of the programming frequency of 14 bitillumination depth.

In order to reduce the programming frequency, the rising and fallingclock edge can be used for programming, as similarly in memories. It isalso possible to segment the display and divide the display matrix intodifferent segments. Depending on the production technology, segmentationallows individual segments to be tested separately, so that they can bereplaced in the event of errors.

FIG. 54 shows an example where a display of 1920×1080 pixels issegmented into a 2×2 matrix with sub-displays. Each subdisplay 1800 a to1800 d contains a pixel matrix of 960×540 pixels. Similar to the displayin FIG. 53, each subdisplay comprises its own column and row drivers1802 a, up to 1802 d, and 1803 a to 1803 d. DATA and SYNC signals arealso supplied to the respective segments. The smaller number of linesreduces the programming frequency accordingly. Further segmentation ofthe columns as shown in FIG. 54 will also reduce the demand on thecolumn drivers and the load with each programming cycle is reduced. Thefollowing table shows an example of programming time and programmingfrequency for 108 display rows per segment (there are 10 such segmentsin total, again with a refresh rate of 60 Hz.

Programming Programming frequency Color bits PWM units time in μs (Mhz)8 255 0.61 1.7 10 1023 0.15 6.6 12 4096 0.04 26.5 14 16383 0.01 106

As shown, the reduced number of lines due to segmentation reduces therequirements for programming time and programming frequency by roughlythe factor of segmentation. Each of the segments is implemented in asimilar way. Each pixel matrix 1800, 1800 a to 1800 d contains lines androws on which the pixel drivers and light emitting devices are arranged.

FIG. 55 shows an example of a conventional pixel driver such as a 2T1Cstructure in which the current through the LED is controlled by a chargeprogrammed during the blanking time of the display. The driver islocated at the interface of a line 1805 and a data line 1804.Furthermore, a supply line 2002, which provides a supply voltage V_(DD)and a current I_(DAC), is coupled to the light emitting device 2004 viaa driver transistor 2003.

The driver transistor 2003 thus operates as a controllable currentsource. The current through the driver transistor 2003 is controlled bythe 1T1C structure 2002. In particular, a field effect transistor M2 hasits gate connected to the line selection line for programming and actsas a switch.

When activated by a “HIGH” signal on the line selection line, transistorM1 closes and data line 1804 charges capacitor C1 to the desired level.During this programming, the power supply line may be switched off thatthe light emitting device is basically off. This will prevent variousartefacts during programming. After reprogramming, transistor M2 is openagain and the charge stored in the capacitor drives current transistorM1 so that a current flows through the light emitting device. Thecurrent corresponds to the stored charge and thus to the desiredlighting level.

FIG. 56 shows the schematic for a conventional column or data driver.The driver comprises a digital section and an analogue section to drivethe corresponding data lines. Alternatively, the output can controldedicated drivers for the data lines. Apart from power supplyconnections in GND, VDD and VSS, further control signals CLK and DIR areprovided. Digital values R, G and B for the different colors are storedin a buffer. They are forwarded and processed by a level shifter andthen fed to a digital-analogue converter. The DAC can also correct somevalues by using a separately generated correction signal Vg-cor. Afterconversion to analogue signals, they are stored in an output buffer andthen applied to an output buffer. The analogue rgb signals are thenapplied to the data lines. Although only 3 data output lines are shownhere, the column data driver provides signals for all data lines in thedisplay matrix.

FIG. 57 shows an example of a conventional line driver. The drivercomprises a shift register that receives the CLK and DIR signals and iscoupled to a large number of logical AND gates via a level shifter. Thegates also receive an ENABLE signal, to which the corresponding outputsin the output buffer go HIGH. During operation, the shift registershifts the bits with each CLK signal to apply selectively a HIGH signalto one of the corresponding gates. The ENABLE signal is required toactivate globally line selection during reprogramming.

FIG. 348 generally shows a possible embodiment of a semiconductor layerstack. This comprises an n-doped layer 3, which is epitaxially depositedon a substrate not shown. The n-doped layer 3 is followed by the activeregion. This contains a multiquantum well structure with the quantumwell layers 3.1 and 3.2. The multiquantum well structure can have aplurality of such successive layers, which are also formed withdifferent material systems. Adjacent to this is the p-doped layer 2,followed by a current widening layer 1.

In the following, various devices and arrangements as well as methodsfor manufacturing, processing and operating as items are again listed asan example. The following items present different aspects andimplementations of the proposed principles and concepts, which can becombined in various ways. Such combinations are not limited to thoselisted below:

836. Device for electronic control of a μ-LED pixel cell, in particularcreated with NMOS technology, comprising

-   -   a data signal line, a threshold line and a selection signal        line;    -   a μ-LED electrically connected in series to a dual-gate        transistor and together with it between a first and second        potential terminal;    -   wherein the dual-gate transistor is arranged with its current        conduction contacts between a terminal of the μ-LED and a        potential terminal, and a first control gate of the dual-gate        transistor is connected to the threshold line;    -   a selection hold circuit comprising a capacitor coupled to a        second control gate of the dual-gate transistor and to a current        conduction contact of the dual-gate transistor, and a control        transistor having its control terminal connected to the        selection signal line.

837. Device according to item 836, the dual-gate transistor comprising abackgate transistor in which the backgate forms the first control gate.

838. Device according to item 836 or 837, where the first control gateof the dual-gate transistor is configured to set a threshold voltage.

839. Device according to any of the preceding items, in which thedual-gate transistor comprises a thin-film transistor with two oppositecontrol gates.

840. Device according to any of the preceding items, which is configuredin such a way that a switching signal (PWM signal) is applied to thethreshold line during operation.

841. Device according to any of the preceding items, in which a firstterminal of the μ-LED is connected to the first potential terminal; andin which the dual-gate transistor is arranged with its currentconducting contacts between a second terminal of the μ-LED and thesecond potential terminal; and the capacitor is connected to the secondcontrol gate of the dual-gate transistor and to the second terminal ofthe optoelectronic component.

842. Device according to any of the preceding items, in which the firstterminal of the μ-LED is connected to a second current line contact ofthe dual-gate transistor and its second terminal is connected to thesecond potential terminal;

the dual-gate transistor with its current line contacts is locatedbetween a first terminal of the μ-LED and the first potential terminal;

the capacitor is connected to the second control gate of the dual-gatetransistor as well as to the first potential terminal.

843. Device according to any of the preceding items, in which

-   -   the first terminal of the μ-LED is connected to the first        potential terminal;    -   the dual-gate transistor with its current line contacts is        arranged between a second terminal of the μ-LED and the second        potential terminal;    -   the capacitor is connected to the second control gate of the        dual-gate transistor and to the second potential terminal.

844. Device according to any of the preceding items, in which theselection hold circuit comprises another control transistor.

845. Device according to item 844, in which the further controltransistor is connected in parallel with the μ-LED and its controlterminal is connected to the selection signal line.

846. Device according to item 845, in the case of the dual-gatetransistor is configured as a transistor with one gate providing thesecond control gate.

847. Device according to any of the preceding items, in which the chargestorage is connected to the second control gate of the dual-gatetransistor and to the first potential terminal, and further comprising:

a temperature compensation circuit with a negative feedback based on thedetection of a forward voltage by the μ-LED, the temperaturecompensation circuit being configured on the output side to output asignal on the threshold line.

848. Device according to item 847, in which the temperature compensationcircuit comprises a control path arranged in parallel with the dual-gatetransistor and having two paths connected in series.

849. Device according to item 847, in which the threshold line isconnected from a node between the two controlled paths provided by athird control transistor and a fourth control transistor, to the firstcontrol gate of the dual-gate transistor.

850. Device according to item 849, in which the control terminal of thefourth control transistor is connected to the second potential terminal.

851. Device according to any of items 847 to 850, in which thetemperature compensation circuit comprises a second charge storagedevice connected to a control terminal of a control transistor providingone of the two paths and to the first potential terminal.

852. Device according to item 851, in which a second data signal linefor programming a negative feedback factor is provided, which is coupledto the second charge storage and the third control transistor.

853. Device according to item 852, in which the coupling is establishedvia a fifth control transistor controlled by a second selection signalline.

854. Device according to any of the items 847 to 850, in which thetemperature compensation circuit is connected to the second potentialterminal via its third control transistor

855. Device according to any of the items, in which a fifth controltransistor is connected in parallel to the μ-LED, on which a switchingsignal (PWM signal) is applied to its control terminal during operation.

856. Device according to any of the preceding items, in which thetransistors are field-effect transistors using NMOS technology.

857. Method of operating a device according to any of the precedingitems, wherein an analogue data drive signal for color control of theμ-LED is applied to the μ-LED via the selection hold circuit by means ofthe selection signal, and brightness control of the μ-LED is effected bymeans of a coupled pulse width modulation signal.

858. Use of a device according to any of the items 836 to 856 fordriving a μ-LED or m-LED array or optoelectronic device according to anyof the preceding items.

859. Driver circuit for driving a plurality of optoelectronic elements,comprising:

a plurality of first memory cells, each comprising a set input,

a reset input and an output,

wherein each first memory cell at said output is triggered to a firststate by a set signal at said set input and maintains said first stateuntil reset to a second state at said reset input, and

wherein the output of each first memory cell is configured to control arespective one of said optoelectronic elements.

860. Driver circuit according to item 859, wherein each first memorycell provides a pulse width modulation signal, PWM signal at the output,and the PWM signal controls a switch configured to switch a currentthrough the respective optoelectronic element on and off.

861. Driver circuit according to any of the preceding items, whereineach first memory cell comprises two cross-coupled NOR gates or twocross-coupled NAND gates.

862. Driver circuit according to any of the preceding items, each firstmemory cell comprising an NMOS transistor and a PMOS transistorconnected in series, and an inverter having an input connected betweenthe NMOS transistor and the PMOS transistor and an output connected tothe gates of the NMOS and PMOS transistors.

863. Driver circuit according to any of the preceding items, furthercomprising a plurality of counters each configured to activate a setsignal when a data value is loaded into the respective counter and toactivate a reset signal when the respective counter reaches the loadeddata value.

864. Driver circuit according to any of the preceding items, furthercomprising a common counter configured to generate a common dimmingsignal for the plurality of optoelectronic elements.

865. Driver circuit according to any of the preceding items, furthercomprising a plurality of second memory cells, each second memory cellbeing coupled to a respective one of the first memory cells andconfigured to override an output signal of the respective first memorycell as necessary to leave the respective optoelectronic element turnedoff.

866. Optoelectronic device, comprising:

a plurality of optoelectronic elements, in particular μ-LEDs or μ-LEDarrangements according to any of the preceding items, and

a driving circuit for driving the plurality of optoelectronic elementsaccording to one of the preceding items.

867. Optoelectronic device according to item 866, where theoptoelectronic elements are μ-LEDs.

868. Method of operating an optoelectronic device according to item 866,comprising the following steps performed in the specified order during aframe:

-   -   switching off all optoelectronic elements;    -   controlling the optoelectronic elements that darken during        framing by means of the second memory cells; and    -   controlling the current through the optoelectronic elements by        means of the first memory cells.

869. Method according to item 868, in which a common dimming of theoptoelectronic elements is carried out before the current through theoptoelectronic elements is controlled by means of the first memorycells.

870. Control circuit for adjusting a brightness of at least one μ-LED,comprising a current driving element having

-   -   a control terminal, the first terminal of which is connected to        a first potential;    -   a capacitor connected between the control terminal and the first        potential and forming a capacitive voltage divider with a        defined capacitance between the control terminal and the first        terminal;    -   a control element adapted to apply a control signal to the        control terminal during a first time period, on the basis of        which a current flowing through the at least one μ-LED is        adjustable during the first time period;

wherein during a second time period subsequent to the first time period,a current flowing through the μ-LED is determined by a reduced controlsignal formed by the control signal during the first time period and thecapacitive voltage divider; and

the control element is arranged to provide a first or a second controlsignal during the first time period in order to operate the μ-LED at atleast two different brightness levels.

871. Control circuit according to item 870, in which the current drivingelement comprises a field effect transistor whose gate forms the controlterminal and the defined capacitance is a gate-source capacitancepredetermined by design.

872. Control circuit according to any of the preceding items, in whichthe reduced control signal applied to the control terminal during thesecond time period is obtained from the control signal during the firsttime period and the ratio of a capacitance of the capacitor and the sumof the capacitance of the capacitor and the defined capacitance.

873. Control circuit according to any of the preceding items,characterised in that the control is set to operate the first and secondtime periods at a repetition frequency of 60 Hz or more.

874. Control circuit according to any of the preceding items, in whichthe control element comprises a control transistor at whose controlterminal the first and second time periods are adjustable by means of asignal.

875. Control circuit according to any of the preceding items, in which aratio of the second time period to the first time period is in the rangeof 300:1 to 100:1, in particular in the range of 100:1

876. Control circuit according to any of the preceding items, adapted tooperate the μ-LED at a first, darker brightness level when a voltage ofthe first control signal is within a first voltage interval, and tooperate the μ-LED at at least a second, brighter brightness level when avoltage of the second control signal is within a second voltage intervalwhich is at least partially above the first voltage interval.

877. Control circuit according to item 876, characterized in that thefirst voltage interval is in the range of 1.3 V to 4.5 V.

878. Control circuit according to item 876 or 877, characterized in thatthe second voltage interval is in the range of 4.0 V to 10.0 V.

879. Method for adjusting a brightness of at least one μ-LED which isconnected to a current driver element having a control terminal, thefirst terminal of which is connected to a first potential and in which acapacitor is connected between the control terminal and the firstpotential so that it forms a capacitive voltage divider with a definedcapacitance between the control terminal and the first terminal,comprising the steps

-   -   applying a control signal to the control terminal during a first        period of time, thereby adjusting a current flowing through the        at least one μ-LED during the first period of time; and    -   switching off the control signal during a second time period        following the first time period, whereby the current flowing        through the μ-LED is adjusted by a reduced control signal formed        by the control signal during the first time period and the        capacitive voltage divider.

880. Method according to item 879, in which the reduced control signalapplied to the control terminal during the second time period isobtained from the control signal during the first time period by theratio of a capacity of the capacitor and the sum of the capacity of thecapacitor and the defined capacity.

881. Method based on one of the preceding articles, in which a ratio ofthe second period to the first period is in the range 300:1 to 100:1, inparticular in the range 100:1.

882. Method according to any of the preceding items, in which the μ-LEDis operated at a first, darker brightness level if a voltage of thefirst control signal is within a first voltage interval, and the μ-LEDis operated at at least a second, brighter brightness level if a voltageof the second control signal is within a second voltage interval whichis at least partially above the first voltage interval.

883. Method according to any of the preceding items, in which thecontrol signal is derived from a digital control word having a number nof bits, the n bits corresponding to the second control signal and theleast significant m bits corresponding to the first control signal.

884. Use of a control circuit according to any of the preceding itemsfor driving a μ-LED, μ-LED array or μ-LED module according to any of thepreceding items. O

885. Supply circuit, comprising:

-   -   an error correction detector having a reference signal input, an        error signal input and a correction signal output;    -   a controllable current source with current output and a control        signal terminal, the control signal terminal being connected to        the correction signal output to form a control loop for the        controllable current source, the current source configured to        provide a current at the current output in dependence on a        signal at the control signal terminal;    -   a substitute source with one output configured to provide a        substitute signal;    -   a switching device which is configured to supply, depending on a        switching signal, either a signal derived from the current at        the current output or the substitute signal to the error signal        input with additional disconnection of the current output of the        current source

886. Supply circuit according to item 885, in which the substitutesignal is substantially the same as the signal derived from the currentsignal.

887. Supply circuit according to any of the preceding items, in whichthe variable current source comprises a current mirror having aswitchable output branch connected to the current output.

888. Supply circuit according to item 887, in which the output branchcomprises an output transistor whose control terminal is connected viathe switching device to a fixed potential for opening the transistor independence on a switching signal.

889. Supply circuit according to any of the preceding items, in whichthe adjustable current source comprises an input branch to which areference current can be supplied and which has a node which isconnected to the reference signal input of the error correctiondetector.

890. Supply circuit according to any of the preceding items, in whichthe controllable current source comprises a current mirror, the controlsignal terminal being connected to the control terminal of an outputtransistor of the current mirror.

891. Supply circuit according to any of the preceding items, in whichthe error correction detector comprises a differential amplifier, thetwo branches of which are connected together to a supply potential via acurrent mirror.

892. Supply circuit according to item 891, in which the two branches ofthe differential amplifier each comprise an input transistor, which havedifferent geometric parameters.

893. Supply circuit according to any of the preceding items, in whichthe replacement source comprises an element coupled to the output forgenerating a voltage so that the replacement signal is substantiallyequal to the signal derived from the current signal.

894. Supply circuit according to any of the preceding items, in whichthe replacement source comprises a series connection of acurrent-generating element and a voltage-generating element, the outputbeing disposed between the two elements.

895. Supply circuit according to any of the preceding items, in whichthe replacement source comprises a transistor whose control terminal isconnected to the control terminal of the current mirror transistor ofthe current source.

896. Supply circuit according to any of the preceding items, in whichthe switching device comprises one or more transmission gates.

897. Supply circuit according to any of the preceding items, comprisinga reference current mirror configured to supply a current defined on theinput side to the error correction detector and to the current source onthe output side.

898. Method for powering a μ-LED comprising:

-   -   detecting of a supply current by the μ-LED;    -   comparing the supply current with a reference signal and        deriving a correction signal from the comparison;    -   changing the supply current in response to the correction signal        to control the supply current to a setpoint;    -   switching off a supply current through the μ-LED and        simultaneous supply of a substitute signal for the comparison        step.

899. Method according to item 898, in which the substitute signal issubstantially equivalent to a supply current through the μ-LED or asignal derived therefrom.

900. Use of a supply circuit according to any of the preceding items forsupplying a μ-LED or μ-LED device, in particular according to any of thepreceding items, which is operated by a signal which pulse-widthmodulates the power supply.

901. Arrangement with

-   -   the supply circuit implemented in a substrate according to any        of the preceding items; and    -   a μ-display according to any of the preceding items or        comprising a matrix of pixels arranged in rows and columns and        having at least one μ-Led or μ-LED array according to any of the        preceding items.

902. Display matrix control circuit comprising a plurality of lightemitting devices arranged in rows and columns, comprising:

-   -   a row selection input for a row selection signal and a column        data input for a data signal;    -   a ramp signal input for a ramp signal having a level between a        first value and a second value and a trigger input for a trigger        signal;    -   a column data buffer configured to buffer the data signal in        response to the row select signal;    -   a pulse generator coupled to the column data buffer and said        ramp signal input and configured to provide a buffered output        signal to control the on/off ratio of at least one of said        plurality of light emitting devices in response to the trigger        signal, the data signal and the ramp signal.

903. Control circuit according to item 902, wherein the pulse generatorcomprises

-   -   comparator means for comparing the buffered data signal with the        ramp signal; and    -   an output buffer coupled to an output of the comparator device        and the trigger input.

904. Control circuit according to object 903, wherein the output buffercomprises a flip-flop, in particular an RS flip-flop with its inputcoupled to the output of the comparator device and the trigger inputrespectively.

950. Control circuit according to any of items 902 to 904, wherein thecolumn data buffer comprises a capacitor for storing the data signal anda switch disposed between the capacitor and the column data input.

906. Control circuit according to any one of items 902 to 905, thecomparator device comprising a power control input coupled to thetrigger input to adjust its power consumption based on the triggersignal.

907. Control circuit according to any one of items 902 to 906, whereinthe comparator device is coupled to the output buffer to control itspower consumption based on an output state of the output buffer.

908. Control circuit according to one of the items 902 to 907, whereinthe comparator is coupled with its inverting input to the data columnbuffer and with its non-inverting input to the ramp signal input.

909. Control circuit according to any of the items 902 to 907, furthercomprising:

-   -   a ramp generator for supplying the ramp signal to the ramp        signal input, the ramp generator being configured to generate a        signal varying between an initial value and a final value in        response to the trigger signal.

910. Method of controlling the illuminance of a light emitting device ina matrix display having a plurality of light emitting devices arrangedin addressable rows and columns, the method comprising

-   -   providing a data signal for a selected row and at least one        light emitting device;    -   supplying a trigger signal;    -   converting a level of the data signal to a pulse with respect to        a trigger signal; and    -   controlling the on/off ratio of the light emitting device with        the pulse.

911. Method according to item 910, wherein the step of converting alevel of the data signal comprises:

-   -   generating a ramp signal between a first value and a second        value;    -   comparing the data signal with the ramp signal to generate a        comparison signal;    -   generating of a pulse based on the trigger signal and a change        in the comparison signal.

912 Method according to item 910, wherein the generation of a pulsecomprises setting a level of an output signal to a first value inresponse to a trigger signal and resetting the level of the outputsignal to a second value in response to the change in the comparisonsignal.

913. Method according to items 911 or 912, where the ramp signal isgenerated in response to the trigger signal.

914. Method according to any of the items 910 to 913, wherein deliveryof a data signal comprises pre-buffering the data signal, in particularpre-buffering the data signal in a memory device.

915. Use of the control circuit according to any of the preceding itemsin a μ-display or for driving a μ-LED, μ-LED array or an array ofμ-LEDS, in particular according to any of the items 94 to 111 or 7 to 50and 484 to 536.

916. Device for electronically driving a plurality of μ-LEDs, comprising

-   -   a first and at least one second branch each having a μ-LED        connected therein and an electronic fuse arranged in series with        the μ-LED, the first and the at least one second branch being        connected to a potential terminal on one side;    -   a driver circuit having a data signal input, a selection signal        input and a driver output connected to the other side of the        first and at least one second branch;    -   an imprinting component associated with the at least one second        branch, which is designed to generate a current flow triggering        the electronic fuse arranged in series.

917. Device according to item 916, in which

-   -   the μ-LED is configured according to any of the subsequent or        preceding items; and/or    -   the μ-LED comprises a light-shaping or light-guiding element on        its surface according to any of the subsequent or preceding        items; and/or    -   the μ-LED of each branch comprises a common electrically        conductive, in particular transparent, contact layer

918. Device according to any of the preceding items, characterised inthat

the imprinting component comprises an imprinting transistor, which iselectrically connected with its current line contacts in parallel withthe μ-LED to which the imprinting transistor is assigned and whosecontrol contact is connected to an imprinting signal line.

919. Device according to any of the preceding items, characterised inthat

the imprinting component comprises an imprinting diode having oneterminal connected to a second terminal of the μ-LED with which theimprinting diode is associated and the other terminal of which isconnected to an imprinting signal line.

920. Device according to any of the preceding items, characterised inthat

first terminals of the μ-LED are connected to a reference potentialterminal;

a first transistor with its current conduction contacts is arrangedbetween a common terminal of the fuses of the μ-LED and a supplypotential terminal;

a charge storage device is electrically connected to a control contactof the first transistor and to a first current conduction contact of thefirst transistor.

921. Device according to any of the preceding items, characterised inthat second terminals of the μ-LED are connected to a supply potentialterminal;

a first current conducting contact of a first transistor is connected toa reference potential terminal and a second current conducting contactof the first transistor is connected to a common terminal of theelectrical fuses;

a capacitor is connected to a control contact of the first transistorand to the first current conduction contact of the first transistor.

922. Device according to any of the preceding items, characterised inthat second terminals of the μ-LED are connected to the fuse assigned tothe μ-LED;

a first current conducting contact of a first transistor is connected toa reference potential terminal and a second current conducting contactof the first transistor is connected to first terminals of the μ-LED;

a capacitor is connected to a control contact of the first transistorand to the first current conduction contact of the first transistor.

923. Device according to any of the preceding items, characterised inthat first terminals of the μ-LED are connected to a reference potentialterminal;

a first transistor with its current line contacts is arranged between acommon terminal of the fuses of the μ-LED and a supply potentialterminal;

the charge storage device is electrically connected to a control contactof the first transistor and to a second current conduction contact ofthe first transistor.

924. Device according to any of the preceding items, characterised inthat first terminals of the μ-LED are connected to a first referencepotential terminal;

a first transistor with its current conduction contacts is arrangedbetween a common terminal of the fuses of the μ-LEDs and a supplypotential terminal;

a capacitor is electrically connected to a control contact of the firsttransistor and to a second current conduction contact of the firsttransistor, a first terminal of the imprinting diode being connected toa second terminal of the μ-LED and a second terminal of the imprintingdiode being connected to the imprinting signal line.

925. Device according to any of the preceding items, characterised inthat first terminals of the μ-LEDs are connected to a referencepotential terminal;

a first transistor with its current line contacts is arranged between acommon terminal of the fuses of the μ-LEDs and a supply potentialterminal;

a capacitor is electrically connected to a control contact of the firsttransistor and to a second current conduction contact of the firsttransistor, a second terminal of the imprinting diode being connected tothe second terminal of the μ-LED and a first terminal of the imprintingdiode being connected to the imprinting signal line.

926. Device current line contact, characterised in that the drivercircuit comprises the first transistor, a second transistor and thecharge storage, the selection signal line being applied to a controlcontact of the second transistor and the data signal input being appliedto a current conduction contact of the second transistor, and a first ora second current conduction contact of the first transistor providingthe driver output which is connected to the μ-LEDs of the first branchand a second branch to provide a power supply.

927. μ-display or μ-display module comprising a plurality of the devicesaccording to any of the preceding items, in which pixel cells of theμ-display are each electrically connected along a row and/or along acolumn on a common imprinting signal line, and each pixel cell of acolumn is electrically connected to the supply potential terminal bymeans of a common supply line to a switching transistor arranged on acommon carrier outside the μ-display.

928. μ-display or μ-display module according to item 927, in which theμ-LEDs connected in the first and at least one second branch at leastcomprise

-   -   features according to any of the preceding items, in particular        items 94 to 111 or 7 to 50;    -   features according to any of the items 484 to 536;    -   a photonic structure according to any of items 607 to 679.

929. Method for electronically configuring a plurality of μ-LEDsaccording to any of the preceding items articles, comprising the stepsof:

-   -   testing a function of the μ-LED of the first and second branch;    -   if there is no error in the μ-LED in the first and second        branch:    -   applying of an imprinting signal to the electronic imprinting        component;    -   imprinting into the second branch a current flow which triggers        the fuse connected in series to the μ-LED of the second branch.

930. Use of a device according to any of the preceding items in adisplay arrangement according to any of the preceding or subsequentitems.

931. Display arrangement comprising

an IC substrate component with monolithic integrated circuits and withIC substrate contacts arranged as a matrix; and

a monolithic pixelated optochip comprising a semiconductor layersequence with a first semiconductor layer having a first doping and asecond semiconductor layer having a second doping, wherein the polarityof the charge carriers in the first semiconductor layer differs fromthat of the second semiconductor layer and the semiconductor layersequence defines a stacking direction; and

wherein μ-LEDs arranged as a matrix are present in the monolithicpixelated optochip; and

wherein each μ-LED has a μ-LED rear side facing the IC substratecomponent and a first light source contact which adjoins the firstsemiconductor layer in a contacting manner and is electricallyconductively connected to a respective one of the IC substrate contacts;

characterised in that

the projection area of the first light source contact on the μ-LED rearsurface is at most half the area of the μ-LED rear surface; and

the first light source contact in a lateral direction perpendicular tothe stacking direction is surrounded by an absorber on the rear side.

932. Display arrangement according to item 931, characterized in thatthe first semiconductor layer and the second semiconductor layercomprise a p- or n-conductivity lower than 104 Sm⁻¹, preferably lowerthan 3*103 Sm⁻¹, more preferably lower than 103 Sm⁻¹.

933. display arrangement according to any of the preceding items,characterized in that the layer thickness of the first semiconductorlayer in the stacking direction is at most ten times and preferably atmost five times the maximum diagonal of the first light source contactin the lateral direction.

934. Display arrangement according to any of the preceding items,characterized in that the pixel size of the μ-LED is <10 μm andpreferably <5 μm and particularly preferably <2 μm.

935. Display arrangement according to one of the preceding items,characterized in that the projection area of the first light sourcecontact on the μ-LED back is at most 25% and preferably at most 10% ofthe area of the μ-LED back.

936. Display arrangement according to any of the preceding items,characterized in that the rear absorber extends in the stackingdirection in the semiconductor layer sequence.

937. Display arrangement according to any of the preceding items,characterized in that a second light source contact made of atransparent material is arranged in the stacking direction above thesecond semiconductor layer for each μ-LED, which is electricallyconductively connected to a transparent contact layer on the front sideof the monolithic pixelated optochip.

938. Display arrangement according to item 937, characterized in thatthe second light source contact is formed by the transparent contactlayer itself.

939. display arrangement according to any of the preceding items,characterized in that the second light source contact is adjacent to thetransparent contact layer and the second light source contact ofadjacent μ-LEDs are separated from each other by an absorber on thefront side in a lateral direction perpendicular to the stackingdirection.

940. Display arrangement according to any of the preceding items,characterized in that the front absorber extends against the stackingdirection up to and preferably into the second semiconductor layer.

941. Display arrangement according to any of the preceding items,characterized in that, with respect to the stacking direction, anoptochip contact element whose cross-sectional area is larger than thatof the first light source contact is adjacent below the first lightsource contact.

942. Display arrangement according to any of the preceding items,further comprising:

a light-shaping structure, in particular a microlens or a photoniccrystal, which is arranged on the monolithic pixelated optochip anddirects light emitted by the monolithic pixelated Optochip.

943. Display arrangement according to any of the preceding items,further comprising a light-converting element on the surface of themonolithic pixelated Optochip.

944. Display arrangement according to any of the preceding items,wherein, in the case of two adjacent μ-LEDs, one μ-LED is configured asa redundant element to the other μ-LED, to which a fuse element in theIC substrate component is assigned, which fuse element is designed toreplace the other μ-LED by the redundant element if the other μ-LEDfails or to disconnect the redundant element from a power supply if theother μ-LED is functional.

945. Method of manufacturing a display device,

wherein an IC substrate component with monolithic integrated circuitsand with IC substrate contacts arranged as a matrix and a monolithicpixelated optochip are electrically conductively connected; and

a semiconductor layer sequence with a first semiconductor layer having afirst doping and a second semiconductor layer having a second doping isgrown in the monolithic pixelated optochip, the polarity of the chargecarriers in the first semiconductor layer differing from that of thesecond semiconductor layer and the half-conductor layer sequencedefining a stacking direction; and

wherein μ-LEDs arranged in the monolithic pixelated optochip as a matrixare applied, each μ-LED comprising a μ-LED rear side facing the ICsubstrate component and a first light source contact which adjoins thefirst semiconductor layer in a contacting manner and is electricallyconductively connected to a respective one of the IC substrate contacts;

characterised in that

the first light source contact is applied with a size such that itsprojection area perpendicular to the stacking direction occupies at mosthalf the area of the μ-LED backside; and

the first light source contact in a lateral direction perpendicular tothe stacking direction is surrounded by an absorber on the rear side.

946. Display arrangement with a μ-display comprising a plurality ofpixels arranged in rows and columns, comprising:

-   -   a first substrate structure with μ-LEDs arranged therein or        applied thereto, the edge length of which is less than 50 μm, in        particular less than 20 μm, and which form the pixel structure        arranged in rows and columns, wherein the μ-LEDs are        individually controllable; and a plurality of contacts are        arranged on the surface of the first substrate structure        opposite to a light emission direction;    -   a second substrate structure comprising on a surface a plurality        of contacts corresponding to the contacts of the first substrate        structure and having a plurality of digital circuits for        addressing the μ-LEDs;

wherein the first and second substrate structures are connected togetherand the plurality of contacts are electrically connected to thecorresponding contacts, and wherein the first substrate structure isformed with a first material system and the second substrate structureis formed with a second material system different therefrom.

947. Display arrangement according to item 946, in which at least somecontacts of the plurality of contacts have an edge length of less than10 μm or an area of less than 20 μm².

948. Display arrangement according to any of the preceding items, inwhich the μ-LEDs are formed with an edge length of less than 10 μmand/or have a distance to adjacent μ-LED of less than 7 μm.

949. Display arrangement according to any of the preceding items,comprising an adhesive or other form-fitting element partially disposedbetween and holding together the first and second substrate structures

950. Display arrangement according to any of the preceding items,wherein the μ-display comprises a plurality of pixels arranged in rowsand columns, at least some of the μ-LEDs or μ-LED arrays oroptoelectronic devices according to any of the preceding items, orelements according to any of the preceding items.

951. Display arrangement according to any of the preceding items, inwhich the second substrate structure comprises at least some of thecircuitry according to any of the preceding items.

952. Display arrangement according to any of the preceding items,further comprising at least one light guiding arrangement havingfeatures according to any of the preceding items.

953. Display arrangement according to any of the preceding items, inwhich the first substrate structure is separated from the secondsubstrate structure by an intermediate structure through which at leastcontact lines extend which connect the contacts of the first substratestructure with contacts of the second substrate structure.

954. Display arrangement according to any of the preceding items, inwhich the first system of materials comprises at least one of thefollowing compounds GaN, GaP, GaInP, InAlP, GaAlP or GaAlInP, GaAs,AlGaAs, and the second material system comprises at least one of thefollowing material systems: monocrystalline, polycrystalline, amorphoussilicon, indium-gallium-zinc oxide, GaN or GaAs.

955. Display arrangement according to any of the preceding items, inwhich in the first carrier structure comprises a plurality of switchablecurrent sources, each of which is connected to a pixel for the supplythereof, and whose switch inputs are coupled to the contacts forsupplying switching signals from the digital circuits.

956. Display arrangement according to item 955, in which the switchablecurrent sources are arranged in a material system, which is differentfrom the material system used for the μ-LEDs or from the first materialsystem.

957. Display arrangement according to any of the preceding items, inwhich the plurality of digital circuits of the second substratestructure are adapted to generate a PWM-like signal from a clock signaland a data word for each pixel.

958. Display arrangement according to item 957, in which the pluralityof digital circuits comprises a number of serially connected shiftregisters, the respective length of which corresponds to the data wordfor one pixel, each shift register being connected to a buffer forintermediate storage.

959. Display arrangement according to any of the preceding items,wherein the plurality of digital circuits comprise a multiplexerelectrically coupled to a demultiplexer in the first substrate structurefor driving multiple optoelectronic devices.

The description with the help of the exemplary embodiments does notlimit the various embodiments shown in the examples to these. Rather,the disclosure depicts several aspects, which can be combined with eachother and also with each other. Aspects that relate to processes, forexample, can thus also be combined with aspects where light extractionis the main focus. This is also made clear by the various objects shownabove.

The invention thus comprises any features and also any combination offeatures, including in particular any combination of features in thesubject-matter and claims, even if that feature or combination is notexplicitly specified in the exemplary embodiments.

1. A display arrangement with a μ-display comprising a plurality ofpixels arranged in rows and columns, comprising: a first substratestructure with μ-LEDs arranged therein or applied thereto, the edgelength of which is less than 50 μm, in particular less than 20 μm, andwhich form a pixel structure arranged in rows and columns, wherein theμ-LEDs are individually controllable, and a plurality of contacts arearranged on a surface of the first substrate structure opposite to alight emission direction; a second substrate structure comprising on asurface a plurality of contacts corresponding to the contacts of thefirst substrate structure and having a plurality of digital circuits foraddressing the μ-LEDs; wherein the first and second substrate structuresare connected together and the plurality of contacts are electricallyconnected to the corresponding contacts; and wherein the first substratestructure is formed with a first material system and the secondsubstrate structure is formed with a second material system differenttherefrom.
 2. The display arrangement according to claim 1, wherein atleast some contacts of the plurality of contacts have an edge length ofless than 10 μm or an area of less than 20 μm².
 3. The displayarrangement according to claim 1, wherein the μ-LEDs are formed with anedge length of less than 10 μm and/or have a distance to an adjacentμ-LED of less than 7 μm.
 4. The display arrangement according to claim1, further comprising an adhesive or a form-fitting element partiallydisposed between and holding together the first and second substratestructures.
 5. The display arrangement according to claim 1, wherein thefirst substrate structure is separated from the second substratestructure by an intermediate structure through which at least contactlines extend which connect the contacts of the first substrate structurewith the contacts of the second substrate structure.
 6. The displayarrangement according to claim 1, wherein the first material systemcomprises at least one of the following compounds: GaN, GaP, GaInP,InAlP, GaAlP, GaAlInP, GaAs, or AlGaAs; and wherein the second materialsystem comprises at least one of the following material systems:monocrystalline, polycrystalline, amorphous silicon, indium-gallium-zincoxide, GaN, or GaAs.
 7. The display arrangement according to claim 1,wherein the first carrier structure comprises a plurality of switchablecurrent sources, each of which is connected to a pixel for the supplythereof, and whose switch inputs are coupled to the contacts forsupplying switching signals from the digital circuits.
 8. The displayarrangement according to claim 7, wherein the switchable current sourcesare arranged in a material system which is different from a materialsystem used for the μ-LEDs or from the first material system.
 9. Thedisplay arrangement according to claim 1, wherein the plurality ofdigital circuits of the second substrate structure are adapted togenerate a PWM-like signal from a clock signal and a data word for eachpixel.
 10. The display arrangement according to claim 9, wherein theplurality of digital circuits comprises a number of serially connectedshift registers, a respective length of which corresponds to the dataword for one pixel, each shift register being connected to a buffer forintermediate storage; and/or wherein the plurality of digital circuitscomprise a multiplexer electrically coupled to a demultiplexer in thefirst substrate structure for driving multiple optoelectronic devices.11. A driver circuit configured for driving a plurality ofoptoelectronic elements, comprising: a plurality of first memory cells,each comprising a set input, a reset input, and an output; wherein eachfirst memory cell at said output is triggered to a first state by a setsignal at said set input and maintains said first state until reset to asecond state at said reset input; and wherein the output of each firstmemory cell is configured to control a respective one of saidoptoelectronic elements.
 12. The driver circuit according to claim 11,wherein each first memory cell provides a pulse width modulation (“PWM”)signal at the output, and the PWM signal controls a switch configured toswitch a current through the respective optoelectronic element on andoff.
 13. The driver circuit according to claim 11, wherein each firstmemory cell comprises two cross-coupled NOR gates or two cross-coupledNAND gates.
 14. The driver circuit according to claim 11, wherein eachfirst memory cell comprises an NMOS transistor and a PMOS transistorconnected in series, and an inverter having an input connected betweenthe NMOS transistor and the PMOS transistor and an output connected togates of the NMOS and PMOS transistors.
 15. The driver circuit accordingto claim 11, further comprising a plurality of counters each configuredto activate a set signal when a data value is loaded into a respectivecounter and to activate a reset signal when the respective counterreaches the data value.
 16. The driver circuit according to claim 11,further comprising a common counter configured to generate a commondimming signal for the plurality of optoelectronic elements.
 17. Thedriver circuit according to claim 11, further comprising a plurality ofsecond memory cells, each second memory cell being coupled to arespective one of the first memory cells and configured to override anoutput signal of the respective first memory cell as necessary to leavethe respective optoelectronic element turned off.
 18. An optoelectronicdevice comprising: a plurality of optoelectronic elements, in particularμ-LEDs or μ-LED; and the driving circuit according to claim 11 fordriving the plurality of optoelectronic elements.
 19. A method ofoperating the optoelectronic device according to claim 18, comprisingthe following steps performed in the specified order during a frame:switching off all optoelectronic elements; controlling theoptoelectronic elements that darken during framing by the second memorycells; and controlling the current through the optoelectronic elementsby the first memory cells.
 20. The method according to claim 19, whereina common dimming of the optoelectronic elements is carried out beforethe current through the optoelectronic elements is controlled by thefirst memory cells.
 21. Arrangement comprising: a plurality of pixelstructure arranged in rows and columns, which comprise a first substratestructure with μ-LEDs, μ-LED arrangements, μ-LED modules orlight-emitting devices arranged therein or applied thereto, the edgelength of which is less than 50 μm, in particular less than 20 μm, andwhich form the pixel structure arranged in rows and columns, wherein theμ-LEDs, μ-LED arrays, μ-LED modules or light emitting devices areindividually controllable; and a plurality of contacts are arranged onthe surface of the first substrate structure opposite to a lightemission direction; a second substrate structure comprising on a surfacea plurality of contacts corresponding to the contacts of the firstsubstrate structure and a plurality of digital circuits for addressingthe optoelectronic components; wherein the first and second substratestructures are connected together and the plurality of contacts areelectrically connected to the corresponding contacts, and wherein thefirst substrate structure is formed with a first material system and thesecond substrate structure is formed with a second material system, inparticular different therefrom; and the second substrate structurecomprising: a device for electronically driving a μ-LED pixel cell, inparticular created with NMOS technology, comprising: a data signal line,a threshold line and a selection signal line; wherein contacting thesecond substrate structure to the μ-LED, μ-LED array, μ-LED module orlight emitting device results in it being electrically connected inseries to a dual-gate transistor and together therewith between firstand second potential terminals, the dual-gate transistor being arrangedwith its current conduction contacts between one terminal of the μ-LED,μ-LED array, μ-LED module or light emitting device and a potentialterminal, and a first control gate of the dual-gate transistor beingconnected to the threshold line; and a selection latch circuit with acapacitor coupled to a second control gate of the dual-gate transistorand to a current conduction contact of the dual-gate transistor, andwith a control transistor having its control terminal connected to theselection signal line and/or a supply circuit comprising an errorcorrection detector having a reference signal input, an error signalinput and a correction signal output; a controllable current source withcurrent output and a control signal terminal, the control signalterminal being connected to the correction signal output to form acontrol loop for the controllable current source, the current sourcebeing configured to provide a current at the current output independence on a signal at the control signal terminal; a backup sourcewith an output designed to provide a backup signal; and a switchingdevice which is configured, depending on a switching signal (VPWM), tosupply either a signal derived from the current at the current output orthe substitute signal to the fault signal input with additionaldisconnection of the current output of the current source; and/or adriver circuit for driving a plurality of μ-LEDs, μ-LED arrays, μ-LEDmodules or light emitting devices, comprising a plurality of firstmemory cells, each comprising a set input, a reset input and an outputeach first memory cell at the output is triggered to a first state by aset signal at the set input and holds the first state until it is resetto a second state at the reset input; and the output of each firstmemory cell is configured to drive a respective one of the μ-LEDs, μ-LEDarrays, μ-LED modules or light emitting devices; and/or a controlcircuit for adjusting a brightness of at least one μ-LED, comprising acurrent driving element having a control terminal, the first terminal ofwhich is connected to a first potential; a capacitor connected betweenthe control terminal and the first potential and forming a capacitivevoltage divider with a defined capacitance between the control terminaland the first terminal; a control element adapted to apply a controlsignal to the control terminal during a first time period, on the basisof which a current flowing through the at least one μ-LED is adjustableduring the first time period; wherein during a second time periodsubsequent to the first time period, a current flowing through the μ-LEDis determined by a reduced control signal formed by the control signalduring the first time period and the capacitive voltage divider; and thecontrol element is arranged to provide a first or a second controlsignal during the first time period in order to operate the μ-LED at atleast two different brightness levels; whereby the arrangement isconfigured for: having an IC substrate component with monolithicintegrated circuits and with IC substrate contacts arranged as a matrix;and having a monolithic pixelated optochip comprising a semiconductorlayer sequence with a first semiconductor layer having a first dopingand a second semiconductor layer having a second doping, the polarity ofthe charge carriers in the first semiconductor layer differing from thatof the second semiconductor layer and the semiconductor layer sequencedefining a stacking direction; wherein μ-LEDs arranged as a matrix arepresent in the monolithic pixelated optochip; and wherein each μ-LED hasa μ-LED rear side facing the IC substrate component and a first lightsource contact which adjoins the first semiconductor layer in acontacting manner and is electrically conductively connected to arespective one of the IC substrate contacts; characterized in that theprojection area of the first light source contact on the μ-LED backsideis at most half the area of the μ-LED backside; and the first lightsource contact in a lateral direction perpendicular to the stackingdirection is surrounded by an absorber on the rear side.